OpenURL Connection Search

Select item for more details and to access through your institution.

Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 908, doi. 10.1134/S1063785008110023
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Yagovkina, M. A.;
- Tsatsul'nikov, A. F.
Publication type:
Article
InGaAlN heterostructures for LEDs grown on patterned sapphire substrates.
Published in:
Technical Physics Letters, 2008, v. 34, n. 11, p. 924, doi. 10.1134/S1063785008110072
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Lundina, E. Yu.;
- Sakharov, A. V.;
- Troshkov, S. I.;
- Tsatsul'nikov, A. F.
Publication type:
Article
Structural Characterization of Triterpene Saponins from Manchurian Aralia by High Resolution Liquid Chromatography–Mass Spectrometry.
Published in:
Journal of Analytical Chemistry, 2019, v. 74, n. 11, p. 1113, doi. 10.1134/S1061934819110108
By:
- Sinitsyn, M. Yu.;
- Aksenov, A. V.;
- Taranchenko, M. V.;
- Rodin, I. A.;
- Stavrianidi, A. N.;
- Antokhin, A. M.;
- Shpigun, O. A.
Publication type:
Article
Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency.
Published in:
Semiconductors, 2015, v. 49, n. 11, p. 1516, doi. 10.1134/S1063782615110238
By:
- Tsatsulnikov, A.;
- Lundin, W.;
- Sakharov, A.;
- Zavarin, E.;
- Usov, S.;
- Nikolaev, A.;
- Sinitsyn, M.;
- Cherkashin, N.;
- Karpov, S.
Publication type:
Article
Structural and optical properties of InAlN/GaN distributed Bragg reflectors.
Published in:
Semiconductors, 2010, v. 44, n. 7, p. 949, doi. 10.1134/S1063782610070201
By:
- Usov, S. O.;
- Zavarin, E. E.;
- Tsatsul’nikov, A. F.;
- Lundin, V. V.;
- Sakharov, A. V.;
- Nikolaev, A. E.;
- Sinitsyn, M. A.;
- Kryzhanovskaya, N. V.;
- Troshkov, S. I.;
- Ledentsov, N. N.
Publication type:
Article
Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes.
Published in:
Semiconductors, 2010, v. 44, n. 1, p. 123, doi. 10.1134/S1063782610010215
By:
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Sakharov, A. V.;
- Usov, S. O.;
- Nikolaev, A. E.;
- Davydov, D. V.;
- Cherkashin, N. A.;
- Tsatsulnikov, A. F.
Publication type:
Article
Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers.
Published in:
Semiconductors, 2009, v. 43, n. 7, p. 963, doi. 10.1134/S1063782609070276
By:
- Lundin, W. V.;
- Sakharov, A. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Mikhailovsky, G. A.;
- Brunkov, P. N.;
- Goncharov, V. V.;
- Ber, B. Ya.;
- Kazantsev, D. Yu.;
- Tsatsulnikov, A. F.
Publication type:
Article
Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs.
Published in:
Semiconductors, 2009, v. 43, n. 6, p. 812, doi. 10.1134/S1063782609060232
By:
- Sakharov, A. V.;
- Lundin, W. V.;
- Zavarin, E. E.;
- Sinitsyn, M. A.;
- Nikolaev, A. E.;
- Usov, S. O.;
- Sizov, V. S.;
- Mikhailovsky, G. A.;
- Cherkashin, N. A.;
- Hytch, M.;
- Hue, F.;
- Yakovlev, E. V.;
- Lobanova, A. V.;
- Tsatsulnikov, A. F.
Publication type:
Article
Energy characteristics of excitons in structures based on InGaN alloys.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 720, doi. 10.1134/S1063782608060146
By:
- Usov, S.;
- Tsatsul’nikov, A.;
- Lundin, V.;
- Sakharov, A.;
- Zavarin, E.;
- Sinitsyn, M.;
- Ledentsov, N.
Publication type:
Article
Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask.
Published in:
Semiconductors, 1997, v. 31, n. 4, p. 401
By:
- Proékt, L. B.;
- Kaliteevskiı, M. A.;
- Kantor, V. B.;
- Piotrovskiı,, D. A.;
- Sinitsyn, M. A.;
- Yavich, B. S.
Publication type:
Article
Some Astronomical Aspects of the Study of Lunar Regolith.
Published in:
Earth, Moon & Planets, 2013, v. 110, n. 1-2, p. 29, doi. 10.1007/s11038-012-9408-9
By:
- Sinitsyn, M.
Publication type:
Article
Thermal analysis of turboexpander-compressor module on gas-static bearings in MSC.PATRAN-NASTRAN system.
Published in:
Chemical & Petroleum Engineering, 2010, v. 46, n. 9/10, p. 537, doi. 10.1007/s10556-011-9373-6
By:
- Zverev, I.;
- Sinitsyn, M.
Publication type:
Article
Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source.
Published in:
Technical Physics Letters, 2016, v. 42, n. 5, p. 539, doi. 10.1134/S106378501605028X
By:
- Lundin, W.;
- Zavarin, E.;
- Brunkov, P.;
- Yagovkina, M.;
- Sakharov, A.;
- Sinitsyn, M.;
- Ber, B.;
- Kazantsev, D.;
- Tsatsulnikov, A.
Publication type:
Article
Double-cross epitaxial overgrowth of nonpolar gallium nitride layers.
Published in:
Technical Physics Letters, 2012, v. 38, n. 3, p. 265, doi. 10.1134/S1063785012030285
By:
- Lundin, W.;
- Zavarin, E.;
- Rozhavskaya, M.;
- Nikolaev, A.;
- Sakharov, V.;
- Troshkov, S.;
- Sinitsyn, M.;
- Davydov, D.;
- Kulagina, M.;
- Brunkov, P.;
- Tsatsulnikov, A.
Publication type:
Article
Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide.
Published in:
Technical Physics Letters, 2012, v. 38, n. 3, p. 297, doi. 10.1134/S1063785012030261
By:
- Kukushkin, S.;
- Osipov, A.;
- Zhukov, S.;
- Zavarin, E.;
- Lundin, W.;
- Sinitsyn, M.;
- Rozhavskaya, M.;
- Tsatsulnikov, A.;
- Troshkov, S.;
- Feoktistov, N.
Publication type:
Article
Enhancement of Photoluminescence Intensity in MOCVD-Grown GaAs/AlGaAs Quantum Wells by Hydrogenation.
Published in:
Physica Status Solidi (B), 1993, v. 178, n. 1, p. K57, doi. 10.1002/pssb.2221780137
By:
- Bumai, Y. A.;
- Yavich, B. S.;
- Sinitsyn, M. A.;
- Ulyashin, A. G.;
- Shlopak, N. V.;
- Krasovskii, V. V.
Publication type:
Article
Influence of Linear and Point Defects on the Hypersonic Attenuation by Free Carriers in Semiconductors.
Published in:
Physica Status Solidi (B), 1973, v. 58, n. 1, p. K89, doi. 10.1002/pssb.2220580164
By:
- Glauberman, A. E.;
- Ruvinskii, M. A.;
- Sinitsyn, A. M.
Publication type:
Article

Found: 17