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ZnO NANOWIRES GROWN ON Al2O3-ZnAl2O4 NANOSTRUCTURE USING SOLID-VAPOR MECHANISM.
Published in:
Archives of Metallurgy & Materials, 2023, v. 68, n. 3, p. 1177, doi. 10.24425/amm.2023.145491
By:
- ZAJKOWSKA-PIETRZAK, W.;
- TURCZYŃSKI, J.;
- KUROWSKA, B.;
- TEISSEYRE, H.;
- FRONC, K.;
- DĄBROWSKI, J.;
- KRET, S.
Publication type:
Article
Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1-xN Quantum Wells.
Published in:
Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 663, doi. 10.12693/APhysPolA.119.663
By:
- Bardyszewski, W.;
- Łepkowski, S. P.;
- Teisseyre, H.
Publication type:
Article
Comparison of wurtzite GaN/AlN and ZnO/MgO short-period superlattices: Calculation of band gaps and built-in electric field.
Published in:
Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600704
By:
- Gorczyca, I.;
- Teisseyre, H.;
- Suski, T.;
- Christensen, N. E.
Publication type:
Article
Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies.
Published in:
Physica Status Solidi (B), 2007, v. 244, n. 6, p. 1825, doi. 10.1002/pssb.200674862
By:
- Suski, T.;
- Kamińska, A.;
- Franssen, G.;
- Teisseyre, H.;
- Dmowski, L. H.;
- Plesiewicz, J. A.;
- Lu, H. L.;
- Schaff, W. J.;
- Kurouchi, M.;
- Nanishi, Y.
Publication type:
Article
Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure.
Published in:
Physica Status Solidi (B), 2007, v. 244, n. 1, p. 32, doi. 10.1002/pssb.200672503
By:
- Franssen, G.;
- Suski, T.;
- Perlin, P.;
- Bohdan, R.;
- Trzeciakowski, W.;
- Teisseyre, H.;
- Khachapuridze, A.;
- Targowski, G.;
- Krowicki, K.;
- Czernecki, R.;
- Leszczyński, M.;
- Kurouchi, M.;
- Nanishi, Y.;
- Lu, H.;
- Schaff, W.
Publication type:
Article
High pressure studies of radiative recombination mechanisms in InN.
Published in:
Physica Status Solidi (B), 2007, v. 244, n. 1, p. 38, doi. 10.1002/pssb.200672504
By:
- Suski, T.;
- Franssen, G.;
- Teisseyre, H.;
- Khachapuridze, A.;
- Dmowski, L. H.;
- Plesiewicz, J. A.;
- Kamińska, A.;
- Lu, H.;
- Schaff, W.
Publication type:
Article
Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure.
Published in:
Physica Status Solidi (B), 2004, v. 241, n. 14, p. 3285, doi. 10.1002/pssb.200405208
By:
- Franssen, G.;
- Kamińska, A.;
- Suski, T.;
- Suchocki, A.;
- Kazlauskas, K.;
- Tamulaitis, G.;
- Žukauskas, A.;
- Czernecki, R.;
- Teisseyre, H.;
- Perlin, P.;
- Leszczyński, M.;
- Boćkowski, M.;
- Grzegory, I.;
- Grandjean, N.
Publication type:
Article
Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals.
Published in:
Physica Status Solidi (B), 2003, v. 240, n. 2, p. 289, doi. 10.1002/pssb.200303259
By:
- F. Tuomisto;
- T. Suski;
- H. Teisseyre;
- M. Krysko;
- M. Leszczynski;
- B. Lucznik;
- I. Grzegory;
- S. Porowski;
- D. Wasik;
- A. Witowski;
- W. Gebicki;
- P. Hageman;
- K. Saarinen
Publication type:
Article
Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies.
Published in:
Physica Status Solidi (B), 2003, v. 235, n. 2, p. 225, doi. 10.1002/pssb.200301561
By:
- Suski, T.;
- Teisseyre, H.;
- Łepkowski, S. P.;
- Perlin, P.;
- Mariette, H.;
- Kitamura, T.;
- Ishida, Y.;
- Okumura, H.;
- Chichibu, S. F.
Publication type:
Article
Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 764, doi. 10.1002/1521-3951(200212)234:3<764::AID-PSSB764>3.0.CO;2-0
By:
- Teisseyre, H.;
- Suski, T.;
- Łepkowski, S.P.;
- Anceau, S.;
- Perlin, P.;
- Lefebvre, P.;
- Kończewicz, L.;
- Hirayama, H.;
- Aoyagi, Y.
Publication type:
Article
Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells.
Published in:
Physica Status Solidi (B), 2002, v. 234, n. 3, p. 759, doi. 10.1002/1521-3951(200212)234:3<759::AID-PSSB759>3.0.CO;2-L
By:
- Suski, T.;
- Teisseyre, H.;
- Łepkowski, S.P.;
- Perlin, P.;
- Kitamura, T.;
- Ishida, Y.;
- Okumura, H.;
- Chichibu, SF.
Publication type:
Article
Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN.
Published in:
Physica Status Solidi (B), 1996, v. 198, n. 1, p. 235, doi. 10.1002/pssb.2221980131
By:
- Teisseyre, H.;
- Kozankiewicz, B.;
- Leszczynski, M.;
- Grzegory, I.;
- Suski, T.;
- Bockowski, M.;
- Porowski, S.;
- Pakula, K.;
- Mensz, P. M.;
- Bhat, I. B.
Publication type:
Article

Found: 12

ZnO NANOWIRES GROWN ON Al<sub>2</sub>O<sub>3</sub>-ZnAl<sub>2</sub>O<sub>4</sub> NANOSTRUCTURE USING SOLID-VAPOR MECHANISM.

Pressure Dependence of Exciton Binding Energy in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells.

Comparison of wurtzite GaN/AlN and ZnO/MgO short-period superlattices: Calculation of band gaps and built-in electric field.

Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies.

Investigation of polarization-induced electric field screening in InGaN light emitting diodes by means of hydrostatic pressure.

High pressure studies of radiative recombination mechanisms in InN.

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure.

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals.

Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies.

Small Built-in Electric Fields in Quaternary InAlGaN Heterostructures.

Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells.

Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN.