Works by Song, Zhitang
Results: 140
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>.
- Published in:
- Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-019-0114-7
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- Article
High Conductivity Update Linearity MoS<sub>2</sub> Memtransistors Array Based on Lithium‐Ion Modulation.
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- Advanced Materials Interfaces, 2022, v. 9, n. 32, p. 1, doi. 10.1002/admi.202201775
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- Article
Effects of excess Pb on structural and electrical properties of Pb(Zr0.48Ti0.52)O3 thin films using MOD process.
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- Journal of Materials Science, 2001, v. 36, n. 17, p. 4285, doi. 10.1023/A:1017999223329
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- Article
Ultrafast Multilevel Optical Tuning with CSb<sub>2</sub>Te<sub>3</sub> Thin Films.
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- Advanced Optical Materials, 2018, v. 6, n. 17, p. 1, doi. 10.1002/adom.201800360
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- Article
Ta-Doped Sb<sub>2</sub>Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics.
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- Nano-Micro Letters, 2021, v. 13, n. 1, p. 1, doi. 10.1007/s40820-020-00557-4
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- Article
A Phase Change Memory Chip Based on TiSbTe Alloy in 40-nm Standard CMOS Technology.
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- Nano-Micro Letters, 2015, v. 7, n. 2, p. 172, doi. 10.1007/s40820-015-0030-z
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- Article
Performance improvement of phase-change memory cell using AlSb<sub>3</sub>Te and atomic layer deposition TiO<sub>2</sub> buffer layer.
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- Nanoscale Research Letters, 2013, v. 8, n. 2, p. 1, doi. 10.1186/1556-276X-8-77
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- Article
Absorption enhancement in 1D Ag/SiO<sub>2</sub> metallic-dielectric photonic crystals.
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- Optica Applicata, 2009, v. 39, n. 3, p. 473
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- Article
Phase-Change Memory Materials by Design: A Strain Engineering Approach.
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- Advanced Materials, 2016, v. 28, n. 15, p. 3007, doi. 10.1002/adma.201505865
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- Article
Understanding the stability behavior of colloidal silica in different alkali environments.
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- Journal of Nanoparticle Research, 2024, v. 26, n. 5, p. 1, doi. 10.1007/s11051-024-05993-6
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- Article
A Complicated Route from Disorder to Order in Antimony–Tellurium Binary Phase Change Materials.
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- Advanced Science, 2024, v. 11, n. 9, p. 1, doi. 10.1002/advs.202301021
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- Article
Rules of hierarchical melt and coordinate bond to design crystallization in doped phase change materials.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-26696-9
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- Article
Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses.
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- Micromachines, 2019, v. 10, n. 7, p. 461, doi. 10.3390/mi10070461
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- Article
C-doped Sb<sub>2</sub> Te<sub>3</sub> high-speed phase change materials.
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- Journal of Donghua University (Natural Science Edition), 2023, v. 49, n. 5, p. 33, doi. 10.19886/j.cnki.dhdz.2022.0237
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- Article
Back cover image.
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- InfoMat, 2024, v. 6, n. 8, p. 1, doi. 10.1002/inf2.12622
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- Article
Long‐term and short‐term plasticity independently mimicked in highly reliable Ru‐doped Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> electronic synapses.
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- InfoMat, 2024, v. 6, n. 8, p. 1, doi. 10.1002/inf2.12543
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- Article
Front Cover Image.
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- InfoMat, 2021, v. 3, n. 9, p. 1, doi. 10.1002/inf2.12244
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- Article
Phase‐change memory based on matched Ge‐Te, Sb‐Te, and In‐Te octahedrons: Improved electrical performances and robust thermal stability.
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- InfoMat, 2021, v. 3, n. 9, p. 1008, doi. 10.1002/inf2.12233
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- Article
Enhancing Slurry Stability and Surface Flatness of Silicon Wafers through Organic Amine-Catalyzed Synthesis Silica Sol.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 16, p. 1371, doi. 10.3390/nano14161371
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- Article
Great Potential of Si-Te Ovonic Threshold Selector in Electrical Performance and Scalability.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 6, p. 1114, doi. 10.3390/nano13061114
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- Article
Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 6, p. 1050, doi. 10.3390/nano13061050
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- Article
The Effect of Carbon Doping on the Crystal Structure and Electrical Properties of Sb 2 Te 3.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 4, p. 671, doi. 10.3390/nano13040671
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- Article
Advantages of Ta-Doped Sb 3 Te 1 Materials for Phase Change Memory Applications.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 4, p. 633, doi. 10.3390/nano13040633
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- Article
Pt Modified Sb 2 Te 3 Alloy Ensuring High−Performance Phase Change Memory.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 12, p. 1996, doi. 10.3390/nano12121996
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- Article
High PSR external capacitor‐less LDO with adaptive supply‐ripple cancellation technique.
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- International Journal of Circuit Theory & Applications, 2024, v. 52, n. 8, p. 4199, doi. 10.1002/cta.3942
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- Article
Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material.
- Published in:
- Nature Communications, 2015, v. 6, n. 11, p. 10040, doi. 10.1038/ncomms10040
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- Article
One order of magnitude faster phase change at reduced power in Ti-Sb-Te.
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- Nature Communications, 2014, v. 5, n. 7, p. 4086, doi. 10.1038/ncomms5086
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- Article
A Curvature Compensation Technique for Low-Voltage Bandgap Reference.
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- Energies (19961073), 2021, v. 14, n. 21, p. 7193, doi. 10.3390/en14217193
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- Article
In‐Memory Realization of Eligibility Traces Based on Conductance Drift of Phase Change Memory for Energy‐Efficient Reinforcement Learning.
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- Advanced Materials, 2022, v. 34, n. 6, p. 1, doi. 10.1002/adma.202107811
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- Article
Disclosing the basis of the ratio of the firing voltage to the threshold voltage in Ovonic Threshold Switching selectors: Urbach energy.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 28, p. 1, doi. 10.1007/s10854-023-11254-4
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- Article
Robust thermal stability in DRAM-like Sb<sub>2</sub>Te-based phase change memory by Hafnium modified.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10423, doi. 10.1007/s10854-022-08029-8
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- Article
Thickness effect on the crystallization characteristic of RF sputtered Sb thin films.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 19, p. 24240, doi. 10.1007/s10854-021-06889-0
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- Article
Microstructure and bending piezoelectric characteristics of AlN film for high-frequency flexible SAW devices.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 13146, doi. 10.1007/s10854-021-05830-9
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- Article
Characteristic of As3Se4-based ovonic threshold switching device.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 7209, doi. 10.1007/s10854-021-05429-0
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- Article
Largely enhanced luminescence intensity and improved optical temperature sensing properties in CaWO<sub>4</sub>–La<sub>2</sub>(WO<sub>4</sub>)<sub>3</sub>: Er<sup>3+</sup>, Yb<sup>3+</sup> via regulating cations composition.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 21, p. 18755, doi. 10.1007/s10854-020-04416-1
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- Article
Thermally stable tungsten and titanium doped antimony tellurium films for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10912, doi. 10.1007/s10854-020-03642-x
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- Article
Investigation on thermal stability of vanadium-doped Sb2Te phase change material.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5879, doi. 10.1007/s10854-019-02726-7
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- Article
The crystallization mechanism of zirconium-doped Sb2Te3 material for phase-change random-access memory application.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5861, doi. 10.1007/s10854-019-02668-0
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- Article
The effect of thickness on texture of Ge2Sb2Te5 phase-change films.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5848, doi. 10.1007/s10854-019-02645-7
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- Article
Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition.
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5833, doi. 10.1007/s10854-019-02605-1
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- Article
Constructing reliable PCM and OTS devices with an interfacial carbon layer.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 22, p. 20037, doi. 10.1007/s10854-019-02373-y
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- Article
SbSe/ZnSb stacked thin films with multi-level phase transition for high density phase change memory applications.
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- Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15024, doi. 10.1007/s10854-019-01875-z
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- Article
Improvement of thermal stability of antimony film by cerium addition for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 17003, doi. 10.1007/s10854-018-9796-3
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- Article
Effect of Ti additions on structure and phase stability of Sb<sub>2</sub>Te<sub>3</sub> thin films by experimental and theoretical methods.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 6, p. 4704, doi. 10.1007/s10854-017-8422-0
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- Article
Improving the thermal stability and phase change speed in SbSe films through Er doping.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 17719, doi. 10.1007/s10854-017-7710-z
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- Article
Investigation of Cu-Sn-Se material for high-speed phase-change memory applications.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10199, doi. 10.1007/s10854-017-6784-y
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- Article
Superlattice-like GaSb/Sb films with ultra-high speed and low power for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 4, p. 3806, doi. 10.1007/s10854-016-5991-2
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- Article
Properties of Ti-Sb-Te doped with SbSe alloy for application in nonvolatile phase change memory.
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- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 923, doi. 10.1007/s10854-016-5608-9
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- Article
High speed and low power consumption of superlattice-like Ge/SbSe thin films for phase change memory application.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2183, doi. 10.1007/s10854-015-4008-x
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- Article
Improvement of the thermal stability and power consumption of SbSe through nitrogen doping.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9700, doi. 10.1007/s10854-015-3637-4
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- Article