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Endurance-write-speed tradeoffs in nonvolatile memories.
- Published in:
- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 4, p. 1, doi. 10.1007/s00339-016-9841-0
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- Publication type:
- Article
The effect of Ti and O ion implantation on the resistive switching in Pt/TiO/Pt devices.
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- Applied Physics A: Materials Science & Processing, 2015, v. 120, n. 4, p. 1599, doi. 10.1007/s00339-015-9368-9
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- Article
Utilizing NDR effect to reduce switching threshold variations in memristive devices.
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- Applied Physics A: Materials Science & Processing, 2013, v. 111, n. 1, p. 199, doi. 10.1007/s00339-013-7550-5
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- Article
Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal-oxide-metal memristors.
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- Applied Physics A: Materials Science & Processing, 2012, v. 107, n. 3, p. 509, doi. 10.1007/s00339-012-6902-x
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- Article
Intrinsic constrains on thermally-assisted memristive switching.
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- Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 851, doi. 10.1007/s00339-011-6269-4
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- Publication type:
- Article
An ionic bottle for high-speed, long-retention memristive devices.
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- Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 1033, doi. 10.1007/s00339-011-6321-4
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- Article
Donor-Induced Performance Tuning of Amorphous SrTiO<sub>3</sub> Memristive Nanodevices: Multistate Resistive Switching and Mechanical Tunability.
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- Advanced Functional Materials, 2015, v. 25, n. 21, p. 3172, doi. 10.1002/adfm.201501019
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- Article
Nanoscale Resistive Switching in Amorphous Perovskite Oxide ( a-SrTiO<sub>3</sub>) Memristors.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 43, p. 6741, doi. 10.1002/adfm.201401278
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- Publication type:
- Article
Memristors: Nanoscale Resistive Switching in Amorphous Perovskite Oxide ( a-SrTiO<sub>3</sub>) Memristors (Adv. Funct. Mater. 43/2014).
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 43, p. 6733, doi. 10.1002/adfm.201470279
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- Article
Rainer Waser – A Pioneer of Fundamentals of Resistive Switching Memories.
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- Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202200765
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- Article
Exponential ionic drift: fast switching and low volatility of thin-film memristors.
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- Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 3, p. 515, doi. 10.1007/s00339-008-4975-3
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- Publication type:
- Article
Modeling and Experimental Demonstration of a Hopfield Network Analog-to-Digital Converter with Hybrid CMOS/Memristor Circuits.
- Published in:
- Frontiers in Neuroscience, 2015, p. 1, doi. 10.3389/fnins.2015.00488
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- Article
Pattern classification by memristive crossbar circuits using ex situ and in situ training.
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- Nature Communications, 2013, v. 4, n. 6, p. 2072, doi. 10.1038/ncomms3072
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- Article
Nanotechnology: Smart connections.
- Published in:
- 2011
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- Publication type:
- Opinion
Capacity, Fidelity, and Noise Tolerance of Associative Spatial-Temporal Memories Based on Memristive Neuromorphic Networks.
- Published in:
- Frontiers in Neuroscience, 2018, p. 1, doi. 10.3389/fnins.2018.00195
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- Publication type:
- Article
Publisher Correction: Stateful characterization of resistive switching TiO<sub>2</sub> with electron beam induced currents.
- Published in:
- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-02844-6
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- Publication type:
- Article
Stateful characterization of resistive switching TiO<sub>2</sub> with electron beam induced currents.
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- Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-02116-9
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- Publication type:
- Article
Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability.
- Published in:
- Nature Communications, 2017, v. 8, n. 1, p. 1, doi. 10.1038/s41467-017-00803-1
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- Publication type:
- Article
Corrigendum: Resistive switching and its suppression in Pt/Nb:SrTiO<sub>3</sub> junctions.
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- Nature Communications, 2015, v. 6, n. 12, p. 10128, doi. 10.1038/ncomms10128
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- Publication type:
- Article
Resistive switching and its suppression in Pt/Nb:SrTiO<sub>3</sub> junctions.
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- Nature Communications, 2014, v. 5, n. 6, p. 3990, doi. 10.1038/ncomms4990
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- Article
Back Cover: Correlation between diode polarization and resistive switching polarity in Pt/TiO<sub>2</sub>/Pt memristive device (Phys. Status Solidi RRL 5/2016).
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 5, p. n/a, doi. 10.1002/pssr.201670731
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- Publication type:
- Article
Correlation between diode polarization and resistive switching polarity in Pt/TiO<sub>2</sub>/Pt memristive device.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 5, p. 426, doi. 10.1002/pssr.201600044
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- Publication type:
- Article
Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior.
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- Small, 2009, v. 5, n. 9, p. 1058, doi. 10.1002/smll.200801323
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- Article
Memristive devices for computing.
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- Nature Nanotechnology, 2013, v. 8, n. 1, p. 13, doi. 10.1038/nnano.2012.240
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- Article
The missing memristor found.
- Published in:
- 2009
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- Correction notice
The missing memristor found.
- Published in:
- Nature, 2008, v. 453, n. 7191, p. 80, doi. 10.1038/nature06932
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- Publication type:
- Article
Computing high-degree polynomial gradients in memory.
- Published in:
- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-52488-y
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- Publication type:
- Article
Optimized stateful material implication logic for three-dimensional data manipulation.
- Published in:
- Nano Research, 2016, v. 9, n. 12, p. 3914, doi. 10.1007/s12274-016-1260-1
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- Publication type:
- Article