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Effects of Oxygen Flows and Annealing Temperatures on Optical, Electrical, and Structural Properties of Co-Sputtered In 2 O 3 -Ga 2 O 3 -Zn Thin Films.
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- Crystals (2073-4352), 2023, v. 13, n. 9, p. 1310, doi. 10.3390/cryst13091310
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- Article
The Fabrication of Indium–Gallium–Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors.
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- Coatings (2079-6412), 2022, v. 12, n. 8, p. 1217, doi. 10.3390/coatings12081217
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- Article
Electrical and Hysteresis Characteristics of Top-Gate InGaZnO Thin-Film Transistors with Oxygen Plasma Treatment Prior to TEOS Oxide Gate Dielectrics.
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- Coatings (2079-6412), 2022, v. 12, n. 3, p. 383, doi. 10.3390/coatings12030383
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- Article
Electrical Characteristics and Stability Improvement of Top-Gate In-Ga-Zn-O Thin-Film Transistors with Al 2 O 3 /TEOS Oxide Gate Dielectrics.
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- Coatings (2079-6412), 2020, v. 10, n. 12, p. 1146, doi. 10.3390/coatings10121146
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- Article