Works matching AU Timoshnev, S.

Results: 24

Electronic Structure of Ultrathin Cs/Bi2Se3 Interfaces.

Published in:

Technical Physics Letters, 2023, v. 49, p. S303, doi. 10.1134/S1063785023010108

By:

Benemanskaya, G. V.;
Timoshnev, S. N.

Publication type:

Article

Effect of Sodium Atom Adsorption on the Electronic Structure of a Gold Film.

Published in:

Technical Physics Letters, 2023, v. 49, p. S259, doi. 10.1134/S1063785023010121

By:

Dementev, P. A.;
Dementeva, E. V.;
Lapushkin, M. N.;
Smirnov, D. A.;
Timoshnev, S. N.

Publication type:

Article

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface.

Published in:

Technical Physics Letters, 2019, v. 45, n. 3, p. 201, doi. 10.1134/S1063785019030039

By:

Benemanskaya, G. V.;
Dement'ev, P. A.;
Kukushkin, S. A.;
Osipov, A. V.;
Timoshnev, S. N.

Publication type:

Article

The Electronic Structure of the Cs/<italic>n</italic>-GaN(0001) Nano-Interface.

Published in:

Technical Physics Letters, 2018, v. 44, n. 3, p. 247, doi. 10.1134/S106378501803015X

By:

Benemanskaya, G. V.;
Lapushkin, M. N.;
Marchenko, D. E.;
Timoshnev, S. N.

Publication type:

Article

Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption.

Published in:

Semiconductors, 2023, v. 57, n. 11, p. 508, doi. 10.1134/S106378262308016X

By:

Timoshnev, S. N.;
Benemanskaya, G. V.;
Mizerov, A. M.;
Sobolev, M. S.;
Enns, Ya. B.

Publication type:

Article

Synchrotron Radiation Photoemission Study of the Electronic Structure of the Ultrathin K/AIN Interface.

Published in:

Semiconductors, 2023, v. 57, n. 10, p. 451, doi. 10.1134/S1063782623090051

By:

Benemanskaya, G. V.;
Timoshnev, S. N.;
Iluridze, G. N.;
Minashvili, T. A.

Publication type:

Article

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.

Published in:

Semiconductors, 2022, v. 56, n. 4, p. 253, doi. 10.1134/S1063782622040030

By:

Seredin, P. V.;
Radam, Ali Obaid;
Goloshchapov, D. L.;
Len'shin, A. S.;
Buylov, N. S.;
Barkov, K. A.;
Nesterov, D. N.;
Mizerov, A. M.;
Timoshnev, S. N.;
Nikitina, E. V.;
Arsentyev, I. N.;
Sharafidinov, Sh.;
Kukushkin, S. A.;
Kasatkin, I. A.

Publication type:

Article

Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation.

Published in:

Semiconductors, 2020, v. 54, n. 14, p. 1847, doi. 10.1134/S1063782620140183

By:

Lubyankina, E. A.;
Toporov, V. V.;
Mizerov, A. M.;
Timoshnev, S. N.;
Shubina, K. Yu.;
Bairamov, B. H.;
Bouravleuv, A. D.

Publication type:

Article

Electronic Structure of Molybdenum Oxide Oxidized at Different Pressures.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1698, doi. 10.1134/S1063782620120040

By:

Dementev, P. A.;
Ivanova, E. V.;
Lapushkin, M. N.;
Smirnov, D. A.;
Timoshnev, S. N.

Publication type:

Article

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.

Published in:

Semiconductors, 2020, v. 54, n. 5, p. 596, doi. 10.1134/S1063782620050115

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Khudyakov, Yu. Yu.;
Mizerov, A. M.;
Timoshnev, S. N.;
Arsentyev, I. N.;
Beltyukov, A. N.;
Leiste, Harald;
Kukushkin, S. A.

Publication type:

Article

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Mizerov, A. M.;
Timoshnev, S. N.;
Nikitina, E. V.;
Arsentiev, I. N.;
Kukushkin, S. A.

Publication type:

Article

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1935, doi. 10.1134/S1063782619140239

By:

Timoshnev, S. N.;
Mizerov, A. M.;
Lapushkin, M. N.;
Kukushkin, S. A.;
Bouravleuv, A. D.

Publication type:

Article

On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1187, doi. 10.1134/S1063782619090112

By:

Mizerov, A. M.;
Timoshnev, S. N.;
Nikitina, E. V.;
Sobolev, M. S.;
Shubin, K. Yu.;
Berezovskaia, T. N.;
Mokhov, D. V.;
Lundin, W. V.;
Nikolaev, A. E.;
Bouravleuv, A. D.

Publication type:

Article

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers.

Published in:

Semiconductors, 2019, v. 53, n. 2, p. 180, doi. 10.1134/S1063782619020143

By:

Kukushkin, S. A.;
Mizerov, A. M.;
Grashchenko, A. S.;
Osipov, A. V.;
Nikitina, E. V.;
Timoshnev, S. N.;
Bouravlev, A. D.;
Sobolev, M. S.

