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Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells.
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- Materials (1996-1944), 2022, v. 15, n. 11, p. 3998, doi. 10.3390/ma15113998
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N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation.
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- Materials (1996-1944), 2022, v. 15, n. 9, p. 3005, doi. 10.3390/ma15093005
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- Article