Works by Skorupa, W.

Results: 35

Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing.
Published in:
Applied Physics B: Lasers & Optics, 2010, v. 101, n. 1/2, p. 315, doi. 10.1007/s00340-010-4140-5
By:
- Prucnal, S.;
- Turek, M.;
- Drozdziel, A.;
- Pyszniak, K.;
- Zhou, S. Q.;
- Kanjilal, A.;
- Skorupa, W.;
- Zuk, J.
Publication type:
Article
Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence.
Published in:
Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 439, doi. 10.1007/s00340-009-3729-z
By:
- Rebohle, L.;
- Lehmann, J.;
- Prucnal, S.;
- Sun, J. M.;
- Helm, M.;
- Skorupa, W.
Publication type:
Article
Blue electroluminescence of ytterbium clusters in SiO2 by co-operative up-conversion.
Published in:
Applied Physics B: Lasers & Optics, 2010, v. 98, n. 2/3, p. 451, doi. 10.1007/s00340-009-3751-1
By:
- Prucnal, S.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures.
Published in:
Applied Physics B: Lasers & Optics, 2009, v. 94, n. 2, p. 289, doi. 10.1007/s00340-008-3338-2
By:
- Prucnal, S.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.
Published in:
Applied Physics B: Lasers & Optics, 2008, v. 91, n. 1, p. 123, doi. 10.1007/s00340-008-2948-z
By:
- Prucnal, S.;
- Rebohle, L.;
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Tjagulskii, I. P.;
- Skorupa, W.
Publication type:
Article
Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers.
Published in:
Applied Physics B: Lasers & Optics, 2007, v. 88, n. 2, p. 241, doi. 10.1007/s00340-007-2700-0
By:
- Prucnal, S.;
- Sun, J.M.;
- Nazarov, A.;
- Tjagulskii, I.P.;
- Osiyuk, I.N.;
- Fedaruk, R.;
- Skorupa, W.
Publication type:
Article
Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.
Published in:
Applied Physics B: Lasers & Optics, 2007, v. 87, n. 1, p. 129, doi. 10.1007/s00340-006-2534-1
By:
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Sun, J. M.;
- Yankov, R. A.;
- Skorupa, W.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Prucnal, S.;
- Gebel, T.;
- Rebohle, L.
Publication type:
Article
Transient behavior of the strong violet electroluminescence of Ge-implanted SiO[sub 2] layers.
Published in:
Applied Physics B: Lasers & Optics, 2002, v. 74, n. 1, p. 53, doi. 10.1007/s003400100771
By:
- Rebohle, L.;
- Gebel, T.;
- von Borany, J.;
- Skorupa, W.;
- Helm, M.;
- Pacifici, D.;
- Franzò, G.;
- Priolo, F.
Publication type:
Article
Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements.
Published in:
Applied Physics B: Lasers & Optics, 2000, v. 71, n. 2, p. 131, doi. 10.1007/PL00006966
By:
- Rebohle, L.;
- von Borany, J.;
- Fröb, H.;
- Skorupa, W.
Publication type:
Article
Płucne objawy raka jądra (kto pierwszy powinien rozpoznać)?
Published in:
Polish Pneumonology & Allergology / Pneumonologia i Alergologia Polska, 2012, v. 80, n. Supp 1, p. 13
By:
- Radwan-Röhrenschef, P.;
- Lewandowska, K.;
- Skorupa, W.;
- Kuś, J.
Publication type:
Article
Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling.
Published in:
Journal of Low Temperature Physics, 2015, v. 180, n. 5/6, p. 342, doi. 10.1007/s10909-015-1318-6
By:
- Heera, V.;
- Fiedler, J.;
- Schmidt, B.;
- Hübner, R.;
- Voelskow, M.;
- Skrotzki, R.;
- Skorupa, W.
Publication type:
Article
Comparative Study of SIMOX Structures Using Four Analytical Techniques.
Published in:
Surface & Interface Analysis: SIA, 1996, v. 24, n. 4, p. 243, doi. 10.1002/(SICI)1096-9918(199604)24:4<243::AID-SIA106>3.0.CO;2-H
By:
