Works by Song, Zhitang

Results: 144

Robust thermal stability in DRAM-like Sb2Te-based phase change memory by Hafnium modified.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10423, doi. 10.1007/s10854-022-08029-8

By:

Wang, Ruobing;
Yuan, Zhenhui;
Chen, Xin;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Thickness effect on the crystallization characteristic of RF sputtered Sb thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24240, doi. 10.1007/s10854-021-06889-0

By:

Huang, Yufeng;
Wu, Weihua;
Xu, Shengqing;
Zhu, Xiaoqin;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Microstructure and bending piezoelectric characteristics of AlN film for high-frequency flexible SAW devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 13146, doi. 10.1007/s10854-021-05830-9

By:

Li, Kaixuan;
Wang, Fang;
Deng, Meng;
Hu, Kai;
Song, Dianyou;
Hao, Yaowu;
Di, Huanhuan;
Dong, Kaifei;
Yan, Shuo;
Song, Zhitang;
Zhang, Kailiang

Publication type:

Article

Characteristic of As3Se4-based ovonic threshold switching device.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 7209, doi. 10.1007/s10854-021-05429-0

By:

Yuan, Zhenhui;
Li, Xiaodan;
Wang, Hao;
Xue, Yuan;
Song, Sannian;
Song, Zhitang;
Zhu, Shuaishuai;
Han, Gang;
Yang, Bingjun;
Jimbo, Takehito;
Suu, Koukou

Publication type:

Article

Largely enhanced luminescence intensity and improved optical temperature sensing properties in CaWO4–La2(WO4)3: Er3+, Yb3+ via regulating cations composition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 21, p. 18755, doi. 10.1007/s10854-020-04416-1

By:

Zhang, Ying;
Wang, Xusheng;
Liu, Qian;
Song, Zhitang

Publication type:

Article

Thermally stable tungsten and titanium doped antimony tellurium films for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10912, doi. 10.1007/s10854-020-03642-x

By:

Li, Lin;
Song, Sannian;
Xue, Yuan;
Chen, Xin;
Zhao, Jin;
Shen, Jiabin;
Song, Zhitang

Publication type:

Article

Investigation on thermal stability of vanadium-doped Sb2Te phase change material.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5879, doi. 10.1007/s10854-019-02726-7

By:

Wu, Liangcai;
Li, Tao;
Ji, Xinglong;
Song, Sannian;
Song, Zhitang

Publication type:

Article

The crystallization mechanism of zirconium-doped Sb2Te3 material for phase-change random-access memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5861, doi. 10.1007/s10854-019-02668-0

By:

Zheng, Yonghui;
Qi, Ruijuan;
Cheng, Yan;
Song, Zhitang

Publication type:

Article

The effect of thickness on texture of Ge2Sb2Te5 phase-change films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5848, doi. 10.1007/s10854-019-02645-7

By:

Tang, Qiongyan;
He, Tianze;
Yu, Kun;
Cheng, Yan;
Qi, Ruijuan;
Huang, Rong;
Zhao, Jin;
Song, Wenxiong;
Song, Zhitang

Publication type:

Article

Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5833, doi. 10.1007/s10854-019-02605-1

By:

Wang, Hao;
Song, Sannian;
Song, Zhitang;
Zhou, Zhiguo;
Yao, Dongning;
Lv, Shilong

Publication type:

Article

Constructing reliable PCM and OTS devices with an interfacial carbon layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 22, p. 20037, doi. 10.1007/s10854-019-02373-y

By:

Ren, Kun;
Duan, Xing;
Xiong, Qinqin;
Li, Yangyang;
Lv, Shilong;
Song, Zhitang

Publication type:

Article

SbSe/ZnSb stacked thin films with multi-level phase transition for high density phase change memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15024, doi. 10.1007/s10854-019-01875-z

By:

Zhao, Zihan;
Hua, Sicong;
Shen, Bo;
Zhai, Jiwei;
Lai, Tianshu;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Improvement of thermal stability of antimony film by cerium addition for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 17003, doi. 10.1007/s10854-018-9796-3

By:

Zhang, Jianhao;
Zou, Hua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sun, Yuemei;
Song, Zhitang

Publication type:

Article

Effect of Ti additions on structure and phase stability of Sb2Te3 thin films by experimental and theoretical methods.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 6, p. 4704, doi. 10.1007/s10854-017-8422-0

By:

Zhang, Ling;
Song, Sannian;
Xi, Wei;
Li, Le;
Song, Zhitang

Publication type:

Article

Improving the thermal stability and phase change speed in SbSe films through Er doping.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17719, doi. 10.1007/s10854-017-7710-z

By:

Zou, Hua;
Zhu, Xiaoqin;
Hu, Yifeng;
Sui, Yongxing;
Zhang, Jianhao;
Song, Zhitang

Publication type:

Article

Investigation of Cu-Sn-Se material for high-speed phase-change memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10199, doi. 10.1007/s10854-017-6784-y

By:

You, Haipeng;
Hu, Yifeng;
Zhu, Xiaoqin;
Zou, Hua;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Superlattice-like GaSb/Sb films with ultra-high speed and low power for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3806, doi. 10.1007/s10854-016-5991-2

By:

Zou, Hua;
Zhu, Xiaoqin;
Hu, Yifeng;
Sui, Yongxing;
Zheng, Long;
Wu, Weihua;
Zhai, Liangjun;
Xue, Jianzhong;
Song, Zhitang

Publication type:

Article

Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 923, doi. 10.1007/s10854-016-5608-9

By:

Shen, Lanlan;
Song, Sannian;
Song, Zhitang;
Li, Le;
Guo, Tianqi;
Cheng, Yan;
Wu, Liangcai;
Liu, Bo;
Feng, Songlin

Publication type:

Article

High speed and low power consumption of superlattice-like Ge/SbSe thin films for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2183, doi. 10.1007/s10854-015-4008-x

By:

Wu, Weihua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sui, Yongxing;
Yuan, Li;
Zheng, Long;
Zou, Hua;
Sun, Yuemei;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Improvement of the thermal stability and power consumption of SbSe through nitrogen doping.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9700, doi. 10.1007/s10854-015-3637-4

By:

Wu, Weihua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sui, Yongxing;
Xue, Jianzhong;
Yuan, Li;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Al(SnSe)phase change films for high-temperature data retention and fast transition speed application.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 7757, doi. 10.1007/s10854-015-3421-5

By:

Hu, Yifeng;
Zhu, Xiaoqin;
Zou, Hua;
Lu, Yi;
Xue, Jianzhong;
Sui, Yongxing;
Wu, Weihua;
Yuan, Li;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Optical thermometry based on the upconversion luminescence from Er doped BiTiTaO ferroelectric ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6502, doi. 10.1007/s10854-015-3244-4

By:

Zou, Hua;
Wang, Xusheng;
Hu, Yifeng;
Zhu, Xiaoqing;
Sui, Yongxing;
Shen, Dahua;
Song, Zhitang

Publication type:

Article

CrSbTe materials for phase change memory with high speed and good thermal stability performance.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4138, doi. 10.1007/s10854-015-2958-7

By:

Wang, Qing;
Liu, Bo;
Xia, Yangyang;
Zhang, Zhonghua;
Ji, Xinglong;
Song, Sannian;
Song, Zhitang;
Xi, Wei;
Yao, Dongning;
Lv, Shilong;
Feng, Songlin

Publication type:

Article

Influence of N-doping on the thermal stability and switching speed of ZnSb phase change material.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 1212, doi. 10.1007/s10854-014-2527-5

By:

Zhu, Xiaoqin;
Hu, Yifeng;
Zou, Hua;
Sui, Yongxing;
Xue, Jianzhong;
Shen, Dahua;
Zhang, Jianhao;
Song, Sannian;
Song, Zhitang;
Sun, Shunping

Publication type:

Article

N-doped ZnSb phase-change materials for higher thermal stability and lower power consumption.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 7, p. 2943, doi. 10.1007/s10854-014-1964-5

By:

Zhu, Xiaoqin;
Hu, Yifeng;
Xue, Jianzhong;
Sui, Yongxing;
Wu, Weihua;
Zheng, Long;
Yuan, Li;
Song, Sannian;
Song, Zhitang;
Sun, Shunping

Publication type:

Article

Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5.

