Found: 14
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Direct Experimental Observation of the Positronium Atom in Porous Silicon by Positron Annihilation Spectroscopy.
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- JETP Letters, 2005, v. 81, n. 11, p. 548, doi. 10.1134/1.2029941
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- Publication type:
- Article
Detection of Parametric X-ray Radiation from Moderately Relativistic Protons in Crystals.
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- JETP Letters, 2005, v. 81, n. 6, p. 241, doi. 10.1134/1.1931007
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- Publication type:
- Article
Positron states and nanoobjects in proton-irradiated quartz single crystals: Positronium atom in quartz.
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- Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 4, p. 625, doi. 10.1134/S1063776108040018
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- Article
Investigation of the Crystallization Kinetics in Ge-Sb-Te-Bi Thin Films for Phase Change Memory Application.
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- 2016
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- Publication type:
- Conference Paper
Positronics and nanotechnologies: Possibilities of studying nanoobjects in materials and nanomaterials by the method of positron-annihilation spectroscopy.
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- Physics of Atomic Nuclei, 2009, v. 72, n. 10, p. 1672, doi. 10.1134/S1063778809100081
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- Article
NANOHETEROMORPHOUS STRUCTURE AND RELAXATION OF GLASSFORMING As<sub>2</sub>S<sub>3</sub>.
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- Chalcogenide Letters, 2013, v. 10, n. 11, p. 473
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- Article
Generation of gigawatt 10-GHz pulses with stable phase.
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- Technical Physics Letters, 2008, v. 34, n. 10, p. 822, doi. 10.1134/S1063785008100039
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- Article
Possible properties of positron states in physics and chemistry of a surface and in semiconductor nanotechnologies.
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- International Journal of Quantum Chemistry, 2007, v. 107, n. 14, p. 2844, doi. 10.1002/qua.21465
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- Article
A NEW METHOD FOR SYNTHESIS OF EPITAXIAL FILMS OF SILICON CARBIDE ON SAPPHIRE SUBSTRATES (α-Al<sub>2</sub>O<sub>3</sub>).
- Published in:
- Reviews on Advanced Materials Science, 2018, v. 57, n. 1, p. 82, doi. 10.1515/rams-2018-0050
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- Article
IR spectroscopic study of hydrogenated silicon layers.
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- Inorganic Materials, 2010, v. 46, n. 3, p. 217, doi. 10.1134/S0020168510030015
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- Article
A nanosecond SOS generator with a peak power of 4 GW.
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- Instruments & Experimental Techniques, 2006, v. 49, n. 4, p. 516, doi. 10.1134/S0020441206040129
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- Publication type:
- Article
On the feasibility of investigation of some defect and porous systems by means of positron annihilation spectroscopy.
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- High Energy Chemistry, 2008, v. 42, n. 6, p. 478, doi. 10.1134/S0018143908060118
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- Publication type:
- Article
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques.
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- Semiconductors, 2019, v. 53, n. 15, p. 2016, doi. 10.1134/S1063782619150065
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- Publication type:
- Article
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy.
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- Semiconductors, 2017, v. 51, n. 13, p. 1692, doi. 10.1134/S1063782617130127
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- Publication type:
- Article