Works by Terukov, E. I.

Results: 174

Study the Radiation Effect on the Photovoltaic Properties of Silicon Heterojunction Solar Cells.

Published in:

Applied Solar Energy (19349424), 2024, v. 60, n. 5, p. 672, doi. 10.3103/S0003701X24602692

By:

Utamuradova, Sh. B.;
Terukov, E. I.;
Ataboev, O. K.;
Panaiotti, I. E.;
Gudovskikh, A. S.;
Baranov, A. I.;
Mikhaylov, O. P.;
Bazeley, A. A.;
Iniyatova, K. X.

Publication type:

Article

Investigation of Sodium and Copper Halides by the Method of Mössbauer Spectroscopy on the Isotope 67Zn.

Published in:

Technical Physics Letters, 2023, v. 49, p. S334, doi. 10.1134/S1063785023010248

By:

Marchenko, A. V.;
Terukov, E. I.;
Nasredinov, F. S.;
Kiselev, V. S.;
Seregin, P. P.

Publication type:

Article

Nature of the Local Environment of Germany Atoms in Amorphous Films (GeTe)x(Sb2Te3).

Published in:

Technical Physics Letters, 2023, v. 49, p. S380, doi. 10.1134/S1063785023900820

By:

Marchenko, A. V.;
Terukov, E. I.;
Nasredinov, F. S.;
Petrushin, Yu. A.;
Seregin, P. P.

Publication type:

Article

Investigation of Radiation Resistance of Heterostructure Silicon Solar Cells.

Published in:

Technical Physics Letters, 2023, v. 49, p. S200, doi. 10.1134/S1063785023900741

By:

Kalinovskii, V. S.;
Terukov, E. I.;
Prudchenko, K. K.;
Bazeley, A. A.;
Kontrosh, E. V.;
Tolkachev, I. A.;
Titov, A. A.

Publication type:

Article

Development and Study of a Model of an Autonomous Energy Information Station of Free Space Optical Communication.

Published in:

Technical Physics Letters, 2023, v. 49, p. S26, doi. 10.1134/S1063785023900285

By:

Kalinovskii, V. S.;
Terukov, E. I.;
Ascheulov, Yu. V.;
Kontrosh, E. V.;
Yuferev, V. S.;
Prudchenko, K. K.;
Chekalin, A. V.;
Terukova, E. E.;
Tolkachev, I. A.;
Goncharov, S. E.;
Ustinov, V. M.

Publication type:

Article

Optical and Electrical Properties of Graphene Oxide.

Published in:

Optics & Spectroscopy, 2018, v. 125, n. 6, p. 1014, doi. 10.1134/S0030400X18120032

By:

Babaev, A. A.;
Zobov, M. E.;
Kornilov, D. Yu.;
Tkachev, S. V.;
Terukov, E. I.;
Levitskii, V. S.

Publication type:

Article

A Low Temperature Cell for High Frequency Electrophysical Measurements of Semiconductor Devices.

Published in:

Instruments & Experimental Techniques, 2021, v. 64, n. 6, p. 886, doi. 10.1134/S0020441221050146

By:

Aimaganbetov, K. P.;
Aldiyarov, A. U.;
Zhantuarov, S. R.;
Almasov, N. Zh.;
Terukov, E. I.;
Tokmoldin, N. S.

Publication type:

Article

Local Structure and Anti-Structural Defects of Tin in Amorphous and Crystalline Ge2Sb2Te5 Films.

Published in:

Semiconductors, 2021, v. 55, n. 1, p. 1, doi. 10.1134/S1063782621010127

By:

Marchenko, A. V.;
Terukov, E. I.;
Nasredinov, F. S.;
Petrushin, Yu. A.;
Seregin, P. P.

Publication type:

Article

Two-Stage Synthesis of Structured Microsystems Based on Zinc-Oxide Nanorods by Ultrasonic Spray Pyrolysis and the Low-Temperature Hydrothermal Method.

Published in:

Semiconductors, 2020, v. 54, n. 11, p. 1496, doi. 10.1134/S1063782620110238

By:

Ryabko, A. A.;
Maximov, A. I.;
Verbitskii, V. N.;
Levitskii, V. S.;
Moshnikov, V. A.;
Terukov, E. I.

Publication type:

Article

Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (= 21.5 mol %).

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1514, doi. 10.1134/S1063782619110228

By:

Undalov, Yu. K.;
Terukov, E. I.;
Trapeznikova, I. N.

