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Ion Implantation in Narrow-Gap Cd<sub>x</sub>Hg<sub>1-x</sub>Te Solid Solutions.
- Published in:
- Russian Physics Journal, 2018, v. 61, n. 6, p. 1005, doi. 10.1007/s11182-018-1490-7
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- Article
High-Sensitive Two-Layer Photoresistors Based on p-Cd<sub>x</sub>Hg<sub>1-x</sub>Te with a Converted Near-Surface Layer.
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- Russian Physics Journal, 2018, v. 60, n. 12, p. 2186, doi. 10.1007/s11182-018-1344-3
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- Article
Effect of the Graded-Gap Layer Composition on the Formation of n -n -p Structures in Boron-Implanted Heteroepitaxial CdHgTe Layers.
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- Russian Physics Journal, 2014, v. 57, n. 3, p. 345, doi. 10.1007/s11182-014-0246-2
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- Article
Problem of fabrication of diamond-based high-power microwave FETs.
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- Journal of Communications Technology & Electronics, 2014, v. 59, n. 4, p. 379, doi. 10.1134/S106422691403005X
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- Article
FET on hydrogenated diamond surface.
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- Journal of Communications Technology & Electronics, 2014, v. 59, n. 3, p. 282, doi. 10.1134/S1064226914030061
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- Article
An Investigation into the Effect of High-Power Pulse IR Radiation on the Properties of Surfaces of CdHgTe Heteroepitaxial Layers.
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- Russian Physics Journal, 2013, v. 56, n. 8, p. 882, doi. 10.1007/s11182-013-0113-6
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- Article
Low-Temperature Activation of Ion-Implanted Boron and Nitrogen Ions in Cd<sub>x</sub>Hg<sub>1–x</sub>Te Heteroepitaxial Layers.
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- Russian Physics Journal, 2013, v. 56, n. 7, p. 763, doi. 10.1007/s11182-013-0098-1
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- Article
The effect of boron implantation modes on the parameters of photodiodes produced in the CdHgTe heteroepitaxial structures.
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- Russian Physics Journal, 2013, v. 56, n. 5, p. 599, doi. 10.1007/s11182-013-0074-9
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- Article
Influence of High-Power Pulsed IR Laser Radiation on the Electrophysical Properties of CdHg-Те Heteroepitaxial Layers.
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- Russian Physics Journal, 2013, v. 55, n. 12, p. 1373, doi. 10.1007/s11182-013-9970-2
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- Article
A study of a hygrothermal method of grain moisture control in the drying process.
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- Measurement Techniques, 2012, v. 55, n. 1, p. 104, doi. 10.1007/s11018-012-9924-z
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- Article
Model representation of the transmission of high-power pulsed laser IR radiation in the fundamental absorption region in CdHgTe epitaxial layers.
- Published in:
- Russian Physics Journal, 2011, v. 53, n. 9, p. 936, doi. 10.1007/s11182-011-9513-7
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- Article
Ion implantation into heteroepitaxial Cd<sub> x</sub>Hg<sub>1– x</sub>Te grown by molecular-beam epitaxy.
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- Russian Physics Journal, 2008, v. 51, n. 10, p. 1001, doi. 10.1007/s11182-009-9142-6
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- Article
Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching.
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- Russian Physics Journal, 2008, v. 51, n. 9, p. 936, doi. 10.1007/s11182-009-9134-6
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- Article
The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE.
- Published in:
- Russian Physics Journal, 2006, v. 49, n. 9, p. 929, doi. 10.1007/s11182-006-0204-8
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- Article