Works by TARASOV, I. S.

Results: 95

ELECTRON STRUCTURE INVESTIGATIONS OF InGaP/GaAs(100) HETEROSTRUCTURES WITH InP QUANTUM DOTS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 215, doi. 10.1142/S0219581X07004468

By:

DOMASHEVSKAYA, E. P.;
TEREKHOV, V. A.;
KASHKAROV, V. M.;
YU. TURISHCHEV, S.;
MOLODTSOV, S. L.;
VYALIKH, D. V.;
ARSENTYEV, I. N.;
TARASOV, I. S.;
VINOKUROV, D. A.;
STANKEVICH, A. L.

Publication type:

Article

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 241, doi. 10.1142/S0219581X0700464X

By:

FIRSOV, D. A.;
VOROBJEV, L. E.;
BARZILOVICH, M. A.;
YU. PANEVIN, V.;
MIKHAYLOV, I. V.;
FEDOSOV, N. K.;
SHALYGIN, V. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
ZHUKOV, A. E.;
PIKHTIN, N. A.;
TARASOV, I. S.;
USTINOV, V. M.;
JULIEN, F. H.;
SEKOWSKI, M.;
HANNA, S.;
SEILMEIER, A.

Publication type:

Article

MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes.

Published in:

Semiconductors, 2001, v. 35, n. 11, p. 1324, doi. 10.1134/1.1418080

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Nikolaev, D. N.;
Stankevich, A. L.;
Lyutetskiı, A. V.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Fetisova, N. V.;
Arsent’ev, I. N.;
Tarasov, I. S.

Publication type:

Article

Threshold Characteristics of λ = 1.55μm InGaAsP/InP Heterolasers.

Published in:

Semiconductors, 2001, v. 35, n. 8, p. 962, doi. 10.1134/1.1393036

By:

Zegrya, G. G.;
Pikhtin, N. A.;
Skrynnikov, G. V.;
Slipchenko, S. O.;
Tarasov, I. S.

Publication type:

Article

Record Power Characteristics of InGaAs/AlGaAs/GaAs Heterostructure Lasers.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 365, doi. 10.1134/1.1356164

By:

Livshits, D. A.;
Egorov, A. Yu.;
Kochnev, I. V.;
Kapitonov, V. A.;
Lantratov, V. M.;
Ledentsov, N. N.;
Nalyot, T. A.;
Tarasov, I. S.

Publication type:

Article

Optical Study of InP Quantum Dots.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 235, doi. 10.1134/1.1349939

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Nikolaev, D. N.;
Sokolova, Z. N.;
Tarasov, I. S.

Publication type:

Article

On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers.

Published in:

Semiconductors, 2000, v. 34, n. 12, p. 1397, doi. 10.1134/1.1331798

By:

Leshko, A. Yu.;
Lyutetskiı, A. V.;
Pikhtin, N. A.;
Skrynnikov, G. V.;
Sokolova, Z. N.;
Tarasov, I. S.;
Fetisova, N. V.

Publication type:

Article

Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1255, doi. 10.1134/1.1325418

By:

Vavilova, L. S.;
Kapitonov, V. A.;
Murashova, A. V.;
Tarasov, I. S.

Publication type:

Article

The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1341, doi. 10.1134/1.1325436

By:

Kotel’nikov, E. Yu.;
Katsnel’son, A. A.;
Kudryashov, I. V.;
Rastegaeva, M. G.;
Richter, W.;
Evtikhiev, V. P.;
Tarasov, I. S.;
Alferov, Zh. I.

Publication type:

Article

Properties of Wide-Mesastripe InGaAsP/InP Lasers.

Published in:

Semiconductors, 2000, v. 34, n. 7, p. 853, doi. 10.1134/1.1188087

By:

Golikova, E. G.;
Kureshov, V. A.;
Leshko, A. Yu.;
Lyutetskiı, A. V.;
Pikhtin, N. A.;
Ryaboshtan, Yu. A.;
Skrynnikov, G. A.;
Tarasov, I. S.;
Alferov, Zh. I.

Publication type:

Article

Power Conversion Efficiency of Quantum Dot Laser Diodes.

