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Universal phonon mean free path spectra in crystalline semiconductors at high temperature.
- Published in:
- Scientific Reports, 2013, p. 1, doi. 10.1038/srep02963
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- Article
Second-Harmonic Generation of Blue Light in GaN Waveguides.
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- Applied Sciences (2076-3417), 2018, v. 8, n. 8, p. 1218, doi. 10.3390/app8081218
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- Article
Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures.
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- Advanced Optical Materials, 2023, v. 11, n. 1, p. 1, doi. 10.1002/adom.202201535
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- Article
Tracking of Point Defects in the Full Compositional Range of AlGaN via Photoluminescence Spectroscopy.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202200390
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- Article
Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 24, p. 1, doi. 10.1002/pssa.202000465
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- Article
Optical signatures of silicon and oxygen related DX centers in AlN.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201600749
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- Article
Growth and characterization of Al<sub> x</sub>Ga<sub>1− x</sub>N lateral polarity structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1039, doi. 10.1002/pssa.201431740
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- Article
Characterization of dislocation arrays in AlN single crystals grown by PVT.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1545, doi. 10.1002/pssa.201000957
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- Article
Sharp bound and free exciton lines from homoepitaxial AlN.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 7, p. 1520, doi. 10.1002/pssa.201000947
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- Article
On Ni/Au Alloyed Contacts to Mg-Doped GaN.
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- Journal of Electronic Materials, 2018, v. 47, n. 1, p. 305, doi. 10.1007/s11664-017-5775-3
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- Article
Characterization of Threading Dislocations in PVT-Grown AlN Substrates via x-Ray Topography and Ray Tracing Simulation.
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- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 838, doi. 10.1007/s11664-013-2968-2
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- Article
Fermi Level Control of Point Defects During Growth of Mg-Doped GaN.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 815, doi. 10.1007/s11664-012-2342-9
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- Article
Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation.
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- Advanced Materials, 2012, v. 24, n. 31, p. 4261, doi. 10.1002/adma.201104891
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- Article
Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012).
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- Advanced Materials, 2012, v. 24, n. 31, p. 4221, doi. 10.1002/adma.201290188
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- Article
Direct Observation of Inversion Domain Boundaries of GaN on c-Sapphire at Sub-ångstrom Resolution.
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- Advanced Materials, 2008, v. 20, n. 11, p. 2162, doi. 10.1002/adma.200702522
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- Article
Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy.
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- 2020
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- Abstract
Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy.
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- 2020
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- Abstract
Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS.
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- Microscopy & Microanalysis, 2017, v. 23, p. 1444, doi. 10.1017/S1431927617007887
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- Article
Direct Observation of the Polarity Control Mechanism in Aluminum Nitride Grown on Sapphire by Aberration Corrected Scanning Transmission Electron Microscopy.
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- Microscopy & Microanalysis, 2014, v. 20, n. S3, p. 162, doi. 10.1017/S1431927614002530
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- Article
HIGH FIELD TRANSPORT IN AlN.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 155, doi. 10.1142/S0129156404002284
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- Article
Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900705
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- Article
Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals.
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- Physica Status Solidi (B), 2017, v. 254, n. 9, p. n/a, doi. 10.1002/pssb.201700077
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- Article
Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN.
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- Physica Status Solidi (B), 2012, v. 249, n. 3, p. 511, doi. 10.1002/pssb.201100381
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- Article
Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 1, p. 1, doi. 10.1002/pssr.202200323
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- Article
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 6, p. 1, doi. 10.1002/pssr.202100619
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- Article