- Fukarek, W.;
- Yankov, R. A.;
- Skorupa, W.
Publication type:
Article
SiO compound formation by oxygen ion implantation into silicon.
Published in:
Surface & Interface Analysis: SIA, 1985, v. 7, n. 5, p. 207, doi. 10.1002/sia.740070502
By:
- Hensel, E.;
- Wollschläger, K.;
- Schulze, D.;
- Kreissig, U.;
- Skorupa, W.;
- Finster, J.
Publication type:
Article
Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer.
Published in:
Acta Physica Polonica: A, 2014, v. 125, n. 6, p. 1404, doi. 10.12693/APhysPolA.125.1404
By:
- PRUCNAL, S.;
- JIAO, F.;
- REICHEL, D.;
- ZHAO, K.;
- CORNELIUS, S.;
- TUREK, M.;
- PYSZNIAK, K.;
- DROZDZIEL, A.;
- SKORUPA, W.;
- HELM, M.;
- ZHOU, S.
Publication type:
Article
Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors.
Published in:
Acta Physica Polonica: A, 2013, v. 123, n. 5, p. 916, doi. 10.12693/APhysPolA.123.916
By:
- FIEDLER, J.;
- HEERA, V.;
- VOELSKOWA, M.;
- MÜCKLIC, A.;
- REUTHE, H.;
- SKORUPA, W.;
- GOBSCH, G.;
- HELM, M.
Publication type:
Article
Fabrication of Si1-xGex Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing.
Published in:
Acta Physica Polonica: A, 2013, v. 123, n. 5, p. 858, doi. 10.12693/APhysPolA.123.858
By:
- GAO, K.;
- PRUCNAL, S.;
- MüCKLICH, A.;
- SKORUPA, W.;
- ZHOU, S.
Publication type:
Article
Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing.
Published in:
Acta Physica Polonica: A, 2011, v. 120, n. 1, p. 30, doi. 10.12693/APhysPolA.120.30
By:
- Prucnal, S.;
- Shumann, T.;
- Skorupa, W.;
- Abendroth, B.;
- Krockert, K.;
- Möller, H. J.
Publication type:
Article
Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy.
Published in:
Scientific Reports, 2015, p. 8329, doi. 10.1038/srep08329
By:
- Zhou, Shengqiang;
- Liu, Fang;
- Prucnal, S.;
- Gao, Kun;
- Khalid, M.;
- Baehtz, C.;
- Posselt, M.;
- Skorupa, W.;
- Helm, M.
Publication type:
Article
Theoretical description of high-temperature implantation of silicon carbide with N[sup +] and Al[sup +] ions.
Published in:
Technical Physics Letters, 1998, v. 24, n. 1, p. 17, doi. 10.1134/1.1261975
By:
- Kulikov, D. V.;
- Trushin, Yu. V.;
- Yankov, R. A.;
- Pezoldt, J.;
- Skorupa, W.
Publication type:
Article
High-temperature high-dose implantation of N[sup +] and Al[sup +] ions in 6H–SiC.
Published in:
Technical Physics Letters, 1997, v. 23, n. 8, p. 617, doi. 10.1134/1.1261883
By:
- Yankov, R. A.;
- Voelskow, M.;
- Kreissig, W.;
- Kulikov, D. V.;
- Pezoldt, J.;
- Skorupa, W.;
- Trushin, Yu. V.;
- Kharlamov, V. S.;
- Tsigankov, D. N.
Publication type:
Article
Light-emitting silicon pn diodes.
Published in:
Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 4, p. 471, doi. 10.1007/s00339-003-2406-z
By:
- Dekorsy, T.;
- Sun, J.M.;
- Skorupa, W.;
- Schmidt, B.;
- Helm, M.
Publication type:
Article
Group-IV nanocluster formation by ion-beam synthesis.
Published in:
Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 7, p. 1049, doi. 10.1007/s00339-002-1947-x
By:
- Skorupa, W.;
- Rebohle, L.;
- Gebel, T.
Publication type:
Article
Synthesis of nano-sized SiC precipitates in Si by simultaneous dual-beam implantation of C[sup +] and Si[sup +] ions.
Published in:
Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 5, p. 827
By:
- Kögler, R.;
- Eichhorn, F.;
- Kaschny, J.R.;
- Mücklich, A.;
- Reuther, H.;
- Skorupa, W.;
- Serre, C.;
- Perez-Rodriguez, A.
Publication type:
Article
Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.
