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A study of the effect of electron and proton irradiation on 4 H-SiC device structures.
- Published in:
- Technical Physics Letters, 2017, v. 43, n. 11, p. 1027, doi. 10.1134/S1063785017110256
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- Article
Investigation of the p[sup –]-3C-SiC/n[sup +]-6H-SiC Heterostructures with Modulated Doping.
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- Technical Physics Letters, 2002, v. 28, n. 12, p. 1011, doi. 10.1134/1.1535487
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- Article
Electrical Characteristics of (p)3C-SiC–(n)6H-SiC Heterojunctions.
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- Technical Physics Letters, 2002, v. 28, n. 9, p. 792, doi. 10.1134/1.1511788
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- Article
SERS spectroscopy of nanocomposite porous films containing silver nanoparticles.
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- Optics & Spectroscopy, 2015, v. 118, n. 2, p. 294, doi. 10.1134/S0030400X15020071
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- Article
Field emission properties of pointed cathodes based on graphene films on SiC.
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- Journal of Superhard Materials, 2016, v. 38, n. 4, p. 235, doi. 10.3103/S1063457616040031
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- Article
Studies of the ceramic material produced by pressureless sintering from the AlN-YO-(Si-C) powder composition using electron microscopy, Raman spectroscopy and measurements of the thermal conductivity and microwave radiation.
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- Journal of Superhard Materials, 2015, v. 37, n. 2, p. 73, doi. 10.3103/S1063457615020021
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- Article
Structure and hardness of octahedral natural diamond single crystals depending on the HPHT treatment conditions.
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- Journal of Superhard Materials, 2012, v. 34, n. 3, p. 166, doi. 10.3103/S1063457612030033
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- Article
The energy intensity analysis of the diamond-spark grinding of the WolKar nanostructural hard alloy.
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- Journal of Superhard Materials, 2010, v. 32, n. 1, p. 50, doi. 10.3103/S1063457610010077
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- Article
Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes.
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- Technical Physics, 2020, v. 65, n. 2, p. 250, doi. 10.1134/S1063784220020139
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- Article
Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide.
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- Materials (1996-1944), 2022, v. 15, n. 23, p. 8637, doi. 10.3390/ma15238637
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- Article
Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2022, v. 16, n. 3, p. 374, doi. 10.1134/S1027451022030260
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- Article
Effect of the energy of bombarding electrons on the conductivity of n-4 H-SiC (CVD) epitaxial layers.
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- Semiconductors, 2017, v. 51, n. 3, p. 299, doi. 10.1134/S1063782617030137
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- Article
Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties.
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- Semiconductors, 2016, v. 50, n. 2, p. 249, doi. 10.1134/S1063782616020111
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- Article
Radiation hardness of n-GaN schottky diodes.
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- Semiconductors, 2015, v. 49, n. 10, p. 1341, doi. 10.1134/S1063782615100127
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- Article
Optical and electrical properties of 4 H-SiC irradiated with Xe ions.
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- Semiconductors, 2014, v. 48, n. 2, p. 156, doi. 10.1134/S1063782614020146
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- Article
Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation.
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- Semiconductors, 2011, v. 45, n. 5, p. 623, doi. 10.1134/S1063782611050186
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- Article
Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates.
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- Semiconductors, 2010, v. 44, n. 10, p. 1389, doi. 10.1134/S106378261010026X
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- Article
A high-temperature radiation-resistant rectifier based on p<sup>+</sup>-n junctions in 4H-SiC ion-implanted with aluminum.
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- Semiconductors, 2010, v. 44, n. 6, p. 778, doi. 10.1134/S1063782610060151
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- Article
Lateral ordering of quantum dots and wires in the (In,Ga)As/GaAs(100) multilayer structures.
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- Semiconductors, 2007, v. 41, n. 1, p. 73, doi. 10.1134/S1063782607010150
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- Article
A study of n <sup>+</sup>-6 H/ n-3 C/ p <sup>+</sup>-6 H-SiC heterostructures grown by sublimation epitaxy.
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- Semiconductors, 2006, v. 40, n. 12, p. 1398, doi. 10.1134/S1063782606120050
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- Article
Electrical Properties of n-GaN/p-SiC Heterojunctions.
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- Semiconductors, 2005, v. 39, n. 12, p. 1403, doi. 10.1134/1.2140313
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- Article
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions.
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- Semiconductors, 2004, v. 38, n. 10, p. 1187, doi. 10.1134/1.1808826
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- Article
Effect of Irradiation with Fast Neutrons on Electrical Characteristics of Devices Based on CVD 4H-SiC Epitaxial Layers.
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- Semiconductors, 2003, v. 37, n. 10, p. 1229, doi. 10.1134/1.1619523
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- Article
3C-SiC p–n Structures Grown by Sublimation on 6H-SiC Substrates.
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- Semiconductors, 2003, v. 37, n. 4, p. 482, doi. 10.1134/1.1568473
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- Article
Silicon Carbide Transistor Structures as Detectors of Weakly Ionizing Radiation.
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- Semiconductors, 2003, v. 37, n. 1, p. 65, doi. 10.1134/1.1538541
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- Article
Radiation Hardness of Wide-Gap Semiconductors (using the Example of Silicon Carbide).
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- Semiconductors, 2002, v. 36, n. 11, p. 1270, doi. 10.1134/1.1521229
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- Article
Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons.
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- Semiconductors, 2000, v. 34, n. 9, p. 1016, doi. 10.1134/1.1309411
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- Article
Radiation Defects in n-6H-SiC Irradiated with 8 MeV Protons.
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- Semiconductors, 2000, v. 34, n. 8, p. 861, doi. 10.1134/1.1188089
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- Article
Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes.
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- Technical Physics Letters, 2020, v. 46, n. 3, p. 287, doi. 10.1134/S1063785020030244
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- Article
Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature.
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- Semiconductors, 2022, v. 56, n. 3, p. 189, doi. 10.1134/S1063782622020099
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- Article
Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.
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- 2021
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- Correction Notice
Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.
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- Semiconductors, 2020, v. 54, n. 12, p. 1624, doi. 10.1134/S1063782620120374
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- Article
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs.
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- Semiconductors, 2019, v. 53, n. 12, p. 1568, doi. 10.1134/S1063782619160140
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- Article
Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles.
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- Semiconductors, 2018, v. 52, n. 13, p. 1758, doi. 10.1134/S1063782618130171
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- Article