Found: 31
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The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE.
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- Optica Applicata, 2020, v. 50, n. 2, p. 251, doi. 10.37190/oa200208
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- Article
Technology and properties of low-pressure metalorganic vapour phase epitaxy grown InGaAs/AlInAs superlattice for quantum cascade laser applications.
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- Optica Applicata, 2016, v. 46, n. 2, p. 241, doi. 10.5277/oa160208
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- Article
Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures.
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- Optica Applicata, 2016, v. 46, n. 2, p. 255, doi. 10.5277/oa160210
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- Article
Influence of A1N spacer on the properties of A1GaN/A1N/GaN heterostructures.
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- Optica Applicata, 2013, v. 43, n. 1, p. 61, doi. 10.5277/oa130108
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- Article
Influence of RF ICP PECVD process parameters of diamond-like carbon films on DC bias and optical emission spectra.
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- Optica Applicata, 2013, v. 43, n. 1, p. 109, doi. 10.5277/oa130114
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- Article
Application of AFM technique for creation of patterns in nanoscale.
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- Optica Applicata, 2011, v. 41, n. 2, p. 307
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- Article
Characterization of A<sup>III</sup> B<sup>V</sup> epitaxial layers by scanning spreading resistance microscopy.
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- Optica Applicata, 2011, v. 41, n. 2, p. 281
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- Article
New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors.
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- Optica Applicata, 2009, v. 39, n. 4, p. 739
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- Article
Surface photocurrent nonuniformities in MSM detectors fabricated in gallium nitride heteroepitaxial layers.
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- Optica Applicata, 2009, v. 39, n. 4, p. 723
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- Article
Properties of AlN<sub>x</sub> thin films prepared by DC reactive magnetron sputtering.
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- Optica Applicata, 2009, v. 39, n. 4, p. 717
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- Article
Application of nanoscratching in electronic devices.
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- Optica Applicata, 2009, v. 39, n. 4, p. 711
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- Article
Effect of annealing temperature on the morphology of ohmic contact Ti/Al/Ni/Au to n-AlGaN/GaN heterostructures.
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- Optica Applicata, 2009, v. 39, n. 4, p. 673
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- Article
Low resistance ohmic contacts to n-GaAs for application in GaAs/AlGaAs quantum cascade lasers.
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- Optica Applicata, 2009, v. 39, n. 4, p. 655
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- Article
Parameters comparison of p-i-n and quantum well solar cells.
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- Optica Applicata, 2007, v. 37, n. 4, p. 371
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- Article
Solar cells conversion efficiency enhancement techniques.
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- Optica Applicata, 2007, v. 37, n. 1/2, p. 93
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- Article
A<sup>III</sup>-B<sup>V</sup>(N) photodetectors with functionally graded active area.
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- Optica Applicata, 2007, v. 37, n. 1/2, p. 161
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- Article
Applications of functionally graded materials in optoelectronic devices.
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- Optica Applicata, 2005, v. 35, n. 3, p. 663
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- Article
AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region.
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- Optica Applicata, 2005, v. 35, n. 3, p. 645
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- Article
Influence of materials grain structure on the performance of optoelectronic devices.
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- Optica Applicata, 2005, v. 35, n. 3, p. 549
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- Article
Photoreflectance spectroscopy of thick GaN layers grown by hydride vapour phase epitaxy technique.
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- Optica Applicata, 2005, v. 35, n. 3, p. 529
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- Article
Thermoreflectance and micro-Raman measurements of the temperature distributions in broad contact laser diodes.
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- Optica Applicata, 2005, v. 35, n. 3, p. 479
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- Article
Editorial.
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- 2005
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- Publication type:
- Editorial
A cross-sectional scanning capacitance microscopy characterization of GaAs based solar cell structures.
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- Crystal Research & Technology, 2017, v. 52, n. 6, p. n/a, doi. 10.1002/crat.201700019
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- Article
Theoretical stress calculations in polar, semipolar and nonpolar AlGaN/GaN heterostructures of different compositions.
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- Crystal Research & Technology, 2016, v. 51, n. 5, p. 349, doi. 10.1002/crat.201600018
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- Article
Zintegrowany układ oświetlenia próbki do mikroskopu ze skanującą sondą.
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- Przegląd Elektrotechniczny, 2018, v. 94, n. 8, p. 21, doi. 10.15199/48.2018.08.06
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- Article
Badanie elektrycznych właściwości powierzchni heterostruktur AlGaN/GaN/Si techniką skaningowej mikroskopii pojemnościowej.
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- Przegląd Elektrotechniczny, 2017, v. 93, n. 8, p. 58, doi. 10.15199/48.2017.08.15
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- Publication type:
- Article
AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell.
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- International Journal of Electronics & Telecommunications, 2014, v. 60, n. 2, p. 151, doi. 10.2478/eletel-2014-0018
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- Article
The Meyer-Neldel Rule in Conduction Mechanism of the Electrospun ZnO Nanofibers.
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- NANO, 2016, v. 11, n. 3, p. 1, doi. 10.1142/S1793292016500259
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- Article
COMPOSITION RELATED ELECTRICAL ACTIVE DEFECT STATES OF INGAAS AND GAASN.
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- Advances in Electrical & Electronic Engineering, 2017, v. 15, n. 1, p. 114, doi. 10.15598/aeee.v15i1.2023
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- Article
Heat Dissipation Schemes in A1InAs/InGaAs/InP Quantum Cascade Lasers Monitored by CCD Thermoreflectance.
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- Photonics, 2017, v. 4, n. 4, p. 47, doi. 10.3390/photonics4040047
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- Article
Electrical Conduction of a Single Electrospun ZnO Nanofiber.
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- Journal of the American Ceramic Society, 2014, v. 97, n. 4, p. 1157, doi. 10.1111/jace.12759
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- Article