Found: 18
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Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions.
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- JETP Letters, 2010, v. 92, n. 6, p. 388, doi. 10.1134/S0021364010180062
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- Article
Optical Phonons in Ge Quantum Dots Obtained on Si(111).
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- JETP Letters, 2002, v. 75, n. 6, p. 264, doi. 10.1134/1.1481460
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- Article
Influence of the Si(111)-7×7 surface reconstruction on the diffusion of strontium atoms.
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- Journal of Experimental & Theoretical Physics, 2011, v. 113, n. 6, p. 972, doi. 10.1134/S1063776111140202
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Self-assembly of germanium islands under pulsed irradiation by a low-energy ion beam during heteroepitaxy of Ge/Si(100) structures.
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- Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 3, p. 517, doi. 10.1134/S1063776108030114
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- Article
Raman E <sub>1</sub> and E <sub>1</sub> + Δ<sub>1</sub> resonances in a system of unstrained germanium quantum dots.
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- Journal of Experimental & Theoretical Physics, 2006, v. 102, n. 5, p. 828, doi. 10.1134/S1063776106050153
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- Article
MODIFICATION OF GROWTH MODE OF Ge ON Si BY PULSED LOW-ENERGY ION-BEAM IRRADIATION.
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- International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 19, doi. 10.1142/S0219581X04001778
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- Article
Photoluminescence of compact GeSi quantum dot groups with increased probability of finding an electron in Ge.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-64098-x
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- Article
Different STM images of the superstructure on a clean Si(133)-6 × 2 surface.
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- JETP Letters, 2017, v. 105, n. 8, p. 477, doi. 10.1134/S0021364017080136
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- Article
Features of atomic processes at the formation of a wetting layer and nucleation of three-dimensional Ge islands on Si(111) and Si(100) surfaces.
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- JETP Letters, 2013, v. 96, n. 12, p. 794, doi. 10.1134/S0021364012240113
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- Article
Equilibrium Concentration of Kinks on the S<sub>B</sub> Steps of the Si(100) Surface.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2022, v. 16, n. 1, p. 140, doi. 10.1134/S1027451022010220
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- Article
Analysis of the dislocation structure at the Ge/Si(111) heterointerface.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 4, p. 787, doi. 10.1134/S1027451014030069
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- Article
Initial growth stages of Si-Ge-Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy.
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- Semiconductors, 2015, v. 49, n. 12, p. 1582, doi. 10.1134/S1063782615120222
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- Article
Nucleation and growth of ordered groups of SiGe quantum dots.
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- Semiconductors, 2015, v. 49, n. 2, p. 149, doi. 10.1134/S1063782615020256
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Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method.
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- Semiconductors, 2014, v. 48, n. 9, p. 1205, doi. 10.1134/S1063782614090206
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- Article
Study of initial stages of Pb growth on the Si (7710) surface by the method of scanning tunneling spectroscopy.
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- Semiconductors, 2007, v. 41, n. 5, p. 560, doi. 10.1134/S1063782607050168
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- Article
Causes of the Stability of Three-Bilayer Islands and Steps on a Si (111) Surface.
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- Semiconductors, 2005, v. 39, n. 8, p. 967, doi. 10.1134/1.2010695
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- Article
An Unusual Mechanism of Misfit Stress Relaxation in Thin Nanofilms.
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- Technical Physics Letters, 2019, v. 45, n. 11, p. 1144, doi. 10.1134/S1063785019110282
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- Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
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- Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
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- Article