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Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 15, p. 12210, doi. 10.1007/s10854-022-08181-1
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Responses of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions.
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- Journal of Radioanalytical & Nuclear Chemistry, 2011, v. 289, n. 1, p. 145, doi. 10.1007/s10967-011-1041-y
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- Article
COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS' PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION.
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- Surface Review & Letters, 2017, v. 24, n. 4, p. -1, doi. 10.1142/S0218625X17500470
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- Article