Published in:

Semiconductors, 2000, v. 34, n. 5, p. 609, doi. 10.1134/1.1188038

By:

Zhukov, A. E.;
Kovsh, A. R.;
Mikhrin, S. S.;
Maleev, N. A.;
Odnoblyudov, V. A.;
Ustinov, V. M.;
Shernyakov, Yu. M.;
Kondrat’eva, E. Yu.;
Livshits, D. A.;
Tarasov, I. S.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Photoluminescent and Electroluminescent Properties of Spontaneously Forming Periodic InGaAsP Structures.

Published in:

Semiconductors, 2000, v. 34, n. 3, p. 319, doi. 10.1134/1.1187979

By:

Vavilova, L. S.;
Kapitonov, V. A.;
Livshits, D. A.;
Lyutetskiı, A. V.;
Murashova, A. V.;
Pikhtin, N. A.;
Skrynnikov, G. V.;
Tarasov, I. S.

Publication type:

Article

A Spatially Single-Mode Laser for a Range of 1.25–1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate.

Published in:

Semiconductors, 2000, v. 34, n. 1, p. 119, doi. 10.1134/1.1187954

By:

Mikhrin, S. S.;
Zhukov, A. E.;
Kovsh, A. R.;
Maleev, N. A.;
Ustinov, V. M.;
Shernyakov, Yu. M.;
Kayander, I. N.;
Kondrat’eva, E. Yu.;
Livshits, D. A.;
Tarasov, I. S.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Bimberg, D.;
Alferov, Zh. I.

Publication type:

Article

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9μm).

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1007, doi. 10.1134/1.1187826

By:

Sokolova, Z. N.;
Vinokurov, D. A.;
Tarasov, I. S.;
Gun’ko, N. A.;
Zegrya, G. G.

Publication type:

Article

Spontaneously assembling periodic composition-modulated InGaAsP structures.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1010, doi. 10.1134/1.1187827

By:

Vavilova, L. S.;
Kapitonov, V. A.;
Murashova, A. V.;
Pikhtin, N. A.;
Tarasov, I. S.;
Ipatova, I. P.;
Shchukin, V. A.;
Bert, N. A.;
Sitnikova, A. A.

Publication type:

Article

Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 788, doi. 10.1134/1.1187782

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Kovalenkov, O. V.;
Livshits, D. A.;
Sokolova, Z. N.;
Tarasov, I. S.;
Alferov, Zh. I.

Publication type:

Article

Spontaneously forming periodic composition-modulated InGaAsP structures.

Published in:

Semiconductors, 1999, v. 33, n. 5, p. 510, doi. 10.1134/1.1187719

By:

Bert, N. A.;
Vavilova, L. S.;
Ipatova, I. P.;
Kapitonov, V. A.;
Murashova, A. V.;
Pikhtin, N. A.;
Sitnikova, A. A.;
Tarasov, I. S.;
Shchukin, V. A.

Publication type:

Article

Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region.

Published in:

Semiconductors, 1998, v. 32, n. 12, p. 1323, doi. 10.1134/1.1187622

By:

Evtikhiev, V. P.;
Kudryashov, I. V.;
Kotel’nikov, E. Yu.;
Tokranov, V. E.;
Titkov, A. N.;
Tarasov, I. S.;
Alferov, Zh. I.

Publication type:

Article

Self-organizing nanoheterostructures in InGaAsP solid solutions

Published in:

Semiconductors, 1998, v. 32, n. 6, p. 590, doi. 10.1134/1.1187444

By:

Vavilova, L. S.;
Ivanova, A. V.;
Kapitonov, V. A.;
Murashova, A. V.;
Tarasov, I. S.;
Arsent'ev, I. N.;
Bert, N. A.;
Musikhin, Yu. G.;
Pikhtin, N. A.;
Faleev, N. N.

Publication type:

Article

Growth of Siberian Fir Needles and Their Structural Features in the Northeast of European Russia.

Published in:

Contemporary Problems of Ecology, 2024, v. 17, n. 7, p. 960, doi. 10.1134/S1995425524700720

By:

Gerling, N. V.;
Tarasov, S. I.

Publication type:

Article

Modeling complex plastic deformation and fracture of metals under disproportionate loading.