Published in:
Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 5, p. 823, doi. 10.1007/s00339-002-1963-x
By:
- Kaschieva, S.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Buried (Fe[sub 1-x] Co[sub x] )Si[sub 2] layers with variable band gap formed by ion beam synthesis.
Published in:
Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 2, p. 155, doi. 10.1007/BF01575713
By:
- Panknin, D.;
- Wieser, E.;
- Skorupa, W.;
- Henrion, W.;
- Lange, H.
Publication type:
Article
Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 34
By:
- Tiagulskyi, S. I.;
- Nazarov, A. N.;
- Gordienko, S. O.;
- Vasin, A. V.;
- Rusavsky, A. V.;
- Nazarova, T. M.;
- Gomeniuk, Yu. V.;
- Rudko, G. V.;
- Lysenko, V. S.;
- Rebohle, L.;
- Voelskow, M.;
- Skorupa, W.;
- Koshka, Y.
Publication type:
Article
Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 4, p. 98, doi. 10.15407/spqeo11.04.319
By:
- Nazarov, A. N.;
- Osiyuk, I. N.;
- Tiagulskyi, S. I.;
- Lysenko, V. S.;
- Tyagulskyy, I. P.;
- Torbin, V. N.;
- Omelchuk, V. V.;
- Nazarova, T. M.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2005, v. 8, n. 1, p. 90, doi. 10.15407/spqeo8.01.090
By:
- Nazarov, A. N.;
- Skorupa, W.;
- Vovk, Ja. N.;
- Osiyuk, I. N.;
- Tkachenko, A. S.;
- Tyagulskii, I. P.;
- Lysenko, V. S.;
- Gebel, T.;
- Rebohle, L.;
- Yankov, R. A.;
- Nazarova, T. M.
Publication type:
Article
Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.
Published in:
Semiconductors, 2003, v. 37, n. 4, p. 462, doi. 10.1134/1.1568469
By:
- Tyschenko, I. E.;
- Talochkin, A. B.;
- Cherkov, A. G.;
- Zhuravlev, K. S.;
- Misiuk, A.;
- Voelskow, M.;
- Skorupa, W.
Publication type:
Article
Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.
Published in:
Semiconductors, 2001, v. 35, n. 2, p. 125, doi. 10.1134/1.1349916
By:
- Tyschenko, I. E.;
- Zhuravlev, K. S.;
- Vandyshev, E. N.;
- Misiuk, A.;
- Yankov, R. A.;
- Rebohle, L.;
- Skorupa, W.
Publication type:
Article
Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.
Published in:
Semiconductors, 2000, v. 34, n. 1, p. 21, doi. 10.1134/1.1187944
By:
- Kachurin, G. A.;
- Rebohle, L.;
- Tyschenko, I. E.;
- Volodin, V. A.;
- Voelskow, M.;
- Skorupa, W.;
- Froeb, H.
Publication type:
Article
Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.
Published in:
Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595
By:
- Kachurin, G. A.;
- Leıer, A. F.;
- Zhuravlev, K. S.;
- Tyschenko, I. E.;
- Gutakovskiı, A. K.;
- Volodin, V. A.;
- Skorupa, W.;
- Yankov, R. A.
Publication type:
Article
Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions
Published in:
Semiconductors, 1998, v. 32, n. 4, p. 392, doi. 10.1134/1.1187417
By:
- Kachurin, G. A.;
- Rebohle, L.;
- Skorupa, W.;
- Yankov, R. A.;
- Tyschenko, I. E.;
- Froeb, H.;
- Boehme, T.;
- Leo, K.
Publication type:
Article
Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.
Published in:
Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231
By:
- Kachurin, G. A.;
- Tyschenko, I. E.;
- Zhuravlev, K. S.;
- Pazdnikov, N. A.;
- Volodin, V. A.;
- Gutakovskiı, A. K.;
- Leıer, A. F.;
- Skorupa, W.;
- Yankov, R. A.
Publication type:
Article
Highly efficient silicon light emitting diodes produced by doping engineering.
Published in:
Frontiers of Optoelectronics, 2012, v. 5, n. 1, p. 7, doi. 10.1007/s12200-012-0226-5
By:
- Sun, Jiaming;
- Helm, M.;
- Skorupa, W.;
- Schmidt, B.;
- Mücklich, A.
Publication type:
Article

