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Applicability of Piezoceramic Components in the Automotive Industry.
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- Russian Engineering Research, 2023, v. 43, n. 10, p. 1273, doi. 10.3103/S1068798X23100313
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- Article
Optimizing Gear Shifts in an Automatic Transmission for Light Commercial Vehicles.
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- Russian Engineering Research, 2023, v. 43, n. 7, p. 877, doi. 10.3103/S1068798X23070365
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- Article
Profile of Molecular Markers of Cardiac Fibrosis in Rats Exposed to Different Doxorubicin Doses.
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- Journal of Evolutionary Biochemistry & Physiology, 2023, v. 59, n. 2, p. 359, doi. 10.1134/S0022093023020059
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- Article
Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.
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- Semiconductors, 2021, v. 55, n. 11, p. 823, doi. 10.1134/S1063782621100080
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High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures.
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- Technical Physics, 2021, v. 66, n. 9, p. 1072, doi. 10.1134/S1063784221070185
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- Article
Study of Hematological Parameters and Morphometric Indices of Erythrocytes in Rats Exposed to Calcium Oxide Nanoparticles.
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- Bulletin of Experimental Biology & Medicine, 2021, v. 170, n. 5, p. 665, doi. 10.1007/s10517-021-05128-0
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Nonclassical Light Sources Based on Selectively Positioned Deterministic Microlens Structures and (111) In(Ga)As Quantum Dots.
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- Semiconductors, 2019, v. 53, n. 10, p. 1304, doi. 10.1134/S1063782619100063
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High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines.
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- Technical Physics Letters, 2019, v. 45, n. 7, p. 739, doi. 10.1134/S1063785019070204
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- Article
The Influence of the InAlAs Layer Surface Morphology on the Temperature Dependence of Parameters of Au/Ti/n-InAlAs(001) Schottky Diodes.
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- Technical Physics Letters, 2019, v. 45, n. 2, p. 180, doi. 10.1134/S106378501902024X
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- Article
Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov - de Haas Oscillation Method.
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- Russian Physics Journal, 2018, v. 61, n. 7, p. 1202, doi. 10.1007/s11182-018-1518-z
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Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots.
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- Semiconductors, 2018, v. 52, n. 11, p. 1437, doi. 10.1134/S1063782618110064
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- Article
Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing.
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- Semiconductors, 2018, v. 52, n. 5, p. 664, doi. 10.1134/S1063782618050354
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- Article
Increasing Saturated Electron-Drift Velocity in Donor-Acceptor Doped pHEMT Heterostructures.
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- Technical Physics Letters, 2018, v. 44, n. 3, p. 260, doi. 10.1134/S1063785018030240
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- Article
Recombination of charge carriers in the GaAs-based p- i- n diode.
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- Semiconductors, 2010, v. 44, n. 10, p. 1362, doi. 10.1134/S1063782610100209
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NONLINEAR TRANSPORT OF 2D ELECTRONS IN MAGNETIC FIELD.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 12/13, p. 2689, doi. 10.1142/S0217979209062190
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- Article
Effect of an in-plane magnetic field on magnetoresistance hysteresis of the two-dimensional electron gas in the integer quantum Hall effect regime.
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- JETP Letters, 2009, v. 89, n. 2, p. 92, doi. 10.1134/S0021364009020106
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Nonequilibrium state of the two-dimensional electron gas in the integer quantum Hall effect regime.
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- JETP Letters, 2009, v. 89, n. 1, p. 46, doi. 10.1134/S002136400901010X
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- Article
Blockade of tunneling in a suspended single-electron transistor.
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- JETP Letters, 2008, v. 87, n. 3, p. 150, doi. 10.1134/S0021364008030077
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- Article
Role of lateral interaction in the homoepitaxy of GaAs on the (001)-β(2 × 4) surface.
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- JETP Letters, 2007, v. 86, n. 7, p. 482, doi. 10.1134/S0021364007190125
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Giant hysteresis of magnetoresistance in the quantum hall effect regime.
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- JETP Letters, 2007, v. 86, n. 4, p. 264, doi. 10.1134/S0021364007160102
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Properties of 2D electron gas in AlGaAs/GaAs heterojunctions with thin AlGaAs layers.
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- Semiconductors, 2007, v. 41, n. 2, p. 180, doi. 10.1134/S1063782607020133
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Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface.
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- JETP Letters, 2006, v. 84, n. 9, p. 505, doi. 10.1134/S0021364006210089
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Giant magnetoresistance oscillations induced by microwave radiation and a zero-resistance state in a 2D electron system with a moderate mobility.
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- JETP Letters, 2006, v. 84, n. 7, p. 391, doi. 10.1134/S0021364006190076
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Light-induced metal-insulator transition in n-GaAs/AlGaAs heterostructure: Acoustic methods of study.
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- Semiconductors, 2006, v. 40, n. 12, p. 1415, doi. 10.1134/S1063782606120086
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Resonant Raman scattering in nanostructures with InGaAs/AlAs quantum dots.
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- JETP Letters, 2006, v. 83, n. 11, p. 505, doi. 10.1134/S0021364006110087
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Exciton-polariton transition induced by elastic exciton-exciton collisions in ultrahigh quality AIGaAs alloys.
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- Semiconductors, 2006, v. 40, n. 5, p. 527, doi. 10.1134/S1063782606050046
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Coulomb blockade and the thermopower of a suspended quantum dot.
