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Design of high-speed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 10, p. 1183, doi. 10.1049/iet-pel.2016.1009
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- Article
Experimental Comparison of High-Speed Gate Driver Design for 1.2-kV/120-A Si IGBT and SiC MOSFET Modules.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 9, p. 979, doi. 10.1049/iet-pel.2016.0668
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- Publication type:
- Article
Distributed-series compensator for controlling voltage in distribution line with clustered distributed generations.
- Published in:
- IEEJ Transactions on Electrical & Electronic Engineering, 2009, v. 4, n. 3, p. 404, doi. 10.1002/tee.20424
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- Article