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Depletion Layer Built‐In Field at (1−100), (0001), and (000−1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting.
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- Advanced Materials Interfaces, 2019, v. 6, n. 4, p. N.PAG, doi. 10.1002/admi.201801497
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Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions.
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- Electronics (2079-9292), 2020, v. 9, n. 9, p. 1481, doi. 10.3390/electronics9091481
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- Article
Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy.
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- Optica Applicata, 2020, v. 50, n. 2, p. 323, doi. 10.37190/oa200215
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Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes.
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- Optica Applicata, 2020, v. 50, n. 2, p. 311, doi. 10.37190/oa200214
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- Article
Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers.
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- Optica Applicata, 2006, v. 36, n. 2/3, p. 181
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Bidirectional light-emitting diode as a visible light source driven by alternating current.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-43335-7
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- Article
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.
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- Materials (1996-1944), 2022, v. 15, n. 17, p. 5929, doi. 10.3390/ma15175929
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- Article
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs.
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- Materials (1996-1944), 2022, v. 15, n. 1, p. 237, doi. 10.3390/ma15010237
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- Article