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Passivation of InSb and HgCdTe Infrared Photodiodes by Polycrystalline CdTe.
Published in:
Journal of Electronic Materials, 2023, v. 52, n. 11, p. 7337, doi. 10.1007/s11664-023-10671-9
By:
- Tetyorkin, V.;
- Tsybrii, Z.;
- Tkachuk, A.;
- Vuichyk, M.;
- Svezhentsova, K.;
- Yevmenova, A.;
- Dmytruk, N.
Publication type:
Article
Structure and Properties of the Al–B–Si–C Coatings Deposited by Magnetron Sputtering.
Published in:
Journal of Superhard Materials, 2020, v. 42, n. 5, p. 311, doi. 10.3103/S1063457620050184
By:
- Kozak, A. O.;
- Ivashchenko, V. I.;
- Scrynskyy, P. L.;
- Muratov, V. B.;
- Tetyorkin, V. V.;
- Sukach, A. V.;
- Sinelnichenko, O. K.;
- Olifan, O. I.
Publication type:
Article
Dark current and 1/f noise in forward biased InAs photodiodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 466, doi. 10.15407/spqeo24.04.466
By:
- Tetyorkin, V. V.;
- Sukach, A. V.;
- Tkachuk, A. I.
Publication type:
Article
Shunt current in InAs diffused photodiodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 208, doi. 10.15407/spqeo23.02.208
By:
- Sukach, A. V.;
- Tetyorkin, V. V.;
- Tkachuk, A. I.
Publication type:
Article
1/ƒ noise and carrier transport mechanisms in InSb p+-n junctions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 374, doi. 10.15407/spqeo21.04.374
By:
- Tetyorkin, V. V.;
- Sukach, A. V.;
- Tkachuk, A. I.;
- Trotsenko, S. P.
Publication type:
Article
Trap-assisted conductivity in anodic oxide on InSb.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 470, doi. 10.15407/spqeo20.04.470
By:
- Beketov, G. V.;
- Sukach, A. V.;
- Tetyorkin, V. V.;
- Trotsenko, S. P.
Publication type:
Article
Effect of thermal annealing on electrical and photoelectrical properties of n-InSb.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 1, p. 105, doi. 10.15407/spqeo20.01.105
By:
- Stariy, S. V.;
- Sukach, A. V.;
- Tetyorkin, V. V.;
- Yukhymchuk, V. O.;
- Stara, T. R.
Publication type:
Article
Electrical properties of InSb p-n junctions prepared by diffusion methods.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 295, doi. 10.15407/spqeo19.03.295
By:
- Sukach, A. V.;
- Tetyorkin, V. V.;
- Tkachuk, A. I.
Publication type:
Article
Characterization of grain boundaries in CdTe polycrystalline films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 428, doi. 10.15407/spqeo18.04.428
By:
- Tetyorkin, V. V.;
- Sukach, A. V.;
- Boiko, V. A.;
- Tkachuk, A. I.
Publication type:
Article
Carrier transport mechanisms in reverse biased InSb p-n junctions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 267, doi. 10.15407/spqeo18.03.267
By:
- Sukach, A. V.;
- Tetyorkin, V. V.;
- Tkachuk, A. I.
Publication type:
Article
Carrier transport mechanisms in InSb diffusion p-n junctions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 325
By:
- Sukach, A.;
- Tetyorkin, V.;
- Voroschenko, A.;
- Tkachuk, A.;
- Kravetskii, M.;
- Lucyshyn, I.
Publication type:
Article
Conductivity type conversion in p-CdZnTe under pulsed laser irradiation.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 291
By:
- Tetyorkin, V. V.;
- Sukach, A. V.;
- Krolevec, N. M.
Publication type:
Article
Heterostructure ohmic contacts to p-CdTe polycrystalline films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 268
By:
- Sukach, A. V.;
- Tetyorkin, V. V.;
- Tkachuk, A. I.
Publication type:
Article
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 1, p. 59
By:
- Tetyorkin, V. V.;
- Sukach, A. V.;
- Tkachuk, A. I.;
- Movchan, S. P.
Publication type:
Article
Photoluminescence studies of CdTe polycrystalline films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2012, v. 15, n. 4, p. 340
By:
- Tetyorkin, V. V.;
- Sukach, A. V.;
- Stariy, S. V.;
- Boiko, V. A.
Publication type:
Article
Tunneling current via dislocations in InAs and InSb infrared photodiodes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 416
By:
- Sukach, A. V.;
- Tetyorkin, V. V.;
- Krolevec, N. M.
Publication type:
Article
Layered structure formation in Hg1-xCdxTe films after high-frequency sonication.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 4, p. 31, doi. 10.15407/spqeo9.04.031
By:
- Savkina, R. K.;
- Sizov, F. F.;
- Smirnov, A. B.;
- Tetyorkin, V. V.
Publication type:
Article
Investigation of Al-ZERODUR interface by Raman and secondary ion mass-spectroscopy.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 2, p. 37
By:
- Berezhinsky, L. I.;
- Maslov, V. P.;
- Tetyorkin, V. V.;
- Yukhymchuk, V. A.
Publication type:
Article
Mechanisms of dark conductivity and photosensitivity in PbSe polycrystalline films on glass and Si substrates.
Published in:
Optical Engineering, 1994, v. 33, n. 5, p. 1450
By:
- Tetyorkin, Vladimir V.;
- Orletskii, V. B.;
- Sizov, Feodor F.;
- Tashtanbajev, N. O.;
- Stepanushkin, A. G.
Publication type:
Article
Properties of SbS and SbSe thin films obtained by pulsed laser ablation.
Published in:
Semiconductors, 2013, v. 47, n. 7, p. 1003, doi. 10.1134/S1063782613070233
By:
- Virt, I.;
- Rudyj, I.;
- Kurilo, I.;
- Lopatynskyi, I.;
- Linnik, L.;
- Tetyorkin, V.;
- Potera, P.;
- Luka, G.
Publication type:
Article
Deposition of thin Bi2Te3 and Sb2Te3 films by pulsed laser ablation.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 544, doi. 10.1134/S1063782610040238
By:
- Virt, I. S.;
- Shkumbatyuk, T. P.;
- Kurilo, I. V.;
- Rudyi, I. O.;
- Lopatinskyi, T. Ye.;
- Linnik, L. F.;
- Tetyorkin, V. V.;
- Phedorov, A. G.
Publication type:
Article