Published in:

Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-019-0114-7

By:

Zheng, Yonghui;
Wang, Yong;
Xin, Tianjiao;
Cheng, Yan;
Huang, Rong;
Liu, Pan;
Luo, Min;
Zhang, Zaoli;
Lv, Shilong;
Song, Zhitang;
Feng, Songlin

Publication type:

Article

Multi-Step Resistance Memory Behavior in Ge 2 Sb 2 Te 5 /GeTe Stacked Chalcogenide Films.

Published in:

Integrated Ferroelectrics, 2013, v. 140, n. 1, p. 8, doi. 10.1080/10584587.2012.741367

By:

Hu, Yifeng;
Sun, Mingcheng;
Song, Sannian;
Song, Zhitang;
Zhai, Jiwei

Publication type:

Article

Si/SnSe 2 Multilayer Films for Phase Change Memory Applications.

Published in:

2013

By:

Sun, Mingcheng;
Hu, Yifeng;
Shen, Bo;
Zhai, Jiwei;
Song, Sannian;
Song, Zhitang

Publication type:

Script/Play

A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials.

Published in:

Advanced Science, 2024, v. 11, n. 9, p. 1, doi. 10.1002/advs.202301021

By:

Zheng, Yonghui;
Song, Wenxiong;
Song, Zhitang;
Zhang, Yuanyuan;
Xin, Tianjiao;
Liu, Cheng;
Xue, Yuan;
Song, Sannian;
Liu, Bo;
Lin, Xiaoling;
Kuznetsov, Vladimir G.;
Tupitsyn, Ilya I.;
Kolobov, Alexander V.;
Cheng, Yan

Publication type:

Article

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact.

Published in:

Advanced Science, 2022, v. 9, n. 25, p. 1, doi. 10.1002/advs.202202222

By:

Wang, Xiujun;
Song, Sannian;
Wang, Haomin;
Guo, Tianqi;
Xue, Yuan;
Wang, Ruobing;
Wang, HuiShan;
Chen, Lingxiu;
Jiang, Chengxin;
Chen, Chen;
Shi, Zhiyuan;
Wu, Tianru;
Song, Wenxiong;
Zhang, Sifan;
Watanabe, Kenji;
Taniguchi, Takashi;
Song, Zhitang;
Xie, Xiaoming

Publication type:

Article

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022).

Published in:

Advanced Science, 2022, v. 9, n. 25, p. 1, doi. 10.1002/advs.202270159

By:

Wang, Xiujun;
Song, Sannian;
Wang, Haomin;
Guo, Tianqi;
Xue, Yuan;
Wang, Ruobing;
Wang, HuiShan;
Chen, Lingxiu;
Jiang, Chengxin;
Chen, Chen;
Shi, Zhiyuan;
Wu, Tianru;
Song, Wenxiong;
Zhang, Sifan;
Watanabe, Kenji;
Taniguchi, Takashi;
Song, Zhitang;
Xie, Xiaoming

Publication type:

Article

High PSR external capacitor‐less LDO with adaptive supply‐ripple cancellation technique.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 8, p. 4199, doi. 10.1002/cta.3942

By:

Xu, Siqiu;
Xie, Chenchen;
Chen, Houpeng;
Li, Xi;
Song, Zhitang

Publication type:

Article

The role of arsenic in the operation of sulfur-based electrical threshold switches.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41643-6

By:

Wu, Renjie;
Gu, Rongchuan;
Gotoh, Tamihiro;
Zhao, Zihao;
Sun, Yuting;
Jia, Shujing;
Miao, Xiangshui;
Elliott, Stephen R.;
Zhu, Min;
Xu, Ming;
Song, Zhitang

Publication type:

Article

Sol-gel-hydrothermal growth of oxide thin films at low temperatures.

