Found: 20
Select item for more details and to access through your institution.
Nanostructured SiC as a promising material for the cold electron emitters.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 4, p. 355, doi. 10.15407/spqeo24.04.355
- By:
- Publication type:
- Article
2D semiconductor structures as a basis for new high-tech devices (Review).
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 4, p. 380, doi. 10.15407/spqeo21.04.380
- By:
- Publication type:
- Article
100 YEARS OF SEMICONDUCTOR SCIENCE: THE UKRAINIAN CONTRIBUTION.
- Published in:
- Europhysics News, 2014, v. 45, n. 1, p. 15, doi. 10.1051/epn/2014101
- By:
- Publication type:
- Article
Antihysteresis of the electrical resistivity of graphene on a ferroelectric Pb(ZrTi)O substrate.
- Published in:
- Journal of Experimental & Theoretical Physics, 2013, v. 116, n. 1, p. 112, doi. 10.1134/S106377611301007X
- By:
- Publication type:
- Article
Evidence of the third ( A) level of the mercury vacancy in CdHgTe.
- Published in:
- Semiconductors, 2012, v. 46, n. 7, p. 882, doi. 10.1134/S1063782612070093
- By:
- Publication type:
- Article
Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(ZrTi)O ferroelectric substrate.
- Published in:
- JETP Letters, 2012, v. 95, n. 4, p. 198, doi. 10.1134/S002136401204008X
- By:
- Publication type:
- Article
Modulation of mid-IR radiation by a gated graphene on ferroelectric substrate.
- Published in:
- Ukrainian Journal of Physical Optics, 2011, v. 12, n. 4, p. 161, doi. 10.3116/16091833/12/4/161/2011
- By:
- Publication type:
- Article
Low-temperature anomalies of the photoelectromagnetic effect in p-Cd<sub> x </sub>Hg<sub>1 − x </sub>Te due to recharging of surface states.
- Published in:
- Semiconductors, 2008, v. 42, n. 4, p. 422, doi. 10.1134/S106378260804009X
- By:
- Publication type:
- Article
Modification of localized and resonant states at asymmetric short-range defects under hydrostatic compression.
- Published in:
- Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 3, p. 562, doi. 10.1134/S1063776108030151
- By:
- Publication type:
- Article
The band structure and the double metal-insulator-metal phase transition in the conductivity of elastically strained zero-gap Cd<sub> x </sub>Hg<sub>1− x </sub>Te.
- Published in:
- Semiconductors, 2007, v. 41, n. 3, p. 266, doi. 10.1134/S1063782607030049
- By:
- Publication type:
- Article
Increase in Quantum Efficiency of IR Emission in Elastically Strained Narrow-Gap Semiconductors.
- Published in:
- Semiconductors, 2002, v. 36, n. 4, p. 404, doi. 10.1134/1.1469188
- By:
- Publication type:
- Article
Elastic State of Stress in Narrow-Gap Semiconductors: A Fundamental Possibility to Increase the Quantum Yield of Infrared Radiation.
- Published in:
- JETP Letters, 2001, v. 73, n. 9, p. 495, doi. 10.1134/1.1385666
- By:
- Publication type:
- Article
Special Features of Photoelectric Properties of p-Cd[sub x]Hg[sub 1 – ][sub x]Te Crystals at Low Temperatures: The Effects of the Freezing-Out of Holes and Elastic Stress.
- Published in:
- Semiconductors, 2000, v. 34, n. 10, p. 1137, doi. 10.1134/1.1317571
- By:
- Publication type:
- Article
Far Infrared Stimulated and Spontaneous Radiation in Uniaxially Deformed Zero-Gap Hg[sub 1 – ][sub x]Cd[sub x]Te.
- Published in:
- Semiconductors, 2000, v. 34, n. 7, p. 763, doi. 10.1134/1.1188069
- By:
- Publication type:
- Article
Low-temperature anomalies exhibited by the photoelectromagnetic effect in p-type CdxHg1-xTe.
- Published in:
- Semiconductors, 1999, v. 33, n. 5, p. 536, doi. 10.1134/1.1187902
- By:
- Publication type:
- Article
Impurity States and Optical Transitions in Uniaxially Deformed Narrow-Gap Semiconductors.
- Published in:
- Physica Status Solidi (B), 1994, v. 181, n. 2, p. 447, doi. 10.1002/pssb.2221810220
- By:
- Publication type:
- Article
Hydrostatic Pressure Effect on Point Defect Electronic States in Narrow-Gap and Gapless Semiconductors.
- Published in:
- Physica Status Solidi (B), 1994, v. 181, n. 1, p. 181, doi. 10.1002/pssb.2221810118
- By:
- Publication type:
- Article
Nonequilibrium Carrier Recombination Channels in Uniaxially Stressed Gapless Semiconductors.
- Published in:
- Physica Status Solidi (B), 1991, v. 164, n. 1, p. 157, doi. 10.1002/pssb.2221640116
- By:
- Publication type:
- Article
Auger Recombination via Defects in Tellurium.
- Published in:
- Physica Status Solidi (B), 1990, v. 162, n. 2, p. 531, doi. 10.1002/pssb.2221620225
- By:
- Publication type:
- Article
Auger Recombination of Electrons via Deep and Shallow Acceptors.
- Published in:
- Physica Status Solidi (B), 1985, v. 132, n. 1, p. 203, doi. 10.1002/pssb.2221320121
- By:
- Publication type:
- Article