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Epitaxial Growth of III‐Vs on On‐Axis Si: Breaking the Symmetry for Antiphase Domains Control and Burying.
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- Advanced Optical Materials, 2023, v. 11, n. 15, p. 1, doi. 10.1002/adom.202203050
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Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides.
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- Light: Science & Applications, 2023, v. 12, n. 1, p. 1, doi. 10.1038/s41377-023-01185-4
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- Article
Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates.
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- EPJ Photovoltaics, 2023, v. 14, p. 1, doi. 10.1051/epjpv/2022027
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Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates.
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- Translational Psychiatry, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41377-022-00850-4
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Impact of the ridge etching‐depth on GaSb‐based laser diodes.
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- Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 4, p. 162, doi. 10.1049/ell2.12392
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- Article
Crystal Phase Control during Epitaxial Hybridization of III‐V Semiconductors with Silicon.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100777
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- Article
The Interaction of Extended Defects as the Origin of Step Bunching in Epitaxial III–V Layers on Vicinal Si(001) Substrates.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900290
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A Stress‐Free and Textured GaP Template on Silicon for Solar Water Splitting.
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- Advanced Functional Materials, 2018, v. 28, n. 30, p. 1, doi. 10.1002/adfm.201801585
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- Article
Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin.
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- Nanophotonics (21928606), 2018, v. 7, n. 2, p. 507, doi. 10.1515/nanoph-2017-0052
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- Article
Pseudo volume plasmon in arrays of doped and un-doped semiconductors.
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- Applied Physics A: Materials Science & Processing, 2012, v. 109, n. 4, p. 927, doi. 10.1007/s00339-012-7360-1
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- Article
Arrays of doped and un-doped semiconductors for sensor applications.
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- Applied Physics A: Materials Science & Processing, 2012, v. 109, n. 4, p. 943, doi. 10.1007/s00339-012-7361-0
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- Article
MBE growth and interface formation of compound semiconductor heterostructures for optoelectronics.
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- Physica Status Solidi (B), 2007, v. 244, n. 8, p. 2683, doi. 10.1002/pssb.200675623
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- Article