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Brightness of AlGaInAs/InP Multimode Diode Lasers with Different Aperture Widths.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 20, p. 2746, doi. 10.3390/nano13202746
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- Publication type:
- Article
Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2386, doi. 10.3390/nano13172386
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- Article
High-Power Quantum Cascade Lasers Emitting at 8 μm: Technology and Analysis.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 22, p. 3971, doi. 10.3390/nano12223971
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- Article
Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows.
- Published in:
- Nanomaterials (2079-4991), 2021, v. 11, n. 1, p. 11, doi. 10.3390/nano11010011
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- Publication type:
- Article
Features of Metalorganic Chemical Vapor Deposition Selective Area Epitaxy of Al z Ga 1−z As (0 ≤ z ≤ 0.3) Layers in Arrays of Ultrawide Windows.
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- Technologies (2227-7080), 2023, v. 11, n. 4, p. 89, doi. 10.3390/technologies11040089
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- Article