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Nanostructures in silicon carbide crystals and films.
Published in:
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 13, p. -1, doi. 10.1142/S0217979216420194
By:
- Vlaskina, S. I.;
- Kruchinin, S. P.;
- Kuznetsova, E. Ya.;
- Rodionov, V. E.;
- Mishinova, G. N.;
- Svechnikov, G. S.
Publication type:
Article
Characterization of nano-bio silicon carbide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 4, p. 346, doi. 10.15407/spqeo23.04.346
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Shaginyan, I. L.;
- Smertenko, P. S.;
- Svechnikov, G. S.
Publication type:
Article
Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 3, p. 263, doi. 10.15407/spqeo21.02.263
By:
- Tatyanenko, N. P.;
- Roshchina, N. N.;
- Gromashevskii, V. L.;
- Svechnikov, G. S.;
- Zavyalova, L. V.;
- Snopok, B. A.
Publication type:
Article
Nanograin boundaries and silicon carbide photoluminescence.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 344, doi. 10.15407/spqeo20.03.344
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
Nanocrystalline silicon carbide films for solar cells.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 3, p. 273, doi. 10.15407/spqeo19.03.273
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
New method for estimating the refractive index of optical materials in spectrally selective elements.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 2, p. 169, doi. 10.15407/spqeo19.02.169
By:
- Manko, A. A.;
- Svechnikov, G. S.
Publication type:
Article
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 1, p. 62, doi. 10.15407/spqeo19.01.062
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 448, doi. 10.15407/spqeo18.04.448
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 2, p. 209, doi. 10.15407/spqeo18.02.209
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 380
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
Nanostructures in lightly doped silicon carbide crystals with polytypic defects.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 155
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, L. V.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 273
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
Silicon carbide phase transition in as-grown 3C-6H polytypes junction.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 2, p. 132
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Svechnikov, G. S.;
- Rodionov, V. E.;
- Lee, S. W.
Publication type:
Article
Investigation of luminescent properties inherent to SrTiO3:Pr 3+ luminophor with Al impurity.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 461
By:
- Marchylo, O. M.;
- Zavyalova, L. V.;
- Nakanishi, Y.;
- Kominami, H.;
- Belyaev, A. E.;
- Svechnikov, G. S.
Publication type:
Article
3C-6H transformation in heated cubic silicon carbide 3C-SiC.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 432
By:
- Vlaskina, S. I.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
An intrinsic physical content of "single photon power" -- (hv⋅Δv).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 12
By:
- Salkov, E. A.;
- Svechnikov, G. S.
Publication type:
Article
Synthesis and luminescent properties of SrTiO3:Pr3+ phosphors prepared by sol-gel method.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 4, p. 321
By:
- Marchylo, O. M.;
- Zavjalova, L. V.;
- Nakanishi, Y.;
- Kominami, H.;
- Hara, K.;
- Belyaev, A. E.;
- Svechnikov, G. S.;
- Fenenko, L. I.;
- Poludin, V. I.
Publication type:
Article
Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2009, v. 12, n. 2, p. 116
By:
- Morozovska, A. N.;
- Svechnikov, G. S.;
- Shishkin, E. I.;
- Shur, V. Y.
Publication type:
Article
Polar properties and local piezoelectric response of ferroelectric nanotubes.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 370, doi. 10.15407/spqeo11.04.370
By:
- Morozovska, A. N.;
- Svechnikov, G. S.;
- Shishkin, E. I.;
- Shur, V. Y.
Publication type:
Article
Information capability of the thermal radiation noise (Analytical overview).
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 1, p. 79, doi. 10.15407/spqeo11.01.079
By:
- Salkov, E. A.;
- Svechnikov, G. S.
Publication type:
Article
Boron, aluminum, nitrogen, and oxygen impurities in silicon carbide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 21, doi. 10.15407/spqeo10.02.021
By:
- Vlaskina, S. I.;
- Vlaskin, V. I.;
- Podlasov, S. A.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
Flexible electroluminescent panels.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 2, p. 16, doi. 10.15407/spqeo10.02.016
By:
- V. I. Vlaskin;
- Vlaskina, S. I.;
- Koval, O. Yu.;
- Rodionov, V. E.;
- Svechnikov, G. S.
Publication type:
Article
A priori probabilistic model for the reliability of an "organised structure".
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 3, p. 100
By:
- Sal'kov, E. A.;
- Svechnikov, G. S.
Publication type:
Article
Some properties of extremely restricted thermal radiation beams.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2003, v. 6, n. 3, p. 386, doi. 10.15407/spqeo6.03.386
By:
- Salkov, E. A.;
- Svechnikov, G. S.
Publication type:
Article
Samarium Dithiocarbamates as Precursors for Deposition of SmS Films.
Published in:
Russian Journal of General Chemistry, 2003, v. 73, n. 4, p. 560, doi. 10.1023/A:1025636419163
By:
- Domrachev, G. A.;
- Zav'yalova, L. V.;
- Svechnikov, G. S.;
- Suvorova, O. N.;
- Khanova, A. V.;
- Shchupak, E. A.;
- Yarosh, L. A.
Publication type:
Article
Nano Silicon Carbide’s Stacking Faults, Deep Level’s and Grain Boundary’s Defects.
Published in:
Journal of Nano- & Electronic Physics, 2018, v. 10, n. 5, p. 1, doi. 10.21272/jnep.10(5).05021
By:
- Vlaskina, S. I.;
- Svechnikov, G. S.;
- Mishinova, G. N.;
- Vlaskin, V. I.;
- Rodionov, V. E.;
- Lytvynenko, V. V.
Publication type:
Article
Chemically Produced ZnS : Cu Films: Structure, Properties, and Mechanism of Electroluminescence.
Published in:
Technical Physics, 2002, v. 47, n. 8, p. 978, doi. 10.1134/1.1501676
By:
- Khomchenko, V. S.;
- Zavyalova, L. V.;
- Roshchina, N. N.;
- Svechnikov, G. S.;
- Prokopenko, I. V.;
- Rodionov, V. E.;
- Lytvyn, P. M.;
- Lytvyn, O. S.;
- Tsyrkunov, Yu. A.
Publication type:
Article
Phonon Coupling and Ferroelectric Phase Transition in Mixed As0.1Sb0.9SI Crystals.
Published in:
Physica Status Solidi (B), 1980, v. 100, n. 2, p. 659, doi. 10.1002/pssb.2221000233
By:
- Valakh, M. Ya.;
- Veshka, Y. A.;
- Lisitsa, M. P.;
- Svechnikov, G. S.;
- Pinzenik, V. P.
Publication type:
Article
Vibrational Spectra of Sb2O3 and Sb8O11 I2 Crystals.
Published in:
Physica Status Solidi (B), 1980, v. 99, n. 2, p. K145, doi. 10.1002/pssb.2220990254
By:
- Valakh, M. Ya.;
- Veshka, Ya.;
- Svechnikov, G. S.;
- Kutsenko, Ya. P.
Publication type:
Article

