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Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-45916-4
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- Article
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
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- Crystals (2073-4352), 2024, v. 14, n. 5, p. 414, doi. 10.3390/cryst14050414
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- Article
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy.
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- Crystals (2073-4352), 2023, v. 13, n. 11, p. 1557, doi. 10.3390/cryst13111557
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- Article
Impact of Long-Term Annealing on Photoluminescence from Ge 1−x Sn x Alloys.
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- Crystals (2073-4352), 2021, v. 11, n. 8, p. 905, doi. 10.3390/cryst11080905
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- Article
Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub>x</sub>Ga<sub>1–x</sub>N Layers.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900591
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- Article
The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1478-6
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- Article
Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.
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- Nano Research, 2022, v. 15, n. 3, p. 2405, doi. 10.1007/s12274-021-3855-4
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- Article