Published in:

Journal of Applied Mechanics & Technical Physics, 2009, v. 50, n. 5, p. 891, doi. 10.1007/s10808-009-0121-z

By:

Volkov, I. A.;
Korotkikh, Yu. G.;
Tarasov, I. S.

Publication type:

Article

Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900-920 nm).

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1370, doi. 10.1134/S1063782610100222

By:

Ladugin, M. A.;
Lyutetskiy, A. V.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Podoskin, A. A.;
Rudova, N. A.;
Slipchenko, S. O.;
Shashkin, I. S.;
Bondarev, A. D.;
Tarasov, I. S.

Publication type:

Article

The temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm).

Published in:

Semiconductors, 2010, v. 44, n. 10, p. 1365, doi. 10.1134/S1063782610100210

By:

Pikhtin, N. A.;
Slipchenko, S. O.;
Shashkin, I. S.;
Ladugin, M. A.;
Marmalyuk, A. A.;
Podoskin, A. A.;
Tarasov, I. S.

Publication type:

Article

Relaxation of crystal lattice parameters and structural ordering in InGaAs epitaxial alloys.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1106, doi. 10.1134/S1063782610080270

By:

Seredin, P. V.;
Glotov, A. V.;
Domashevskaya, E. P.;
Arsentyev, I. N.;
Vinokurov, D. A.;
Stankevich, A. L.;
Tarasov, I. S.

Publication type:

Article

Pulsed semiconductor lasers with higher optical strength of cavity output mirrors.

Published in:

Semiconductors, 2010, v. 44, n. 6, p. 789, doi. 10.1134/S1063782610060163

By:

Petrunov, A. N.;
Podoskin, A. A.;
Shashkin, I. S.;
Slipchenko, S. O.;
Pikhtin, N. A.;
Nalet, T. A.;
Fetisova, N. V.;
Vavilova, L. S.;
Lyutetskiy, A. V.;
Alekseev, P. A.;
Titkov, A. N.;
Tarasov, I. S.

Publication type:

Article

Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.

Published in:

Semiconductors, 2010, v. 44, n. 6, p. 805, doi. 10.1134/S1063782610060199

By:

Vinokurov, D. A.;
Ladugin, M. A.;
Lyutetskii, A. V.;
Marmalyuk, A. A.;
Petrunov, A. N.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Stankevich, A. L.;
Fetisova, N. V.;
Shashkin, I. S.;
Averkiev, N. S.;
Tarasov, I. S.

Publication type:

Article

Temperature delocalization of charge carriers in semiconductor lasers.

Published in:

Semiconductors, 2010, v. 44, n. 5, p. 661, doi. 10.1134/S1063782610050209

By:

Slipchenko, S. O.;
Shashkin, I. S.;
Vavilova, L. S.;
Vinokurov, D. A.;
Lyutetskiy, A. V.;
Pikhtin, N. A.;
Podoskin, A. A.;
Stankevich, A. L.;
Fetisova, N. V.;
Tarasov, I. S.

Publication type:

Article

Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 233, doi. 10.1134/S106378261002017X

By:

Vinokurov, D. A.;
Vasilyeva, V. V.;
Kapitonov, V. A.;
Lyutetskiy, A. V.;
Nikolaev, D. N.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Stankevich, A. L.;
Shamakhov, V. V.;
Fetisova, N. V.;
Tarasov, I. S.

Publication type:

Article

The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 184, doi. 10.1134/S1063782610020089

By:

Seredin, P. V.;
Glotov, A. V.;
Domashevskaya, E. P.;
Arsentyev, I. N.;
Vinokurov, D. A.;
Tarasov, I. S.;
Zhurbina, I. A.

Publication type:

Article

A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 238, doi. 10.1134/S1063782610020181

By:

Vinokurov, D. A.;
Konyaev, V. P.;
Ladugin, M. A.;
Lyutetskiy, A. V.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Petrunov, A. N.;
Pikhtin, N. A.;
Simakov, V. A.;
Slipchenko, S. O.;
Sukharev, A. V.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Dissipation loss of mid-infrared radiation in a dielectric waveguide.