Found: 29

Nanostructures in silicon carbide crystals and films.

Characterization of nano-bio silicon carbide.

Semiconductor surface spectroscopy using transverse acousto-electric effect: Role of surface charge in photo-processes at the ZnS/Si interface.

Nanograin boundaries and silicon carbide photoluminescence.

Nanocrystalline silicon carbide films for solar cells.

New method for estimating the refractive index of optical materials in spectrally selective elements.

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations.

External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals.

Structure of photoluminescence DL-spectra and phase transformation in lightly doped SiC crystals and films.

Peculiarities of phase transformations in SiC crystals and thin films with in-grown original defects.

Nanostructures in lightly doped silicon carbide crystals with polytypic defects.

8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions.

Silicon carbide phase transition in as-grown 3C-6H polytypes junction.

Investigation of luminescent properties inherent to SrTiO<sub>3</sub>:Pr <sup>3+</sup> luminophor with Al impurity.

3C-6H transformation in heated cubic silicon carbide 3C-SiC.

An intrinsic physical content of "single photon power" -- (hv⋅Δv).

Synthesis and luminescent properties of SrTiO<sub>3</sub>:Pr<sup>3+</sup> phosphors prepared by sol-gel method.

Domain structure formation by using Scanning Probe Microscopy: equilibrium polarization distribution and effective piezoelectric response calculations.

Polar properties and local piezoelectric response of ferroelectric nanotubes.

Information capability of the thermal radiation noise (Analytical overview).

Boron, aluminum, nitrogen, and oxygen impurities in silicon carbide.

Flexible electroluminescent panels.

A priori probabilistic model for the reliability of an "organised structure".

Some properties of extremely restricted thermal radiation beams.

Samarium Dithiocarbamates as Precursors for Deposition of SmS Films.

Nano Silicon Carbide’s Stacking Faults, Deep Level’s and Grain Boundary’s Defects.

Chemically Produced ZnS : Cu Films: Structure, Properties, and Mechanism of Electroluminescence.

Phonon Coupling and Ferroelectric Phase Transition in Mixed As<sub>0.1</sub>Sb<sub>0.9</sub>SI Crystals.

Vibrational Spectra of Sb<sub>2</sub>O<sub>3</sub> and Sb<sub>8</sub>O<sub>11</sub> I<sub>2</sub> Crystals.