Works by Stepanov, V. M.

Results: 29

Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 991, doi. 10.1134/1.1187821

By:

Danilova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 924, doi. 10.1134/1.1187630

By:

Danilova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it.

Published in:

Semiconductors, 1999, v. 33, n. 7, p. 719, doi. 10.1134/1.1187768

By:

Voronina, T. I.;
Lagunova, T. S.;
Moiseev, K. D.;
Rozov, A. E.;
Sipovskaya, M. A.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 μm) due to nonlinear optical effects.

Published in:

Semiconductors, 1999, v. 33, n. 2, p. 210, doi. 10.1134/1.1187672

By:

Danilova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Scanning electron microscopy of long-wavelength laser structures.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1157

By:

Solov’ev, V. A.;
Mikhaılova, M. P.;
Moiseev, K. D.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 μm(T=77 K).

Published in:

Semiconductors, 1998, v. 32, n. 2, p. 218, doi. 10.1134/1.1187345

By:

Danilova, T. N.;
Danilova, A. P.;
Ershov, O. G.;
Imenkov, A. N.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Current tuning of the emission wavelength of low-threshold mesa stripe lasers utilizing InAsSb/InAsSbP double heterostructures and emitting in the vicinity of 3.3μm.

Published in:

Semiconductors, 1997, v. 31, n. 11, p. 1200, doi. 10.1134/1.1187294

By:

Danilova, T. N.;
Danilova, A. P.;
Ershov, O. G.;
Imenkov, A. N.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

InAsSb/InAsSbP diode lasers with separate electrical and optical confinement, emitting at 3–4 μm.

Published in:

Semiconductors, 1997, v. 31, n. 8, p. 831, doi. 10.1134/1.1187264

By:

Danilova, T. N.;
Danilova, A. P.;
Ershov, O. G.;
Imenkov, A. H.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Influence of charge carriers on tuning in InAsSb lasers.

Published in:

Semiconductors, 1997, v. 31, n. 6, p. 563, doi. 10.1134/1.1187215

By:

Danilova, T. N.;
Evseenko, O. I.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov,, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Stress-strain relationship for periodic loading.

Published in:

Journal of Applied Mechanics & Technical Physics, 2006, v. 47, n. 3, p. 384, doi. 10.1007/s10808-006-0066-4

By:

Kapustin, V. I.;
Stepanov, V. M.

Publication type:

Article

Radioactive components of scales at the inner surface of pipes in oilfields of Kazakhstan.

Published in:

Journal of Radioanalytical & Nuclear Chemistry, 2005, v. 264, n. 2, p. 413, doi. 10.1007/s10967-005-0730-9

By:

Kadyrzhanov, K. K.;
Tuleushev, A. Zh.;
Marabaev, Zh. N.;
Kazachevskiy, I. V.;
Lukashenko, S. N.;
Pekhachek, V.;
Solodukhin, V. P.;
Pikalova, L. I.;
Knyazev, B. B.;
Stepanov, V. M.;
Kabirova, G. M.;
Feofanov, V. A.

Publication type:

Article

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system.

Published in:

Semiconductors, 2007, v. 41, n. 9, p. 1005, doi. 10.1134/S1063782607090011

By:

Alekseev, A. N.;
Byrnaz, A. É;
Krasovitsky, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel’sky, Yu. V.;
Sokolov, I. A.;
Sokolov, M. A.;
Stepanov, M. V.;
Shkurko, A. P.;
Chalyi, V. P.

Publication type:

Article

Microwave Field-Effect Transistors Based on Group-III Nitrides.

Published in:

Semiconductors, 2004, v. 38, n. 10, p. 1235, doi. 10.1134/1.1808836

By:

Aleksandrov, S. B.;
Baranov, D. A.;
Kaidash, A. P.;
Krasovitskii, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel'skii, Yu. V.;
Sokolov, I. A.;
Stepanov, M. V.;
Chalyi, V. P.;
Gladysheva, N. B.;
Dorofeev, A. A.;
Matveev, Yu. A.;
Chernyavskii, A. A.

Publication type:

Article

Total impurity concentration in high-purity simple substances.

Published in:

Inorganic Materials, 2006, v. 42, n. 11, p. 1193, doi. 10.1134/S0020168506110045

By:

Stepanov, V. M.;
Bilevich, O. V.;
Kolesnikov, A. N.

Publication type:

Article

Statistical Phenomenology of the Elemental Composition of Environmental Systems.

Published in:

Inorganic Materials, 2004, v. 40, n. 2, p. 207, doi. 10.1023/B:INMA.0000016100.42347.23

By:

Stepanov, V. M.;
Suprunova, I. A.

Publication type:

Article

NEW DATA ON CARBONATE SPRINGS IN ZABAYKAL'YE.

Published in:

International Geology Review, 1963, v. 5, n. 2, p. 189, doi. 10.1080/00206816309473767

By:

Stepanov, V. M.

Publication type:

Article

A new PCR-based approach to a fast search of a wide spectrum of cry genes from Bacillus thuringiensis strains.

Published in:

IUBMB Life, 1998, v. 45, n. 6, p. 1265, doi. 10.1080/15216549800203482

By:

Shevelev, A. B.;
Lewitin, E.;
Novikova, S. I.;
Wojciechowska, Ya.A.;
Usacheva, E. A.;
Chestukhina, G. G.;
Stepanov, V. M.