Found: 21

Passivation of InSb and HgCdTe Infrared Photodiodes by Polycrystalline CdTe.

Structure and Properties of the Al–B–Si–C Coatings Deposited by Magnetron Sputtering.

Dark current and 1/f noise in forward biased InAs photodiodes.

Shunt current in InAs diffused photodiodes.

1/ƒ noise and carrier transport mechanisms in InSb p<sup>+</sup>-n junctions.

Trap-assisted conductivity in anodic oxide on InSb.

Effect of thermal annealing on electrical and photoelectrical properties of n-InSb.

Electrical properties of InSb p-n junctions prepared by diffusion methods.

Characterization of grain boundaries in CdTe polycrystalline films.

Carrier transport mechanisms in reverse biased InSb p-n junctions.

Carrier transport mechanisms in InSb diffusion p-n junctions.

Conductivity type conversion in p-CdZnTe under pulsed laser irradiation.

Heterostructure ohmic contacts to p-CdTe polycrystalline films.

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions.

Photoluminescence studies of CdTe polycrystalline films.

Tunneling current via dislocations in InAs and InSb infrared photodiodes.

Layered structure formation in Hg<sub>1-x</sub>Cd<sub>x</sub>Te films after high-frequency sonication.

Investigation of Al-ZERODUR interface by Raman and secondary ion mass-spectroscopy.

Mechanisms of dark conductivity and photosensitivity in PbSe polycrystalline films on glass and Si substrates.

Properties of SbS and SbSe thin films obtained by pulsed laser ablation.

Deposition of thin Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> films by pulsed laser ablation.