Publication type:

Article

Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass.

Published in:

Semiconductors, 2019, v. 53, n. 8, p. 1114, doi. 10.1134/S1063782619080244

By:

Abolmasov, S. N.;
Abramov, A. S.;
Semenov, A. V.;
Shakhray, I. S.;
Terukov, E. I.;
Malchukova, E. V.;
Trapeznikova, I. N.

Publication type:

Article

Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses.

Published in:

Semiconductors, 2019, v. 53, n. 5, p. 711, doi. 10.1134/S1063782619050166

By:

Marchenko, A. V.;
Seregin, P. P.;
Terukov, E. I.;
Shakhovich, K. B.

Publication type:

Article

New Manufacturing Approaches to Texture Formation and Thermal Expansion Matching in the Design of Highly Efficient Silicon Solar Photoconverters.

Published in:

Semiconductors, 2018, v. 52, n. 13, p. 1782, doi. 10.1134/S1063782618130134

By:

Nikitin, S. E.;
Bobyl, A. V.;
Avezova, N. R.;
Terukov, E. I.

Publication type:

Article

Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4-Ar-O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix ( = 15.5 mol %).

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1255, doi. 10.1134/S1063782618100214

By:

Undalov, Yu. K.;
Terukov, E. I.;
Trapeznikova, I. N.

Publication type:

Article

Study of Deep Levels in a HIT Solar Cell.

Published in:

Semiconductors, 2018, v. 52, n. 7, p. 926, doi. 10.1134/S1063782618070254

By:

Vikhrov, S. P.;
Vishnyakov, N. V.;
Gudzev, V. V.;
Ermachikhin, A. V.;
Shilina, D. V.;
Litvinov, V. G.;
Maslov, A. D.;
Mishustin, V. G.;
Terukov, E. I.;
Titov, A. S.

Publication type:

Article

Features of 63,65Cu NMR Spectra in the Local Field of Samples of CuFeS2 Semiconductor Mineral from Oceanic Sulfide Deposits.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 969, doi. 10.1134/S1063782618080134

By:

Matukhin, V. L.;
Pogoreltsev, A. I.;
Gavrilenko, A. N.;
Garkavyi, S. O.;
Shmidt, E. V.;
Babaeva, S. F.;
Sukhanova, A. A.;
Terukov, E. I.

Publication type:

Article

Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers.

Published in:

Semiconductors, 2018, v. 52, n. 7, p. 931, doi. 10.1134/S1063782618070230

By:

Terukov, E. I.;
Abramov, A. S.;
Andronikov, D. A.;
Emtsev, K. V.;
Panaiotti, I. E.;
Titov, A. S.;
Shelopin, G. G.

Publication type:

Article

On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 708, doi. 10.1134/S1063782618060222

By:

Terukov, E. I.;
Marchenko, A. V.;
Seregin, P. P.;
Zhukov, N. N.

Publication type:

Article

Study of the photocatalytic and sensor properties of ZnO/SiO2 nanocomposite layers.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1636, doi. 10.1134/S106378261312004X

By:

Bozhinova, A. S.;
Kaneva, N. V.;
Kononova, I. E.;
Nalimova, S. S.;
Syuleiman, Sh. A.;
Papazova, K. I.;
Dimitrov, D. Ts.;
Moshnikov, V. A.;
Terukov, E. I.

Publication type:

Article

Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1271, doi. 10.1134/S1063782613090108

By:

Khenkin, M. V.;
Emelyanov, A. V.;
Kazanskii, A. G.;
Forsh, P. A.;
Kashkarov, P. K.;
Terukov, E. I.;
Orekhov, D. L.;
Roca i Cabarrocas, P.

Publication type:

Article

Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics.

Published in:

Semiconductors, 2013, v. 47, n. 9, p. 1252, doi. 10.1134/S1063782613090066

By:

Emelyanov, V. M.;
Abramov, A. S.;
Bobyl, A. V.;
Verbitsky, V. N.;
Gudovskikh, A. S.;
Ershenko, E. M.;
Kudryashov, S. A.;
Terukov, E. I.;
Chosta, O. I.;
Shvarts, M. Z.

Publication type:

Article

Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 978, doi. 10.1134/S1063782610080026

By:

Bordovsky, G. A.;
Gladkikh, P. V.;
Kozhokar, M. Yu.;
Marchenko, A. V.;
Seregin, P. P.;
Terukov, E. I.