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- JETP Letters, 2006, v. 83, n. 3, p. 122, doi. 10.1134/S002136400603009X
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Interface Phonons in Semiconductor Nanostructures with Quantum Dots.
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- Journal of Experimental & Theoretical Physics, 2005, v. 101, n. 3, p. 554, doi. 10.1134/1.2103225
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Temperature Dependence of Aharonov–Bohm Oscillations in Small Quasi-Ballistic Interferometers.
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- JETP Letters, 2005, v. 81, n. 12, p. 625, doi. 10.1134/1.2034592
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- Article
Critical Phenomena in the β-(2×4)→α-(2×4) Reconstruction Transition on the (001) GaAs Surface.
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- JETP Letters, 2005, v. 81, n. 12, p. 629, doi. 10.1134/1.2034593
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Observation of Commensurability Oscillations of Thermopower in an Antidot Lattice.
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- JETP Letters, 2005, v. 81, n. 9, p. 462, doi. 10.1134/1.1984030
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Oscillations of the Magnetoresistance of a Two-Dimensional Electron Gas in a GaAs Quantum Well with AlAs/GaAs Superlattice Barriers in a Microwave Field.
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- JETP Letters, 2005, v. 81, n. 6, p. 284, doi. 10.1134/1.1931016
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- Article
Lateral Photoconductivity of AlGaAs/InGaAs Structures with Quantum Wells and Self-Organized Quantum Dots Under Interband Illumination.
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- Semiconductors, 2005, v. 39, n. 1, p. 103, doi. 10.1134/1.1852656
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THE EFFECT OF THE MICROSCOPIC STATE OF A BALLISTIC RING ON THE AHARONOV-BOHM OSCILLATIONS TEMPERATURE DEPENDENCE.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2004, v. 18, n. 27-29, p. 3505, doi. 10.1142/S0217979204026901
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Aharonov–Bohm Oscillation Amplitude in Small Ballistic Interferometers.
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- JETP Letters, 2004, v. 79, n. 3, p. 136, doi. 10.1134/1.1719130
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Commensurate Oscillations of the Magnetoresistance of a Two-Dimensional Electron Gas in GaAs Quantum Wells with Corrugated Heteroboundaries.
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- JETP Letters, 2003, v. 77, n. 12, p. 662, doi. 10.1134/1.1604416
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Physics and Technology of III–V Heterostructures: Current Status and Trends in the Development.
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- Russian Physics Journal, 2003, v. 46, n. 6, p. 552, doi. 10.1023/B:RUPJ.0000008180.02939.53
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- Article
Millisecond Photoluminescence Kinetics in a System of Direct-Bandgap InAs Quantum Dots in an AlAs Matrix.
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- JETP Letters, 2003, v. 77, n. 7, p. 389, doi. 10.1134/1.1581967
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- Article
The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix.
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- Technical Physics Letters, 2002, v. 28, n. 7, p. 554, doi. 10.1134/1.1498783
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Exciton Recombination in δ-Doped Type-II GaAs/AlAs Superlattices.
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- Semiconductors, 2002, v. 36, n. 4, p. 461, doi. 10.1134/1.1469196
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Anisotropy of Magnetic Transport and Self-Organization of Corrugated Heterointerfaces in Selectively Doped Structures on GaAs(100) Substrates.
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- JETP Letters, 2001, v. 74, n. 3, p. 164, doi. 10.1134/1.1410222
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Magnetotransport Properties of a Ballistic Ring Interferometer on the Basis of a GaAs Quantum Well with a High Concentration of 2D Electron Gas.
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- JETP Letters, 2000, v. 72, n. 4, p. 209, doi. 10.1134/1.1320115
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Thermodynamic and Kinetic Aspects of Reconstruction Transitions at the GaAs(001) Surface.
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- Semiconductors, 2000, v. 34, n. 8, p. 939, doi. 10.1134/1.1188105
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- Article
Nonlinearity of Acoustic Effects and High-Frequency Electrical Conductivity in GaAs/AlGaAs Heterostructures under Conditions of the Integer Quantum Hall Effect.
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- Semiconductors, 2000, v. 34, n. 4, p. 422, doi. 10.1134/1.1188000
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- Article
Oscillation of the Mirror and Fractional RHEED Reflections during Homoepitaxy on the (2×4)-Reconstructed GaAs(001) Surface.
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- Technical Physics Letters, 2000, v. 26, n. 4, p. 307, doi. 10.1134/1.1262826
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Polariton Luminescence in High-Purity Layers of AlGaAs Solid Solutions.
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- JETP Letters, 2000, v. 71, n. 4, p. 148, doi. 10.1134/1.568301
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Quantum Hall effect in a single-mode wire.
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- Semiconductors, 1999, v. 33, n. 11, p. 1238, doi. 10.1134/1.1187856
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Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix.
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- JETP Letters, 1999, v. 70, n. 7, p. 469
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Lasing characteristics of lasers with a vertical cavity based on In[sub 0.2]Ga[sub 0.8]As quantum wells.
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- Technical Physics Letters, 1999, v. 25, n. 10, p. 775, doi. 10.1134/1.1262631
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Interaction of surface acoustic waves with a two-dimensional electron gas in the presence of spin splitting of the Landau bands.
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- Semiconductors, 1999, v. 33, n. 8, p. 892, doi. 10.1134/1.1187626
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- Article