Found: 25
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Optimization of high power AlGaInP laser diodes at 626 nm.
- Published in:
- Optical & Quantum Electronics, 2024, v. 56, n. 3, p. 1, doi. 10.1007/s11082-023-06028-5
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- Article
Precise prediction of optical behaviour of mechanically stressed edge emitting GaAs devices.
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- Optical & Quantum Electronics, 2022, v. 54, n. 11, p. 1, doi. 10.1007/s11082-022-04134-4
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- Article
Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 10, p. 640, doi. 10.1049/el.2018.0521
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- Article
Asynchronous sampling terahertz time‐domain spectroscopy using semiconductor lasers.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 9, p. 640, doi. 10.1049/el.2018.0521
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- Article
Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm.
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- Applied Physics B: Lasers & Optics, 2017, v. 123, n. 4, p. 1, doi. 10.1007/s00340-017-6700-4
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- Article
Effect of carrier gas in hydride vapor phase epitaxy on optical and structural properties of GaN.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1180, doi. 10.1002/pssb.201451609
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- Article
Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 1, p. 175, doi. 10.1007/s00340-013-5671-3
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- Article
Hydride Vapor-Phase Epitaxy of c-Plane AlGaN Layers on Patterned Sapphire Substrates.
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- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 814, doi. 10.1007/s11664-013-2871-x
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- Article
High peak power pulses from dispersion optimised modelocked semiconductor laser.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 13, p. 1, doi. 10.1049/el.2013.1447
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- Article
High peak power pulses from dispersion optimised modelocked semiconductor laser.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 12, p. 838, doi. 10.1049/el.2013.1447
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- Article
Development of narrow linewidth, micro-integrated extended cavity diode lasers for quantum optics experiments in space.
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- Applied Physics B: Lasers & Optics, 2013, v. 111, n. 2, p. 255, doi. 10.1007/s00340-012-5327-8
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- Article
Si Doping of GaN in Hydride Vapor-Phase Epitaxy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 820, doi. 10.1007/s11664-012-2373-2
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- Article
Optimization of 780 nm DFB diode lasers for high-power narrow linewidth emission.
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- Applied Physics B: Lasers & Optics, 2012, v. 108, n. 4, p. 767, doi. 10.1007/s00340-012-5131-5
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- Article
Application of 940 nm high-power DFB lasers for line-broadening measurements at normal pressure using a robust and compact setup.
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- Applied Physics B: Lasers & Optics, 2012, v. 106, n. 2, p. 357, doi. 10.1007/s00340-011-4745-3
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- Article
DBR laser diodes emitting near 1064 nm with a narrow intrinsic linewidth of 2 kHz.
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- Applied Physics B: Lasers & Optics, 2011, v. 104, n. 4, p. 813, doi. 10.1007/s00340-011-4644-7
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- Article
Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers.
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- Applied Physics B: Lasers & Optics, 2011, v. 102, n. 1, p. 43, doi. 10.1007/s00340-010-4226-0
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- Article
23W peak power picosecond pulses from a single-stage all-semiconductor master oscillator power amplifier.
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- Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 295, doi. 10.1007/s00340-009-3672-z
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- Article
Experimental determination of the thermal lens parameters in a broad area semiconductor laser amplifier.
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- Applied Physics B: Lasers & Optics, 2009, v. 97, n. 1, p. 95, doi. 10.1007/s00340-009-3591-z
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- Article
XEDS with SDD-Technology in Scanning Transmission Electron Microscopy.
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- Microscopy & Microanalysis, 2009, v. 15, n. S2, p. 202, doi. 10.1017/S1431927609095270
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- Article
Degradation model analysis of laser diodes.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 160, doi. 10.1007/s10854-007-9534-8
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- Article
Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm.
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- Applied Physics B: Lasers & Optics, 2006, v. 85, n. 4, p. 509, doi. 10.1007/s00340-006-2459-8
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- Article
High brightness 735 nm tapered lasers - optimisation of the laser geometry.
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- Optical & Quantum Electronics, 2003, v. 35, n. 4/5, p. 521, doi. 10.1023/A:1022977923922
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- Article
Ultrafast Rabi Oscillations of Free-Carrier Transitions in InP.
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- Physica Status Solidi (B), 1997, v. 204, n. 1, p. 20, doi. 10.1002/1521-3951(199711)204:1<20::AID-PSSB20>3.0.CO;2-4
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- Article
METAMORPHIC InAIAs/InGaAs HEMTs ON GaAs SUBSTRATES WITH COMPOSITE CHANNELS AND 350-GHz f<sub>max</sub> WITH 160-GHz f<sub>T</sub>.
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- Microwave & Optical Technology Letters, 1996, v. 11, n. 3, p. 145, doi. 10.1002/(SICI)1098-2760(19960220)11:3<145::AID-MOP9>3.0.CO;2-L
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- Article
Carrier cooling in intermixed GaAs/ AlGaAs quantum dots and wires using high excitation and transient spectroscopy.
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- Physica Status Solidi (B), 1995, v. 188, n. 1, p. 241, doi. 10.1002/pssb.2221880121
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- Article