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Maxwell’s Equations in a Plane Waveguide with Nonhomogeneous Nonlinear Permittivity: Analytical and Numerical Approaches.
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- Journal of Nonlinear Science, 2023, v. 33, n. 6, p. 1, doi. 10.1007/s00332-023-09962-6
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Linearizable and Nonlinearizable Solutions in the Nonlinear Eigenvalue Problem Arising in the Theory of Electrodynamic Waveguides Filled with a Nonlinear Medium.
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- Journal of Mathematical Sciences, 2023, v. 275, n. 5, p. 556, doi. 10.1007/s10958-023-06697-3
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- Article
Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate.
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- Technical Physics, 2020, v. 65, n. 10, p. 1668, doi. 10.1134/S1063784220100229
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Electrophysical Characteristics of Multilayer Memristive Nanostructures Based on Yttria-Stabilized Zirconia and Tantalum Oxide.
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- Technical Physics, 2020, v. 65, n. 2, p. 284, doi. 10.1134/S1063784220020231
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Asymptotic Analysis of a Nonlinear Eigenvalue Problem Arising in the Waveguide Theory.
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- Differential Equations, 2019, v. 55, n. 12, p. 1554, doi. 10.1134/S0012266119120036
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Mechanisms of Current Transport and Resistive Switching in Capacitors with Yttria-Stabilized Hafnia Layers.
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- Technical Physics, 2019, v. 64, n. 6, p. 873, doi. 10.1134/S1063784219060227
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Behavioral Features of MIS Memristors with a Si<sub>3</sub>N<sub>4</sub> Nanolayer Fabricated on a Conductive Si Substrate.
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- Semiconductors, 2018, v. 52, n. 12, p. 1540, doi. 10.1134/S1063782618120242
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On the Existence of an Infinite Number of Eigenvalues in One Nonlinear Problem of Waveguide Theory.
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- Computational Mathematics & Mathematical Physics, 2018, v. 58, n. 10, p. 1600, doi. 10.1134/S0965542518100135
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Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters.
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- Semiconductors, 2018, v. 52, n. 4, p. 465, doi. 10.1134/S1063782618040140
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Effect of a modified cover layer on the properties of hydrogen-sensitive Pd/GaAs/InGaAs diode heterostructures with quantum wells.
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- Technical Physics Letters, 2007, v. 33, n. 8, p. 661, doi. 10.1134/S1063785007080111
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Formation of defects in GaAs and Si as a result of Pd deposition onto the surface.
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- Semiconductors, 2006, v. 40, n. 3, p. 314, doi. 10.1134/S1063782606030110
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- Article
Self-Organization of Nanoislands on the Surface of Silicon and Gallium Arsenide Single Crystals Stimulated by Spatially Periodic Laser Radiation Fields.
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- Technical Physics Letters, 2005, v. 31, n. 9, p. 759, doi. 10.1134/1.2061738
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Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.
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- Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670
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Effect of Surface Modification on the Properties of Hydrogen-Sensitive GaAs-Based Schottky Diodes.
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- Technical Physics, 2003, v. 48, n. 5, p. 592, doi. 10.1134/1.1576473
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Effect of Hydrogen on the Photoelectronic Properties of GaAs/InGaAs Quantum-Well Heterostructures with an Island Palladium Layer on the Surface.
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- Technical Physics, 2002, v. 47, n. 10, p. 1268, doi. 10.1134/1.1514806
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Effect of Hydrogen on the Properties of Pd/GaAs/InGaAs Diode Structures with Quantum Wells.
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- Semiconductors, 2002, v. 36, n. 5, p. 552, doi. 10.1134/1.1478547
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- Article
Hydrogen Sensitivity of a Silicon Schottky Diode Increased by Modification of the Semiconductor Surface Microrelief.
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- Technical Physics Letters, 2002, v. 28, n. 5, p. 355, doi. 10.1134/1.1482735
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A Hydrogen-Sensitive Structure Based on Semi-Insulating Gallium Arsenide.
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- Technical Physics Letters, 2002, v. 28, n. 4, p. 320, doi. 10.1134/1.1477004
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