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Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes.
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- Micromachines, 2022, v. 13, n. 8, p. 1233, doi. 10.3390/mi13081233
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Numerical modeling and experimental validation of pouch-type lithium-ion battery.
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- Journal of Applied Electrochemistry, 2014, v. 44, n. 9, p. 1013, doi. 10.1007/s10800-014-0723-x
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- Article
Depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes using surface‐plasmon‐enhanced Raman spectroscopy.
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- Journal of Raman Spectroscopy, 2021, v. 52, n. 11, p. 1860, doi. 10.1002/jrs.6247
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- Article
In Situ Oxidation of GaN Layer and Its Effect on Structural Properties of GaO Films Grown by Plasma-Assisted Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2017, v. 46, n. 6, p. 3499, doi. 10.1007/s11664-017-5286-2
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Purification of a primary coolant in a nuclear power plant using a magnetic filter - electrodeionization hybrid separation system.
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- Journal of Radioanalytical & Nuclear Chemistry, 2004, v. 262, n. 3, p. 725, doi. 10.1007/s10967-004-0500-0
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- Article
Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices.
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- Scientific Reports, 2016, p. 24404, doi. 10.1038/srep24404
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- Article
Microcontact Printing: Arrays of Silicon Micro/Nanostructures Formed in Suspended Configurations for Deterministic Assembly Using Flat and Roller-Type Stamps (Small 4/2011).
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- Small, 2011, v. 7, n. 4, p. 417, doi. 10.1002/smll.201190007
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- Article
Arrays of Silicon Micro/Nanostructures Formed in Suspended Configurations for Deterministic Assembly Using Flat and Roller-Type Stamps.
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- Small, 2011, v. 7, n. 4, p. 484, doi. 10.1002/smll.201001633
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- Article
Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics.
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- Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-06399-4
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High Performance Colloidal Quantum Dot Photovoltaics by Controlling Protic Solvents in Ligand Exchange.
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- Advanced Energy Materials, 2017, v. 7, n. 15, p. n/a, doi. 10.1002/aenm.201700301
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- Article
Illustration of Capacity Fading Factors on the Example of La<sub>2</sub>(Li<sub>0.5</sub>Ni<sub>0.5</sub>)O<sub>4</sub>‐Modified High Nickel Layered Oxide Material.
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- Batteries & Supercaps, 2023, v. 6, n. 3, p. 1, doi. 10.1002/batt.202200466
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- Article
Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 8/9, p. 221, doi. 10.1002/pssr.201004246
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- Article
Charge‐Selective, Narrow‐Gap Indium Arsenide Quantum Dot Layer for Highly Stable and Efficient Organic Photovoltaics.
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- Advanced Energy Materials, 2022, v. 12, n. 24, p. 1, doi. 10.1002/aenm.202104018
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- Article
Graphene/PbS quantum dot hybrid structure for application in near-infrared photodetectors.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-69302-6
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- Article
Depth dependent strain analysis in GaN-based light emitting diodes using surface-plasmon enhanced Raman spectroscopy.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600805
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- Article
A Colloidal‐Quantum‐Dot‐Based Self‐Charging System via the Near‐Infrared Band.
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- Advanced Materials, 2018, v. 30, n. 25, p. 1, doi. 10.1002/adma.201707224
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- Article
Suppression of composition modulation in In-rich In<sub> x</sub>Ga<sub>1− x</sub>N layer with high In content ( x ∼ 0.67).
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 12, p. 2737, doi. 10.1002/pssa.201127307
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- Article