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Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200836
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Development of High‐Reflectivity and Antireflection Dielectric Multilayer Mirrors for AlGaN‐Based Ultraviolet‐B Laser Diodes and their Device Applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200831
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Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/m‐plane Sapphire Template.
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- Physica Status Solidi (B), 2023, v. 260, n. 8, p. 1, doi. 10.1002/pssb.202200492
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Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays.
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- Nanophotonics (21928606), 2023, v. 12, n. 15, p. 3077, doi. 10.1515/nanoph-2023-0051
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A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes.
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- Crystals (2073-4352), 2023, v. 13, n. 3, p. 524, doi. 10.3390/cryst13030524
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Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs.
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- Nanophotonics (21928606), 2022, v. 11, n. 21, p. 4793, doi. 10.1515/nanoph-2022-0388
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Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions.
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- Physica Status Solidi (B), 2022, v. 259, n. 6, p. 1, doi. 10.1002/pssb.202100221
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Emission characteristics of GaInN/GaN multiple quantum shell nanowire-based LEDs with different p-GaN growth conditions.
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- Nanophotonics (21928606), 2021, v. 10, n. 13, p. 3441, doi. 10.1515/nanoph-2021-0210
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Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-74585-w
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Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 10, p. 2075, doi. 10.3390/nano10102075
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Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 14, p. 1, doi. 10.1002/pssa.201900864
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High Crystallinity and Highly Relaxed Al<sub>0.60</sub>Ga<sub>0.40</sub>N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 14, p. 1, doi. 10.1002/pssa.201900868
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Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900713
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Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900774
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Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900715
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Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900597
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Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 4, p. 788, doi. 10.3390/app9040788
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High-Power GaN-Based Vertical-Cavity Surface-Emitting Lasers with AlInN/GaN Distributed Bragg Reflectors.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 3, p. 416, doi. 10.3390/app9030416
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Tuning the Resonant Frequency of a Surface Plasmon by Double-Metallic Ag/Au Nanoparticles for High-Efficiency Green Light-Emitting Diodes.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 2, p. 305, doi. 10.3390/app9020305
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A GaN‐Based VCSEL with a Convex Structure for Optical Guiding.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700648
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Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700506
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Annealing of the sputtered AlN buffer layer on r-plane sapphire and its effect on a-plane GaN crystalline quality.
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- Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600723
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Theoretical investigation of nitride nanowire-based quantum-shell lasers.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600867
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Unique Electronic States in Non-centrosymmetric Cubic Compounds.
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- Journal of Electronic Materials, 2017, v. 46, n. 6, p. 3572, doi. 10.1007/s11664-016-5265-z
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Distribution of 1,2-dichloropropane in blood and other tissues of rats after oral administration.
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- Journal of Toxicological Sciences, 2017, v. 42, n. 2, p. 121, doi. 10.2131/jts.42.121
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Lung carcinogenicity of inhaled multi-walled carbon nanotube in rats.
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- Particle & Fibre Toxicology, 2016, p. 1, doi. 10.1186/s12989-016-0164-2
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GaInN-based tunnel junctions with high InN mole fractions grown by MOVPE.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1127, doi. 10.1002/pssb.201451507
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Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 920, doi. 10.1002/pssa.201431730
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Low-temperature preparation of transparent conductive Al-doped ZnO thin films by a novel sol-gel method.
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- Journal of Materials Science, 2014, v. 49, n. 14, p. 4722, doi. 10.1007/s10853-014-8172-9
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Electronic states in antiferromagnet UCd<sub>11</sub> and reference compound ThCd<sub>11</sub>: studied by the de Haas-van Alphen effect.
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- Physica Status Solidi (B), 2013, v. 250, n. 3, p. 642, doi. 10.1002/pssb.201200765
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Analysis of strain relaxation process in GaInN/GaN heterostructure by in situ X-ray diffraction monitoring during metalorganic vapor-phase epitaxial growth.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 3, p. 211, doi. 10.1002/pssr.201307023
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Nitride-based hetero-field-effect-transistor-type photosensors with extremely high photosensitivity.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 3, p. 215, doi. 10.1002/pssr.201206483
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Properties of nitride-based photovoltaic cells under concentrated light illumination.
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 4, p. 145, doi. 10.1002/pssr.201206038
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Cover Picture: Properties of nitride-based photovoltaic cells under concentrated light illumination (Phys. Status Solidi RRL 4/2012).
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- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 4, p. n/a, doi. 10.1002/pssr.201206038
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Differences in spontaneous fetal abnormalities among three outbred stocks of Wistar Hannover rats in Japan.
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- Congenital Anomalies, 2011, v. 51, n. 3, p. 149, doi. 10.1111/j.1741-4520.2010.00305.x
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Low leakage current in AlGaN/GaN HFETs with preflow of Mg source before growth of u-GaN buffer layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1607, doi. 10.1002/pssa.201001020
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AlGaN/GaInN/GaN heterostructure field-effect transistor.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1614, doi. 10.1002/pssa.201001153
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Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 5, p. 1191, doi. 10.1002/pssa.201001019
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Construction of a Novel Topological Frustrated System: A Frustrated Metal Cluster in a Helical Space.
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- Chemistry - A European Journal, 2010, v. 16, n. 36, p. 11139, doi. 10.1002/chem.201000676
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Pressure-induced superconductivity in CePd<sub>5</sub>Al<sub>2</sub> and CeRhGe<sub>2</sub>, new family of heavy fermion superconductors.
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- Physica Status Solidi (B), 2010, v. 247, n. 3, p. 617, doi. 10.1002/pssb.200983055
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Fermi surface properties of YbCu<sub>2</sub>Si<sub>2</sub>.
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- Physica Status Solidi (B), 2010, v. 247, n. 3, p. 757, doi. 10.1002/pssb.200983027
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Systemic and myelotoxic effects of single administration of 2,3,7,8-tetrabromodibenzo- p-dioxin in rats.
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- Environmental Health & Preventive Medicine, 2006, v. 11, n. 3, p. 136, doi. 10.1265/ehpm.11.136
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Analysis of anisotropic diamagnetic susceptibility of a bull sperm.
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- Bioelectromagnetics, 2003, v. 24, n. 5, p. 347, doi. 10.1002/bem.10109
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Orientation of bull sperms in static magnetic fields.
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- Bioelectromagnetics, 2001, v. 22, n. 1, p. 60, doi. 10.1002/1521-186X(200101)22:1<60::AID-BEM7>3.0.CO;2-A
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Orientation of glutaraldehyde-fixed erythrocytes in strong static magnetic fields.
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- Bioelectromagnetics, 1996, v. 17, n. 4, p. 335, doi. 10.1002/(SICI)1521-186X(1996)17:4<335::AID-BEM10>3.0.CO;2-N
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