Publication type:

Article

Development and photoelectric properties of In/ p-AgAsS surface-barrier structures.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1025, doi. 10.1134/S1063782610080129

By:

Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

Photoconductivity of two-phase hydrogenated silicon films.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 494, doi. 10.1134/S1063782610040159

By:

Kazanskii, A. G.;
Terukov, E. I.;
Forsh, P. A.;
Kleider, J. P.

Publication type:

Article

Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties.

Published in:

Semiconductors, 2010, v. 44, n. 3, p. 354, doi. 10.1134/S1063782610030140

By:

Nikolaev, Yu. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.;
Heller, N. M.;
Ivanov, A. G.;
Shamanin, V. V.

Publication type:

Article

Growth of the (In2S3) x(FeIn2S4)1 − x single crystals and properties of photoelectric structures on their basis.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 37, doi. 10.1134/S1063782610010057

By:

Bodnar, I. V.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article

Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 24, doi. 10.1134/S1063782610010021

By:

Bordovsky, G. A.;
Marchenko, A. V.;
Seregin, P. P.;
Smirnova, N. N.;
Terukov, E. I.

Publication type:

Article

Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1193, doi. 10.1134/S1063782609090164

By:

Bordovsky, G. A.;
Terukov, E. I.;
Anisimova, N. I.;
Marchenko, A. V.;
Seregin, P. P.

Publication type:

Article

Thin-film polycrystalline n-ZnO/ p-CuO heterojunction.

Published in:

Semiconductors, 2009, v. 43, n. 6, p. 765, doi. 10.1134/S1063782609060153

By:

Lisitski, O. L.;
Kumekov, M. E.;
Kumekov, S. E.;
Terukov, E. I.

Publication type:

Article

The effect of amorphization on the local structure of arsenic chalcogenides.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 4, doi. 10.1134/S1063782609010023

By:

Bordovsky, G. A.;
Marchenko, A. V.;
Seregin, P. P.;
Terukov, E. I.

Publication type:

Article

Effect of electric field in the course of obtaining a-SiO x :H(Er, O) films by dc magnetron sputtering on their composition and photoluminescence intensity of erbium ions.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1327, doi. 10.1134/S106378260811016X

By:

Undalov, Yu. K.;
Terukov, E. I.;
Gusev, O. B.;
Lebedev, V. M.;
Trapeznikova, I. N.

Publication type:

Article

Properties and structure of (As2Se3)1 − z (SnSe2) z − x (Tl2Se) x and (As2Se3)1 − z (SnSe) z − x (Tl2Se) x glasses

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1323, doi. 10.1134/S1063782608110158

By:

Bordovsky, G. A.;
Marchenko, A. V.;
Terukov, E. I.;
Seregin, P. P.;
Likhodeeva, T. V.

Publication type:

Article

Electrical properties of n-ZnO/ p-CuO heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 3, p. 288, doi. 10.1134/S1063782607030098

By:

Vermenichev, B. M.;
Lisitskiĭ, O. L.;
Kumekov, M. E.;
Kumekov, S. E.;
Terukov, E. I.;
Tokmoldin, S. Zh.

Publication type:

Article

Fabrication and photoelectric properties of oxide/CuIn5Se8 heterojunctions.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 155, doi. 10.1134/S1063782607020078

By:

Bodnar', I. V.;
Vaĭpolin, A. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

Photoelectric cells based on n-Ox/n-InSe heterojunctions: fabrication and properties.

Published in:

Semiconductors, 2006, v. 40, n. 11, p. 1321, doi. 10.1134/S1063782606110121

By:

Il'chuk, G. A.;
Kusznezh, V. V.;
Petrus', R. Yu.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.;
Ukrainets, V. O.

Publication type:

Article

Electron Exchange between Neutral and Ionized Germanium Centers in PbSe.

Published in:

Semiconductors, 2005, v. 39, n. 12, p. 1371, doi. 10.1134/1.2140306

By:

Terukov, E. I.;
Khuzhakulov, É. S.

Publication type:

Article

Mössbauer Study of the Ge Two-Electron Donor Centers in PbSe.

Published in:

Semiconductors, 2005, v. 39, n. 12, p. 1369, doi. 10.1134/1.2140305

By:

Terukov, E. I.;
Khuzhakulov, É. S.