Publication type:

Article

Power-Supply Systems Reliability Control.

Published in:

EAI Endorsed Transactions on the Energy Web, 2018, v. 5, n. 19, p. 1, doi. 10.4108/eai.10-7-2018.155083

By:

Shpiganovich, A. N.;
Zatsepina, V. I.;
Shpiganovich, A. A.;
Stepanov, V. M.

Publication type:

Article

GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer.

Published in:

Technical Physics Letters, 2008, v. 34, n. 9, p. 785, doi. 10.1134/S1063785008090216

By:

Alekseev, A. N.;
Byrnaz, A. É.;
Krasovitskiĭ, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel'skiĭ, Yu. V.;
Sokolov, I. A.;
Sokolov, M. A.;
Stepanov, M. V.;
Chalyĭ, V. P.;
Shkurko, A. P.

Publication type:

Article

Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates.

Published in:

Technical Physics Letters, 2008, v. 34, n. 8, p. 711, doi. 10.1134/S1063785008080269

By:

Alekseev, A. N.;
Aleksandrov, S. B.;
Byrnaz, A. É.;
Kokin, S. V.;
Krasovitskiĭ, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel’skiĭ, M. Yu.;
Pogorel’skiĭ, Yu. V.;
Sokolov, I. A.;
Sokolov, M. A.;
Stepanov, M. V.;
Tkachenko, A. G.;
Chalyĭ, V. P.;
Shkurko, A. P.

Publication type:

Article

Multilayer AlN/AlGaN/GaN/AlGaN Heterostructures with Quantum Wells for High-Power Field-Effect Transistors Grown by Ammonia MBE.

Published in:

Technical Physics Letters, 2006, v. 32, n. 11, p. 960, doi. 10.1134/S1063785006110162

By:

Alekseev, A. N.;
Aleksandrov, S. B.;
Byrnaz, A. É.;
Velikovskiĭ, L. É.;
Velikovskiĭ, I. É.;
Veretekha, A. V.;
Krasovitskiĭ, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel’skiĭ, M. Yu.;
Pogorel’skiĭ, Yu. V.;
I. A. Sokolov;
Sokolov, M. A.;
Stepanov, M. V.;
Tkachenko, A. G.;
Shkurko, A. P.;
Chalyĭ, V. P.

Publication type:

Article

Multilayer AlN/AlGaN/GaN/AlGaN Heterostructures for High-Power Field-Effect Transistors Grown by Ammonia MBE.

Published in:

Technical Physics Letters, 2005, v. 31, n. 10, p. 864, doi. 10.1134/1.2121841

By:

Alekseev, A. N.;
Aleksandrov, S. B.;
Byrnaz, A. É.;
Velikovskiĭ, L. É.;
Velikovskiĭ, I. É.;
Krasovitskiĭ, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel'skiĭ, Yu. V.;
Sokolov, I. A.;
Sokolov, M. A.;
Stepanov, M. V.;
Tkachenko, A. G.;
Shkurko, A. P.;
Chalyĭ, V. P.

Publication type:

Article

MBE of InGaN/GaN Heterostructures Using Ammonia as a Source of Nitrogen.

Published in:

Technical Physics Letters, 2004, v. 30, n. 7, p. 580, doi. 10.1134/1.1783408

By:

Petrov, S. I.;
Ka&icaron;dash, A. P.;
Krasovitski&icaron;, D. M.;
Sokolov, I. A.;
Pogorel'ski&icaron;, Yu. V.;
Chaly&icaron;, V. P.;
Shkurko, A. P.;
Stepanov, M. V.;
Pavienko, M. V.;
Baranov, D. A.

Publication type:

Article

AlGaN/GaN HEMTs Grown by Ammonia MBE.

Published in:

Technical Physics Letters, 2004, v. 30, n. 5, p. 380, doi. 10.1134/1.1760861

By:

Volkov, V. V.;
Ivanova, V. P.;
Kuz'michev, Yu. S.;
Lermontov, S. A.;
Solov'ev, Yu. V.;
Baranov, D. A.;
Ka&icaron;dash, A. P.;
Krasovitski&icaron;, D. M.;
Pavlenko, M. V.;
Petrov, S. I.;
Pogorel'ski&icaron;, Yu. V.;
Sokolov, I. A.;
Sokolov, M. A.;
Stepanov, M. V.;
Chaly&icaron;, V. P.

Publication type:

Article

InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency.

Published in:

Technical Physics Letters, 1999, v. 25, n. 10, p. 766, doi. 10.1134/1.1262628

By:

Danilova, T. N.;
Danilova, A. P.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

InAsSb light-emitting diodes for the detection of CO[sub 2](λ=4.3 μm).

Published in:

Technical Physics Letters, 1998, v. 24, n. 8, p. 596, doi. 10.1134/1.1262210

By:

Popov, A. A.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers.

Published in:

Technical Physics Letters, 1998, v. 24, n. 3, p. 239, doi. 10.1134/1.1262069

By:

Danilova, T. N.;
Evseenko, O. I.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

3.3-μm LEDs for measuring methane.

Published in:

Technical Physics Letters, 1997, v. 23, n. 11, p. 828, doi. 10.1134/1.1261898

By:

Popov, A. A.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers.

Published in:

Technical Physics Letters, 1997, v. 23, n. 3, p. 233

By:

Solov’ev, V. A.;
Mikhaılova, M. P.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article