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Investigation of the Interface Layer Phase Composition Obtained by Hot Pressing of Cr and Si.
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- Semiconductors, 2023, v. 57, n. 8, p. 373, doi. 10.1134/S106378262309018X
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- Article
Microstructure of a CrSi<sub>2</sub> Transition Layer Produced by Hot Pressing of Cr and Si.
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- Crystallography Reports, 2023, v. 68, n. 4, p. 615, doi. 10.1134/S1063774523700281
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- Article
Microstructure and Phase Composition of an Alloy of Iron and Chrome Disilicides.
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- Semiconductors, 2023, v. 57, n. 2, p. 143, doi. 10.1134/S106378262303017X
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- Article
Feasibility of Using Chromium as a Switching Material for CrSi<sub>2</sub>.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2021, v. 15, n. 4, p. 678, doi. 10.1134/S1027451021040182
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- Article
On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn.
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- Semiconductors, 2019, v. 53, n. 6, p. 761, doi. 10.1134/S1063782619060253
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- Article
Synthesis of Rhenium-Silicide Microcrystals in a Tin Melt.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 6, p. 1061, doi. 10.1134/S102745101805049X
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- Article
Structure and thermoelectric properties of CrSi<sub>2</sub> crystallized from a tin solution—melt.
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- Technical Physics, 2010, v. 55, n. 5, p. 750, doi. 10.1134/S1063784210050282
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- Article
Physicochemical Interaction at the Contact of Higher Manganese Silicide with Chromium.
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- Technical Physics, 2002, v. 47, n. 5, p. 550, doi. 10.1134/1.1479981
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- Article
The Behavior of Higher Manganese Silicide Single Crystals under Electrochemical Treatment.
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- Technical Physics, 2000, v. 45, n. 8, p. 1094, doi. 10.1134/1.1307026
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- Article
Chromium as an Antidiffusion Interlayer in Higher Manganese Silicide–Nickel Contacts.
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- Technical Physics, 2000, v. 45, n. 5, p. 641, doi. 10.1134/1.1259692
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- Article
Thermoelectric elements based on compounds of silicon and transition metals.
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- Technical Physics Letters, 1997, v. 23, n. 8, p. 602, doi. 10.1134/1.1261766
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- Article