Publication type:

Article

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327

By:

Sobolev, M. S.;
Lazarenko, A. A.;
Mizerov, A. M.;
Nikitina, E. V.;
Pirogov, E. V.;
Timoshnev, S. N.;
Bouravleuv, A. D.

Publication type:

Article

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 12, p. 1529, doi. 10.1134/S1063782618120175

By:

Mizerov, A. M.;
Timoshnev, S. N.;
Sobolev, M. S.;
Nikitina, E. V.;
Shubina, K. Yu.;
Berezovskaia, T. N.;
Shtrom, I. V.;
Bouravleuv, A. D.

Publication type:

Article

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 660, doi. 10.1134/S1063782618050342

By:

Timoshnev, S. N.;
Mizerov, A. M.;
Sobolev, M. S.;
Nikitina, E. V.

Publication type:

Article

Induced surface states of the ultrathin Ba/3 C-SiC(111) interface.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 457, doi. 10.1134/S1063782616040072

By:

Benemanskaya, G.;
Dementev, P.;
Kukushkin, S.;
Lapushkin, M.;
Senkovskiy, B.;
Timoshnev, S.

Publication type:

Article

Electronic structure of a Ba/ n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas.

Published in:

JETP Letters, 2010, v. 91, n. 12, p. 670, doi. 10.1134/S0021364010120118

By:

Benemanskaya, G. V.;
Zhmerik, V. N.;
Lapushkin, M. N.;
Timoshnev, S. N.

Publication type:

Article

Self-organization of nanostructures on the n-GaN(0001) surface in the Cs and Ba adsorption.

Published in:

JETP Letters, 2008, v. 87, n. 2, p. 111, doi. 10.1134/S0021364008020100

By:

Benemanskaya, G. V.;
Vikhnin, V. S.;
Timoshnev, S. N.

Publication type:

Article

Investigations of Nanoscale Columnar Al x Ga 1-x N/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface.

Published in:

Photonics, 2023, v. 10, n. 11, p. 1209, doi. 10.3390/photonics10111209

By:

Seredin, Pavel Vladimirovich;
Kurilo, Nikolay;
Goloshchapov, Dmitry L.;
Kashkarov, Vladimir;
Lenshin, Aleksandr S.;
Buylov, Nikita;
Nesterov, Dmitry;
Mizerov, Andrey;
Kukushkin, Sergey A.;
Timoshnev, S.;
Shubina, K. Yu.;
Sobolev, M. S.

Publication type:

Article

Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/ n-GaN and Ba/ n-AlGaN interfaces.

Published in:

Journal of Experimental & Theoretical Physics, 2014, v. 118, n. 4, p. 600, doi. 10.1134/S1063776114040098

By:

Benemanskaya, G.;
Timoshnev, S.;
Ivanov, S.;
Frank-Kamenetskaya, G.;
Marchenko, D.;
Iluridze, G.

Publication type:

Article

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers.

Published in:

Technical Physics Letters, 2017, v. 43, n. 10, p. 909, doi. 10.1134/S1063785017100091

By:

Mokhov, D.;
Berezovskaya, T.;
Kuzmenkov, A.;
Maleev, N.;
Timoshnev, S.;
Ustinov, V.

Publication type:

Article

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface.

Published in:

Technical Physics Letters, 2016, v. 42, n. 12, p. 1145, doi. 10.1134/S1063785016120026

By:

Benemanskaya, G.;
Dementev, P.;
Kukushkin, S.;
Lapushkin, M.;
Osipov, A.;
Timoshnev, S.

Publication type:

Article

Works matching AU Timoshnev, S.

Electronic Structure of Ultrathin Cs/Bi<sub>2</sub>Se<sub>3</sub> Interfaces.

Effect of Sodium Atom Adsorption on the Electronic Structure of a Gold Film.

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface.

The Electronic Structure of the Cs/<italic>n</italic>-GaN(0001) Nano-Interface.

Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption.

Synchrotron Radiation Photoemission Study of the Electronic Structure of the Ultrathin K/AIN Interface.

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon.

Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation.

Electronic Structure of Molybdenum Oxide Oxidized at Different Pressures.

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates.

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.

On the Specific Features of the Plasma-Assisted MBE Synthesis of n<sup>+</sup>-GaN Layers on GaN/c-Al<sub>2</sub>O<sub>3</sub> Templates.

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers.

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.

Induced surface states of the ultrathin Ba/3 C-SiC(111) interface.

Electronic structure of a Ba/ n-AlGaN(0001) interface and the formation of a degenerate 2D electron gas.

Self-organization of nanostructures on the n-GaN(0001) surface in the Cs and Ba adsorption.

Investigations of Nanoscale Columnar Al x Ga 1-x N/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface.

Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/ n-GaN and Ba/ n-AlGaN interfaces.

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers.

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface.