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An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 5, p. 889, doi. 10.3390/electronics13050889
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- Article
An Optimized Device Structure with Improved Erase Operation within the Indium Gallium Zinc Oxide Channel in Three-Dimensional NAND Flash Applications.
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- Electronics (2079-9292), 2024, v. 13, n. 2, p. 451, doi. 10.3390/electronics13020451
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- Article
An Improved Structure Enabling Hole Erase Operation When Using an IGZO Channel in a 3D NAND Flash Structure to Which COP (Cell-On-Peri) Structure Is Applied.
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- Electronics (2079-9292), 2023, v. 12, n. 13, p. 2945, doi. 10.3390/electronics12132945
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- Article
Layer‐Dependent Effects of Interfacial Phase‐Change Memory for an Artificial Synapse.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 9, p. 1, doi. 10.1002/pssr.202100616
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- Article
A Novel Structure to Improve the Erase Speed in 3D NAND Flash Memory to Which a Cell-On-Peri (COP) Structure and a Ferroelectric Memory Device Are Applied.
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- Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11132038
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- Article
Sputter‐grown GeTe/Sb<sub>2</sub>Te<sub>3</sub> superlattice interfacial phase change memory for low power and multi‐level‐cell operation.
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- Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 1, p. 38, doi. 10.1049/ell2.12337
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- Article
Impact of Residual Stress on a Polysilicon Channel in Scaled 3D NAND Flash Memory.
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- Electronics (2079-9292), 2021, v. 10, n. 21, p. 2632, doi. 10.3390/electronics10212632
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- Article
Bidirectional Electric-Induced Conductance Based on GeTe/Sb 2 Te 3 Interfacial Phase Change Memory for Neuro-Inspired Computing.
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- Electronics (2079-9292), 2021, v. 10, n. 21, p. 2692, doi. 10.3390/electronics10212692
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- Article
Gate All around with Back Gate NAND Flash Structure for Excellent Reliability Characteristics in Program Operation.
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- Electronics (2079-9292), 2021, v. 10, n. 15, p. 1828, doi. 10.3390/electronics10151828
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- Article
Floating Filler (FF) in an Indium Gallium Zinc Oxide (IGZO) Channel Improves the Erase Performance of Vertical Channel NAND Flash with a Cell-on-Peri (COP) Structure.
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- Electronics (2079-9292), 2021, v. 10, n. 13, p. 1561, doi. 10.3390/electronics10131561
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- Article
A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations.
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- Electronics (2079-9292), 2021, v. 10, n. 1, p. 32, doi. 10.3390/electronics10010032
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- Publication type:
- Article
A New Read Scheme for Alleviating Cell-to-Cell Interference in Scaled-Down 3D NAND Flash Memory.
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- Electronics (2079-9292), 2020, v. 9, n. 11, p. 1775, doi. 10.3390/electronics9111775
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- Article