Published in:

Semiconductors, 2010, v. 44, n. 2, p. 243, doi. 10.1134/S1063782610020193

By:

Averkiev, N. S.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Tarasov, I. S.

Publication type:

Article

Structural and optical properties of low-temperature hydride-MOCVD AlGaAs/GaAs(100) heterostructures based on omission solid solutions.

Published in:

Semiconductors, 2009, v. 43, n. 12, p. 1610, doi. 10.1134/S1063782609120070

By:

Seredin, P. V.;
Glotov, A. V.;
Domashevskaya, E. P.;
Arsentyev, I. N.;
Vinokurov, D. A.;
Stankevich, A. L.;
Tarasov, I. S.

Publication type:

Article

High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 12, p. 1602, doi. 10.1134/S1063782609120057

By:

Lyutetskiy, A. V.;
Pikhtin, N. A.;
Fetisova, N. V.;
Leshko, A. Yu.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Ryaboshtan, Yu. A.;
Marmalyuk, A. A.;
Tarasov, I. S.

Publication type:

Article

Quenching of lasing in high power semiconductor laser.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1369, doi. 10.1134/S1063782609100200

By:

Slipchenko, S. O.;
Vinokurov, D. A.;
Lyutetskiy, A. V.;
Pikhtin, N. A.;
Stankevich, A. L.;
Fetisova, N. V.;
Bondarev, A. D.;
Tarasov, I. S.

Publication type:

Article

Study of optical characteristics of structures with strongly strained In xGa1 − xAs quantum wells.

Published in:

Semiconductors, 2009, v. 43, n. 10, p. 1334, doi. 10.1134/S1063782609100133

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Nikolaev, D. N.;
Sokolova, Z. N.;
Stankevich, A. L.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1213, doi. 10.1134/S1063782609090206

By:

Vinokurov, D. A.;
Ladugin, M. A.;
Marmalyuk, A. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Simakov, V. A.;
Sukharev, A. V.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Phase formation under the effect of spinodal decomposition in epitaxial alloys of Ga xIn1 − xP/GaAs(100) heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 9, p. 1221, doi. 10.1134/S106378260909022X

By:

Seredin, P. V.;
Domashevskaya, E. P.;
Rudneva, Val. E.;
Rudneva, V. E.;
Gordienko, N. N.;
Glotov, A. V.;
Arsentyev, I. N.;
Vinokurov, D. A.;
Stankevich, A. L.;
Tarasov, I. S.

Publication type:

Article

Dielectric waveguide for middle and far infrared radiation.

Published in:

Semiconductors, 2009, v. 43, n. 8, p. 1036, doi. 10.1134/S1063782609080132

By:

Averkiev, N. S.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Tarasov, I. S.

Publication type:

Article

High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 519, doi. 10.1134/S1063782609040216

By:

Andreev, A. Yu.;
Zorina, S. A.;
Leshko, A. Yu.;
Lyutetskiy, A. V.;
Marmalyuk, A. A.;
Murashova, A. V.;
Nalet, T. A.;
Padalitsa, A. A.;
Pikhtin, N. A.;
Sabitov, D. R.;
Simakov, V. A.;
Slipchenko, S. O.;
Telegin, K. Yu.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm.

Published in:

Semiconductors, 2009, v. 43, n. 4, p. 532, doi. 10.1134/S1063782609040241

By:

Aluev, A. V.;
Leshko, A. Yu.;
Lyutetskiy, A. V.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Fetisova, N. V.;
Chelny, A. A.;
Shamakhov, V. V.;
Simakov, V. A.;
Tarasov, I. S.

Publication type:

Article

Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures.

Published in:

Semiconductors, 2009, v. 43, n. 1, p. 112, doi. 10.1134/S1063782609010229

By:

Slipchenko, S. O.;
Bondarev, A. D.;
Vinokurov, D. A.;
Nikolaev, D. N.;
Fetisova, N. V.;
Sokolova, Z. N.;
Pikhtin, N. A.;
Tarasov, I. S.

Publication type:

Article

Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1055, doi. 10.1134/S1063782608090108

By:

Seredin, P. V.;
Domashevskaya, É. P.;
Lukin, A. N.;
Arsent'ev, I. N.;
Vinokurov, D. A.;
Tarasov, I. S.

