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INFLUENCE OF THE COMPOSITION TO THE PHYSICAL PROPERTIES OF NaF-LiF-LaF<sub>3</sub> MELT LIQUID SYSTEMS.
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- Nuclear Physics & Atomic Energy, 2013, v. 14, n. 2, p. 154
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- Article
PHYSICAL PROPERTIES OF THE EUTECTIC NaF-LiF-LaF<sub>3</sub> MELT IONIC LIQUID SYSTEM.
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- Nuclear Physics & Atomic Energy, 2012, v. 13, n. 2, p. 153
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- Article
Energy band gap and electrical conductivity of Cd<sub>1-x</sub>Mn<sub>x</sub>Te alloys with different manganese content.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 4, p. 421
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- Article
Detector with High Internal Photocurrent Gain Based on ZnO:N.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 681, doi. 10.12693/APhysPolA.119.681
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- Article
Viscosity of Sb-Sn melts.
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- Inorganic Materials, 2010, v. 46, n. 8, p. 833, doi. 10.1134/S0020168510080054
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- Article
Features of the mechanism of electrical conductivity of semiinsulating CdTe crystals.
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- Semiconductors, 2010, v. 44, n. 6, p. 699, doi. 10.1134/S1063782610060023
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- Article
The density and interdiffusion coefficients of bismuth-tin melts of eutectic and near-eutectic composition.
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- High Temperature, 2010, v. 48, n. 2, p. 188, doi. 10.1134/S0018151X10020082
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- Article
Special features of the electrical characteristics of CdTe-based Schottky diodes with almost intrinsic conduction.
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- Technical Physics Letters, 2006, v. 32, n. 12, p. 1056, doi. 10.1134/S1063785006120182
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- Article
Special Features of Charge Transport in Schottky Diodes Based on Semi-insulating CdTe.
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- Semiconductors, 2005, v. 39, n. 6, p. 722, doi. 10.1134/1.1944866
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- Article
Electrical Conductivity and Thermoelectric Power of Liquid Tellurium Doped with 3d Transition Metals.
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- Semiconductors, 2004, v. 38, n. 12, p. 1365, doi. 10.1134/1.1836052
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- Article
A Photoelectric Study of Charge-Carrier Collection in CdZnTe-Based Detectors of X-ray and γ Radiation.
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- Semiconductors, 2004, v. 38, n. 8, p. 981, doi. 10.1134/1.1787123
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- Article
Specific Features of Conductivity of Cd[sub 1 – x]Zn[sub x]Te and Cd[sub 1 – x]Mn[sub x]Te Single Crystals.
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- Semiconductors, 2003, v. 37, n. 12, p. 1373, doi. 10.1134/1.1634656
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- Article
Electrical Conductivity of Liquid Sb and Bi Doped with 3d Transition Metals.
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- Inorganic Materials, 2003, v. 39, n. 8, p. 811, doi. 10.1023/A:1025017111565
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- Article
Electrical Performance of HgInTe Surface-Barrier Photodiodes.
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- Technical Physics, 2003, v. 48, n. 5, p. 647, doi. 10.1134/1.1576485
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- Article
Generation–Recombination Centers in CdTe:V.
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- Semiconductors, 2003, v. 37, n. 4, p. 452, doi. 10.1134/1.1568467
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- Article
Electrical Properties of Surface-Barrier Diodes Based on CdZnTe.
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- Semiconductors, 2003, v. 37, n. 2, p. 227, doi. 10.1134/1.1548671
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- Article
Electronic Properties of Liquid Tl[sub 2]Te,Tl[sub 2]Se,Ag[sub 2]Te,Cu[sub 2]Te, and Cu[sub 2]Se Alloys.
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- Semiconductors, 2002, v. 36, n. 10, p. 1123, doi. 10.1134/1.1513855
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- Article
Electrical Properties of Narrow-Gap HgMnTe Schottky Diodes.
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- Semiconductors, 2002, v. 36, n. 10, p. 1138, doi. 10.1134/1.1513859
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- Article
Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes.
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- Semiconductors, 1997, v. 31, n. 2, p. 164, doi. 10.1134/1.1187100
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- Article
The Semiconductor-Metal Transition in Liquid Tellurium.
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- Physica Status Solidi (B), 1982, v. 113, n. 2, p. 453, doi. 10.1002/pssb.2221130207
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- Article