Works by Skorupa, W.

Formation of InAs quantum dots in silicon by sequential ion implantation and flash lamp annealing.

Physical limitations of the electroluminescence mechanism in terbium-based light emitters: matrix and layer thickness dependence.

Blue electroluminescence of ytterbium clusters in SiO<sub>2</sub> by co-operative up-conversion.

Electroluminescence (at 316 nm) and electrical stability of a MOS light-emitting device operated at different temperatures.

Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices.

Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO<sub>2</sub> layers.

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes.

Transient behavior of the strong violet electroluminescence of Ge-implanted SiO[sub 2] layers.

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements.

Płucne objawy raka jądra (kto pierwszy powinien rozpoznać)?

Negative Magneto- and Electroresistance of Silicon Films with Superconducting Nanoprecipitates: The Role of Inelastic Cotunneling.

Comparative Study of SIMOX Structures Using Four Analytical Techniques.

SiO compound formation by oxygen ion implantation into silicon.

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer.

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors.

Fabrication of Si<sub>1-x</sub>Ge<sub>x</sub> Alloy on Silicon by Ge-Ion-Implantation and Short-Time-Annealing.

Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing.

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy.

Theoretical description of high-temperature implantation of silicon carbide with N[sup +] and Al[sup +] ions.

High-temperature high-dose implantation of N[sup +] and Al[sup +] ions in 6H–SiC.

Light-emitting silicon pn diodes.

Group-IV nanocluster formation by ion-beam synthesis.

Synthesis of nano-sized SiC precipitates in Si by simultaneous dual-beam implantation of C[sup +] and Si[sup +] ions.

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation.

Buried (Fe[sub 1-x] Co[sub x] )Si[sub 2] layers with variable band gap formed by ion beam synthesis.

Electroluminescent properties of Tb-doped carbon-enriched silicon oxide.

Electrical and light-emitting properties of silicon dioxide co-implanted by carbon and silicon ions.

Modification of electroluminescence and charge trapping in germanium implanted metal-oxide silicon light-emitting diodes with plasma treatment.

Properties of Ge Nanocrystals Formed by Implantation of Ge[sup +] Ions into SiO[sub 2] Films with Subsequent Annealing under Hydrostatic Pressure.

Study of Photoluminescence of SiO[sub x]N[sub y] Films Implanted with Ge[sup +] Ions and Annealed under the Conditions of Hydrostatic Pressure.

Formation of Photoluminescence Centers During Annealing of SiO[sub 2] Layers Implanted with Ge Ions.

Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.

Short-wavelength photoluminescence of SIO2 layers Implanted with high doses of Si+, Ge+, and Ar+ ions

Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.

Highly efficient silicon light emitting diodes produced by doping engineering.