Publication type:

Article

Photosensitivity of Photocells Based on ZnO/CdS/Cu(In, Ga)Se2 Heterostructures and Exposed to γ-ray Radiation.

Published in:

Semiconductors, 2005, v. 39, n. 12, p. 1406, doi. 10.1134/1.2140314

By:

Emtsev, V. V.;
Nikolaev, Yu. A.;
Poloskin, D. S.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.;
Yakushev, M. V.

Publication type:

Article

Photosensitivity of Heterostructures Based on Finely Ground Semiconductor Phases.

Published in:

Semiconductors, 2005, v. 39, n. 11, p. 1294, doi. 10.1134/1.2128453

By:

Nikolaev, Yu. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.;
Ushakova, T. N.

Publication type:

Article

The Effect of Erbium and Oxygen on the Photoluminescence Intensity of Erbium and the Composition of a-SiOx:(H, Er, O) Films Deposited by DC Magnetron Sputtering.

Published in:

Semiconductors, 2005, v. 39, n. 8, p. 944, doi. 10.1134/1.2010690

By:

Undalov, Yu. K.;
Terukov, E. I.;
Gusev, O. B.;
Kudoyarova, V. Kh.

Publication type:

Article

IV International Conference on Amorphous and Microcrystalline Semiconductors (July 5–7, 2004).

Published in:

Semiconductors, 2005, v. 39, n. 8, p. 878, doi. 10.1134/1.2010677

By:

Terukov, E. I.

Publication type:

Article

Permittivity Spectra and Characteristic Energy Losses of Electrons in ZnO at 100 K.

Published in:

Semiconductors, 2005, v. 39, n. 8, p. 898, doi. 10.1134/1.2010682

By:

Sobolev, V. Val.;
Sobolev, V. V.;
Terukov, E. I.

Publication type:

Article

Characterization of an a-Si:H/c-Si Interface by Admittance Spectroscopy.

Published in:

Semiconductors, 2005, v. 39, n. 8, p. 904, doi. 10.1134/1.2010683

By:

Gudovskikh, A. S.;
Kleider, J.-P.;
Terukov, E. I.

Publication type:

Article

A Study of the Local Electronic and Atomic Structure in a-SixC1 – x Amorphous Alloys Using Ultrasoft X-ray Emission Spectroscopy.

Published in:

Semiconductors, 2005, v. 39, n. 7, p. 830, doi. 10.1134/1.1992643

By:

Terekhov, V. A.;
Terukov, E. I.;
Trapeznikova, I. N.;
Kashkarov, V. M.;
Kurilo, O. V.;
Turishchev, S. Yu.;
Golodenko, A. B.;
Domashevskaya, É. P.

Publication type:

Article

Photoconversion in n-ZnO:Al/PdPc/p-CuIn3Se5 Structures.

Published in:

Semiconductors, 2005, v. 39, n. 4, p. 402, doi. 10.1134/1.1900252

By:

Bodnar', I. V.;
Dmitrieva, E. S.;
Nikitin, S. E.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

Fabrication and Photoelectric Properties of n-ZnO:Al/PdPc/p-Si Structures.

Published in:

Semiconductors, 2005, v. 39, n. 4, p. 409, doi. 10.1134/1.1900254

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

The Charge-Transport Mechanisms and Photosensitivity of n-ZnO:Al/CuPc/p-Cu(In,Ga)Se2 Structures.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 331, doi. 10.1134/1.1882796

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud', V. Yu.;
Rud', Yu. V.;
Terukov, E. I.

Publication type:

Article

The Density of States in the Mobility Gap of Amorphous Hydrogenated Silicon Doped with Erbium.

Published in:

Semiconductors, 2005, v. 39, n. 3, p. 351, doi. 10.1134/1.1882800

By:

Biryukov, A. V.;
Kazanski&icaron;, A. G.;
Terukov, E. I.;
Khabarova, K. Yu.

Publication type:

Article

Photovoltaic Properties of n-ZnO:Al/PbPc/p-Si Structures.

Published in:

Semiconductors, 2005, v. 39, n. 2, p. 218, doi. 10.1134/1.1864202

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article

Photoelectric Properties of ZnO/CuPc/Si Structures.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1308, doi. 10.1134/1.1823065

By:

Il'chuk, G. A.;
Nikitin, S. E.;
Nikolaev, Yu. A.;
Rud, V. Yu.;
Rud, Yu. V.;
Terukov, E. I.

Publication type:

Article