Published in:

Philosophical Magazine Letters, 2000, v. 80, n. 2, p. 119, doi. 10.1080/095008300176371

By:

Zeng, Jianming;
Lin, Chenglu;
Song, Zhitang;
Li, Kun;
Li, Jinhua

Publication type:

Article

Set/reset reference and parasitic matching scheme to speed up PCM read operation.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 144, doi. 10.1049/el.2016.3132

By:

Yu Lei;
Houpeng Chen;
Xi Li;
Qian Wang;
Qi Zhang;
Jiajun Hu;
Xiaoyun Li;
Zhitang Song

Publication type:

Article

Set/reset reference and parasitic matching scheme to speed up PCM read operation.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 144, doi. 10.1049/el.2016.3132

By:

Lei, Yu;
Chen, Houpeng;
Li, Xi;
Wang, Qian;
Zhang, Qi;
Hu, Jiajun;
Li, Xiaoyun;
Song, Zhitang

Publication type:

Article

Back cover image.

Published in:

InfoMat, 2024, v. 6, n. 8, p. 1, doi. 10.1002/inf2.12622

By:

Wang, Qiang;
Wang, Yachuan;
Wang, Yankun;
Jiang, Luyue;
Zhao, Jinyan;
Song, Zhitang;
Bi, Jinshun;
Zhao, Libo;
Jiang, Zhuangde;
Schwarzkopf, Jutta;
Wu, Shengli;
Zhang, Bin;
Ren, Wei;
Song, Sannian;
Niu, Gang

Publication type:

Article

Long‐term and short‐term plasticity independently mimicked in highly reliable Ru‐doped Ge2Sb2Te5 electronic synapses.

Published in:

InfoMat, 2024, v. 6, n. 8, p. 1, doi. 10.1002/inf2.12543

By:

Wang, Qiang;
Wang, Yachuan;
Wang, Yankun;
Jiang, Luyue;
Zhao, Jinyan;
Song, Zhitang;
Bi, Jinshun;
Zhao, Libo;
Jiang, Zhuangde;
Schwarzkopf, Jutta;
Wu, Shengli;
Zhang, Bin;
Ren, Wei;
Song, Sannian;
Niu, Gang

Publication type:

Article

Front Cover Image.

Published in:

InfoMat, 2021, v. 3, n. 9, p. 1, doi. 10.1002/inf2.12244

By:

Wang, Ruobing;
Song, Zhitang;
Song, Wenxiong;
Xin, Tianjiao;
Lv, Shilong;
Song, Sannian;
Liu, Jun

Publication type:

Article

Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability.

Published in:

InfoMat, 2021, v. 3, n. 9, p. 1008, doi. 10.1002/inf2.12233

By:

Wang, Ruobing;
Song, Zhitang;
Song, Wenxiong;
Xin, Tianjiao;
Lv, Shilong;
Song, Sannian;
Liu, Jun

Publication type:

Article

Dual‐Functional Nonvolatile and Volatile Memory in Resistively Switching Indium Tin Oxide/HfOx Devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 23, p. N.PAG, doi. 10.1002/pssa.201900555

By:

Li, Wenxi;
Wang, Fang;
Zhang, Jingwei;
Li, Chuang;
Wei, Junqing;
Shen, Jiaqiang;
Shan, Xin;
Ren, Tianling;
Zhao, Jinshi;
Song, Zhitang;
Zhang, Kailiang

Publication type:

Article

Investigation on the Scaling Performances of Carbon‐Doped Ge2Sb2Te5 Thin Films for Phase Change Random Access Memory in a 40 nm Process.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 22, p. N.PAG, doi. 10.1002/pssa.201900439

By:

Yan, Shuai;
Cai, Daolin;
Xue, Yuan;
Chen, Yifeng;
Liu, Yuanguang;
Wu, Lei;
Song, Zhitang

Publication type:

Article

The "gene" of reversible phase transformation of phase change materials: Octahedral motif.

