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Luminescence in p–i–n Structures with Compensated Quantum Wells.
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- Semiconductors, 2024, v. 58, n. 5, p. 375, doi. 10.1134/S1063782624050014
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High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures.
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- Semiconductors, 2024, v. 58, n. 3, p. 267, doi. 10.1134/S106378262403014X
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- Article
Lateral Mode Selection of Single-Mode Laser Diode Microstripe Bar (1050 nm) in External Cavity.
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- Semiconductors, 2024, v. 58, n. 1, p. 61, doi. 10.1134/S1063782624010135
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- Article
Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling.
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- Semiconductors, 2023, v. 57, n. 10, p. 445, doi. 10.1134/S1063782623090038
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- Article
Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers.
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- Semiconductors, 2023, v. 57, n. 9, p. 377, doi. 10.1134/S1063782623070023
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- Article
Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors.
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- Semiconductors, 2023, v. 57, n. 3, p. 166, doi. 10.1134/S1063782623050159
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- Article
Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness.
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- Semiconductors, 2022, v. 56, n. 2, p. 115, doi. 10.1134/S106378262201016X
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- Article
Quantum-Cascade Laser with Radiation Emission through a Textured Layer.
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- Semiconductors, 2022, v. 56, n. 1, p. 1, doi. 10.1134/S106378262201002X
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- Article
Isotype n-AlGaAs/n-GaAs Heterostructures Optimized for Efficient Interband Radiative Recombination under Current Pumping.
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- Semiconductors, 2021, v. 55, n. 1, p. S8, doi. 10.1134/S1063782621050158
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- Article
Surface Emitting Quantum-Cascade Ring Laser.
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- Semiconductors, 2021, v. 55, n. 7, p. 591, doi. 10.1134/S106378262107006X
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- Article
Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures.
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- Semiconductors, 2021, v. 55, n. 5, p. 518, doi. 10.1134/S1063782621050134
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- Article
High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broadened Lateral Waveguide of the Mesa-Stripe Design.
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- Semiconductors, 2021, v. 55, n. 4, p. 455, doi. 10.1134/S1063782621040163
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- Article
Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon.
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- Semiconductors, 2021, v. 55, n. 1, p. 122, doi. 10.1134/S1063782621010140
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- Article
Spectroscopic Studies of Integrated GaAs/Si Heterostructures.
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- Semiconductors, 2021, v. 55, n. 1, p. 44, doi. 10.1134/S1063782621010139
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- Article
Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output.
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- Semiconductors, 2020, v. 54, n. 14, p. 1816, doi. 10.1134/S106378262014002X
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- Article
Study of the Spatial and Current Dynamics of Optical Loss in Semiconductor Laser Heterostructures by Optical Probing.
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- Semiconductors, 2020, v. 54, n. 8, p. 882, doi. 10.1134/S1063782620080102
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- Article
Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures.
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- Semiconductors, 2020, v. 54, n. 5, p. 581, doi. 10.1134/S1063782620050097
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- Article
Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure.
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- Semiconductors, 2020, v. 54, n. 5, p. 575, doi. 10.1134/S1063782620050140
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- Article
Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide.
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- Semiconductors, 2020, v. 54, n. 4, p. 489, doi. 10.1134/S1063782620040181
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- Article
Carrier-Transport Processes in n+-GaAs/n0-GaAs/n+-GaAs Isotype Heterostructures with a Thin Wide-Gap AlGaAs Barrier.
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- Semiconductors, 2020, v. 54, n. 5, p. 529, doi. 10.1134/S1063782620050139
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- Article
Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide.
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- Semiconductors, 2020, v. 54, n. 4, p. 484, doi. 10.1134/S106378262004017X
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- Article
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers.
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- Semiconductors, 2019, v. 53, n. 6, p. 828, doi. 10.1134/S1063782619060162
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Specific Features of Carrier Transport in n<sup>+</sup>–n<sup>0</sup>–n<sup>+</sup> Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities.
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- Semiconductors, 2019, v. 53, n. 6, p. 806, doi. 10.1134/S1063782619060241
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- Article
All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating.
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- Semiconductors, 2018, v. 52, n. 12, p. 1595, doi. 10.1134/S1063782618120217
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Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900-920 nm).
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- Semiconductors, 2010, v. 44, n. 10, p. 1370, doi. 10.1134/S1063782610100222
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The temperature dependence of internal optical losses in semiconductor lasers (λ = 900-920 nm).
