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A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 34, p. 5316, doi. 10.1002/adfm.201303520
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- Article
Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2-x</sub>/TiN Structure.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 32, p. 5086, doi. 10.1002/adfm.201400064
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- Article
Resistive Memory: 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory (Adv. Funct. Mater. 11/2013).
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- Advanced Functional Materials, 2013, v. 23, n. 11, p. 1350, doi. 10.1002/adfm.201370054
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- Article
32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory.
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- Advanced Functional Materials, 2013, v. 23, n. 11, p. 1440, doi. 10.1002/adfm.201202170
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- Article
Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors.
- Published in:
- Scientific Reports, 2016, p. 20825, doi. 10.1038/srep20825
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- Article
Thickness effect of ultra-thin Ta<sub>2</sub>O<sub>5</sub> resistance switching layer in 28 nm-diameter memory cell.
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- Scientific Reports, 2015, p. 15965, doi. 10.1038/srep15965
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- Article
Highly Improved Uniformity in the Resistive Switching Parameters of TiO<sub>2</sub> Thin Films by Inserting Ru Nanodots.
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- Advanced Materials, 2013, v. 25, n. 14, p. 1987, doi. 10.1002/adma.201204572
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- Article
Thickness-dependent electroforming behavior of ultra-thin Ta<sub>2</sub>O<sub>5</sub> resistance switching layer.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 6, p. 362, doi. 10.1002/pssr.201510110
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- Article
Bias polarity dependent local electrical conduction in resistive switching TiO.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 5/6, p. 112, doi. 10.1002/pssr.201004066
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- Article
Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2-x</sub> /Ti Resistive Switching Memory Competing with Multilevel NAND Flash.
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- Advanced Materials, 2015, v. 27, n. 25, p. 3811, doi. 10.1002/adma.201501167
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- Article
Real-time identification of the evolution of conducting nano-filaments in TiO<sub>2</sub> thin film ReRAM.
- Published in:
- Scientific Reports, 2013, p. 1, doi. 10.1038/srep03443
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- Publication type:
- Article