Published in:

Nano Research, 2022, v. 15, n. 2, p. 765, doi. 10.1007/s12274-021-3570-1

By:

Song, Zhitang;
Wang, Ruobing;
Xue, Yuan;
Song, Sannian

Publication type:

Article

Erratum to: Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint.

Published in:

2021

By:

Dai, Chaoqi;
Chen, Peiqin;
Qi, Shaocheng;
Hu, Yongbin;
Song, Zhitang;
Dai, Mingzhi

Publication type:

Correction Notice

Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint.

Published in:

Nano Research, 2021, v. 14, n. 1, p. 232, doi. 10.1007/s12274-020-3074-4

By:

Dai, Chaoqi;
Chen, Peiqin;
Qi, Shaocheng;
Hu, Yongbin;
Song, Zhitang;
Dai, Mingzhi

Publication type:

Article

Ta-Doped Sb2Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics.

Published in:

Nano-Micro Letters, 2021, v. 13, n. 1, p. 1, doi. 10.1007/s40820-020-00557-4

By:

Xue, Yuan;
Yan, Shuai;
Lv, Shilong;
Song, Sannian;
Song, Zhitang

Publication type:

Article

A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology.

Published in:

Nano-Micro Letters, 2015, v. 7, n. 2, p. 172, doi. 10.1007/s40820-015-0030-z

By:

Song, Zhitang;
Zhan, YiPeng;
Cai, Daolin;
Liu, Bo;
Chen, Yifeng;
Ren, Jiadong

Publication type:

Article

Nanosecond Phase‐Transition Dynamics in Elemental Tellurium (Adv. Funct. Mater. 4/2025).

Published in:

Advanced Functional Materials, 2025, v. 35, n. 4, p. 1, doi. 10.1002/adfm.202570020

By:

Sun, Yuting;
Li, Bowen;
Yang, Tieying;
Yang, Qun;
Yu, Haibin;
Gotoh, Tamihiro;
Shi, Chenyi;
Shen, Jiabin;
Zhou, Peng;
Elliott, Stephen R.;
Li, Huanglong;
Song, Zhitang;
Zhu, Min

Publication type:

Article

Nanosecond Phase‐Transition Dynamics in Elemental Tellurium.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 4, p. 1, doi. 10.1002/adfm.202408725

By:

Sun, Yuting;
Li, Bowen;
Yang, Tieying;
Yang, Qun;
Yu, Haibin;
Gotoh, Tamihiro;
Shi, Chenyi;
Shen, Jiabin;
Zhou, Peng;
Elliott, Stephen R.;
Li, Huanglong;
Song, Zhitang;
Zhu, Min

Publication type:

Article

Neural Architecture Search with In‐Memory Multiply–Accumulate and In‐Memory Rank Based on Coating Layer Optimized C‐Doped Ge2Sb2Te5 Phase Change Memory (Adv. Funct. Mater. 15/2024).

Published in:

Advanced Functional Materials, 2024, v. 34, n. 15, p. 1, doi. 10.1002/adfm.202300458

By:

Yan, Longhao;
Wu, Qingyu;
Li, Xi;
Xie, Chenchen;
Zhou, Xilin;
Li, Yuqi;
Shi, Daijing;
Yu, Lianfeng;
Zhang, Teng;
Tao, Yaoyu;
Yan, Bonan;
Zhong, Min;
Song, Zhitang;
Yang, Yuchao;
Huang, Ru

Publication type:

Article