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- Semiconductors, 2010, v. 44, n. 10, p. 1365, doi. 10.1134/S1063782610100210
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Pulsed semiconductor lasers with higher optical strength of cavity output mirrors.
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- Semiconductors, 2010, v. 44, n. 6, p. 789, doi. 10.1134/S1063782610060163
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- Article
Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers.
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- Semiconductors, 2010, v. 44, n. 6, p. 805, doi. 10.1134/S1063782610060199
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Temperature delocalization of charge carriers in semiconductor lasers.
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- Semiconductors, 2010, v. 44, n. 5, p. 661, doi. 10.1134/S1063782610050209
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- Article
Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide.
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- Semiconductors, 2010, v. 44, n. 2, p. 233, doi. 10.1134/S106378261002017X
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A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD.
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- Semiconductors, 2010, v. 44, n. 2, p. 238, doi. 10.1134/S1063782610020181
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- Article
Dissipation loss of mid-infrared radiation in a dielectric waveguide.
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- Semiconductors, 2010, v. 44, n. 2, p. 243, doi. 10.1134/S1063782610020193
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- Article
High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures.
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- Semiconductors, 2009, v. 43, n. 12, p. 1602, doi. 10.1134/S1063782609120057
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Quenching of lasing in high power semiconductor laser.
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- Semiconductors, 2009, v. 43, n. 10, p. 1369, doi. 10.1134/S1063782609100200
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- Article
Dielectric waveguide for middle and far infrared radiation.
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- Semiconductors, 2009, v. 43, n. 8, p. 1036, doi. 10.1134/S1063782609080132
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- Article
High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement.
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- Semiconductors, 2009, v. 43, n. 4, p. 519, doi. 10.1134/S1063782609040216
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GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm.
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- Semiconductors, 2009, v. 43, n. 4, p. 532, doi. 10.1134/S1063782609040241
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- Article
Selection of modes in transverse-mode waveguides for semiconductor lasers based on asymmetric heterostructures.
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- Semiconductors, 2009, v. 43, n. 1, p. 112, doi. 10.1134/S1063782609010229
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High-power laser diodes with an emission wavelength of 835 nm on the basis of various types of heterostructures.
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- Semiconductors, 2008, v. 42, n. 7, p. 862, doi. 10.1134/S106378260807018X
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High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide.
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- Semiconductors, 2008, v. 42, n. 3, p. 350, doi. 10.1007/s11453-008-3020-7
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- Article
Double-band generation in quantum-well semiconductor laser at high injection levels.
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- Semiconductors, 2007, v. 41, n. 10, p. 1230, doi. 10.1134/S1063782607100193
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Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation.
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- Semiconductors, 2007, v. 41, n. 8, p. 984, doi. 10.1134/S1063782607080234
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- Article
Nonlinear-optical effects in semiconductor lasers based on InGaAs/GaAs/AlGaAs quantum-confinement heterostructures.
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- Semiconductors, 2007, v. 41, n. 3, p. 361, doi. 10.1134/S1063782607030220
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- Article
Finite time of carrier energy relaxation as a cause of optical-power limitation in semiconductor lasers.
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- Semiconductors, 2006, v. 40, n. 8, p. 990, doi. 10.1134/S1063782606080197
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- Article
High-power lasers (λ = 940–980 nm) based on asymmetric GaInAs/GaInAsP/AlGaAs separate-confinement heterostructure.
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- Semiconductors, 2006, v. 40, n. 6, p. 745, doi. 10.1134/S1063782606060224
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- Article
High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures.
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- Semiconductors, 2006, v. 40, n. 5, p. 611, doi. 10.1134/S1063782606050174
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- Article
High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures.
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- Semiconductors, 2005, v. 39, n. 3, p. 370, doi. 10.1134/1.1882804
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- Article
Ultralow Internal Optical Loss in Separate-Confinement Quantum-Well Laser Heterostructures.
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- Semiconductors, 2004, v. 38, n. 12, p. 1430, doi. 10.1134/1.1836066
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- Article
Internal Optical Loss in Semiconductor Lasers.
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- Semiconductors, 2004, v. 38, n. 3, p. 360, doi. 10.1134/1.1682615
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- Article
Switching between generation of two quantum states in quantum-well laser diodes.
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- Technical Physics Letters, 2008, v. 34, n. 8, p. 708, doi. 10.1134/S1063785008080257
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- Article