Publication type:

Article

Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/Ga x In1 − x As y P1 − y /GaInP/GaAs(001) heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 9, p. 1069, doi. 10.1134/S1063782608090121

By:

Domashevskaya, E. P.;
Gordienko, N. N.;
Rumyantseva, N. A.;
Agapov, B. L.;
Seredin, P. V.;
Bityutskaya, L. A.;
Arsent'ev, I. N.;
Vavilova, L. S.;
Tarasov, I. S.

Publication type:

Article

Properties of barrier contacts with nanosize TiB x layers to InP.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 777, doi. 10.1134/S1063782608070051

By:

Arsentyev, I. N.;
Bobyl, A. V.;
Tarasov, I. S.;
Boltovets, N. S.;
Ivanov, V. N.;
Belyaev, A. E.;
Kamalov, A. B.;
Konakova, R. V.;
Kudryk, Ya. Ya.;
Lytvyn, O. S.;
Milenin, V. V.;
Russu, E. V.

Publication type:

Article

High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 862, doi. 10.1134/S106378260807018X

By:

Murashova, A. V.;
Vinokurov, D. A.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Shamakhov, V. V.;
Vasilyeva, V. V.;
Kapitonov, V. A.;
Leshko, A. Yu.;
Lyutetskiy, A. V.;
Nalet, T. A.;
Nikolaev, D. N.;
Stankevich, A. L.;
Fetisova, N. V.;
Tarasov, I. S.;
Kim, Y. S.;
Kang, D. H.;
Lee, C. Y.

Publication type:

Article

Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 737, doi. 10.1134/S1063782608060171

By:

Vorob'ev, L. E.;
Zerova, V. L.;
Borshchev, K. S.;
Sokolova, Z. N.;
Tarasov, I. S.;
Belenky, G.

Publication type:

Article

High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 350, doi. 10.1007/s11453-008-3020-7

By:

Bezotosnyĭ, V. V.;
Vasil’eva, V. V.;
Vinokurov, D. A.;
Kapitonov, V. A.;
Krokhin, O. N.;
Leshko, A. Yu.;
Lyutetskiĭ, A. V.;
Murashova, A. V.;
Nalet, T. A.;
Nikolaev, D. N.;
Pikhtin, N. A.;
Popov, Yu. M.;
Slipchenko, S. O.;
Stankevich, A. L.;
Fetisova, N. V.;
Shamakhov, V. V.;
Tarasov, I. S.

Publication type:

Article

Double-band generation in quantum-well semiconductor laser at high injection levels.

Published in:

Semiconductors, 2007, v. 41, n. 10, p. 1230, doi. 10.1134/S1063782607100193

By:

Vinokurov, D. A.;
Zorina, S. A.;
Kapitonov, V. A.;
Leshko, A. Yu.;
Lyutetskiǐ;, A. V.;
Nalet, T. A.;
Nikolaev, D. N.;
Pikhtin, N. A.;
Rudova, N. A.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Stankevich, A. L.;
Fetisova, N. V.;
Khomylev, M. A.;
Shamakhov, V. V.;
Borshchev, K. S.;
Arsent'ev, I. N.;
Bondarev, A. D.;
Trukan, M. K.;
Tarasov, I. S.

Publication type:

Article

Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation.

Published in:

Semiconductors, 2007, v. 41, n. 8, p. 984, doi. 10.1134/S1063782607080234

By:

Vinokurov, D. A.;
Kapitonov, V. A.;
Lyutetskiĭ, A. V.;
Pikhtin, N. A.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Stankevich, A. L.;
Khomylev, M. A.;
Shamakhov, V. V.;
Borshchev, K. S.;
Arsent'ev, I. N.;
Tarasov, I. S.

Publication type:

Article

Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures.

Published in:

Semiconductors, 2007, v. 41, n. 3, p. 361, doi. 10.1134/S1063782607030220

By:

Averkiev, N. S.;
Slipchenko, S. O.;
Sokolova, Z. N.;
Pikhtin, N. A.;
Tarasov, I. S.

Publication type:

Article