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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2024, v. 261, n. 5, p. 1, doi. 10.1002/pssb.202400060
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Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 7, p. 1, doi. 10.1002/pssr.202300035
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- Article
Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2022, v. 259, n. 10, p. 1, doi. 10.1002/pssb.202200183
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- Article
Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam.
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- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-74362-9
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- Article
High Pressure Processing of Ion Implanted GaN.
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- Electronics (2079-9292), 2020, v. 9, n. 9, p. 1380, doi. 10.3390/electronics9091380
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- Article