Found: 4
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Silicon LEDs with room-temperature dislocation-related luminescence, fabricated by erbium ion implantation and chemical-vapor deposition of polycrystalline silicon layers heavily doped with boron and phosphorus.
- Published in:
- Semiconductors, 2007, v. 41, n. 5, p. 616, doi. 10.1134/S1063782607050247
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- Article
Silicon Photodiodes as Thomson Scattering Detectors in Experiments on the Tuman-3M Tokamak and in Bench Experiments.
- Published in:
- Technical Physics, 2003, v. 48, n. 8, p. 1053, doi. 10.1134/1.1607480
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- Article
Isotope-Pure [sup 28]Si Layers Grown by VPE.
- Published in:
- Semiconductors, 2002, v. 36, n. 12, p. 1398, doi. 10.1134/1.1529252
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- Publication type:
- Article
A microfluidic chip analyzer for determining neurotransmitters.
- Published in:
- Journal of Analytical Chemistry, 2013, v. 68, n. 12, p. 1093, doi. 10.1134/S1061934813120083
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- Article