Found: 9
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Zero-dimensionality of a scaled-down VO<sub>2</sub> metal-insulator transition via high-resolution electrostatic gating.
- Published in:
- NPG Asia Materials, 2023, v. 15, n. 1, p. 1, doi. 10.1038/s41427-023-00486-9
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- Article
Observation of the Pinch‐Off Effect during Electrostatically Gating the Metal‐Insulator Transition.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100842
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- Article
Modulation of VO<sub>2</sub> Metal–Insulator Transition by Ferroelectric HfO<sub>2</sub> Gate Insulator.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901356
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- Article
Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack.
- Published in:
- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-15753-4
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- Article
Identifying the Collective Length in VO<sub>2</sub> Metal-Insulator Transitions.
- Published in:
- Small, 2017, v. 13, n. 12, p. n/a, doi. 10.1002/smll.201603113
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- Article
Independent control of phases and defects in TiO<sub>2</sub> thin films for functional transistor channels.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 8, p. 2196, doi. 10.1002/pssa.201600006
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- Article
Positive-bias gate-controlled metal-insulator transition in ultrathin VO<sub>2</sub> channels with TiO<sub>2</sub> gate dielectrics.
- Published in:
- Nature Communications, 2015, v. 6, n. 12, p. 10104, doi. 10.1038/ncomms10104
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- Article
Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact.
- Published in:
- Scientific Reports, 2014, p. 1, doi. 10.1038/srep03713
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- Publication type:
- Article
First principles molecular dynamics simulations for amorphous HfO<sub>2</sub> and Hf<sub>1-x</sub>Si<sub>x</sub>O<sub>2</sub> systems.
- Published in:
- Materials Science (0137-1339), 2005, v. 23, n. 2, p. 401
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- Article