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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector.
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- Journal of Communications Technology & Electronics, 2020, v. 65, n. 3, p. 316, doi. 10.1134/S1064226920030122
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- Article
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1024, doi. 10.1134/S1064226919090171
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- Article
A Megapixel Matrix Photodetector of the Middle Infrared Range.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1011, doi. 10.1134/S1064226919090043
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- Article
Dependence of the electrical parameters of MBE-grown Cd<sub> x </sub>Hg<sub>1 − x </sub>Te films on the level of doping with indium.
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- Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031
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- Article
Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy.
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- Semiconductors, 2008, v. 42, n. 6, p. 651, doi. 10.1134/S1063782608060043
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- Article
The Effect of the Growth Temperature on the Passivating Properties of the Al<sub>2</sub>O<sub>3</sub> Films Formed by Atomic Layer Deposition on the CdHgTe Surface.
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- Technical Physics Letters, 2020, v. 46, n. 8, p. 741, doi. 10.1134/S1063785020080064
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- Article
Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments.
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- Semiconductors, 2021, v. 55, n. 5, p. 461, doi. 10.1134/S1063782621040175
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- Article
HgCdTe quantum wells grown by molecular beam epitaxy.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2007, v. 10, n. 4, p. 47
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- Article
Cesium-137 in Crimean Salt Waters.
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- Water Resources, 2019, v. 46, n. 3, p. 422, doi. 10.1134/S0097807819030151
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- Article
Rating Water Quality in Sevastopol Bay by the Fluxes of Pollutant Deposition in Bottom Sediments.
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- Water Resources, 2018, v. 45, n. 2, p. 222, doi. 10.1134/S0097807818020069
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- Article
Observation of Antiphase Domains in Cd<sub>x</sub>Hg<sub>1 – </sub><sub>x</sub>Te Films on Silicon by the Phase Contrast Method in Atomic Force Microscopy.
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- JETP Letters, 2005, v. 82, n. 5, p. 292, doi. 10.1134/1.2130915
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- Article
Admittance of barrier nanostructures based on MBE HgCdTe.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z
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- Article
Unipolar superlattice structures based on MBE HgCdTe for infrared detection.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y
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- Article
Differentiated Estimation of the <sup>137</sup>Cs Content on the Biogenic and Lithogenic Suspended Matter in the Black Sea.
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- Geochemistry International, 2023, v. 61, n. 6, p. 650, doi. 10.1134/S0016702923040122
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- Article
Quantitative Assay of B. pertussis Lipopolysaccharide.
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- Bulletin of Experimental Biology & Medicine, 2022, v. 172, n. 6, p. 718, doi. 10.1007/s10517-022-05463-w
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- Article
Photoluminescence of CdHgTe epilayers grown on silicon substrates.
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- Technical Physics Letters, 2010, v. 36, n. 12, p. 1085, doi. 10.1134/S1063785010120060
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- Article
Effect of annealing on the optical and photoelectrical properties of Cd<sub> x</sub>Hg<sub>1 − x</sub>Te heteroepitaxial structures for the middle infrared range.
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- Technical Physics Letters, 2009, v. 35, n. 2, p. 147, doi. 10.1134/S1063785009020151
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- Article
Ion-beam-induced modification of the electrical properties of vacancy-doped mercury cadmium telluride.
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- Technical Physics Letters, 2008, v. 34, n. 11, p. 981, doi. 10.1134/S1063785008110242
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- Article
1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films.
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- Technical Physics Letters, 2007, v. 33, n. 6, p. 471, doi. 10.1134/S1063785007060089
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- Article
Enhancement of the efficiency of i–n-GaN light-emitting diodes by electrochemical etching.
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- Technical Physics Letters, 1999, v. 25, n. 1, p. 65, doi. 10.1134/1.1262358
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- Article
Efficiency and reliability of metal–insulator–semiconductor radiative structures based on broad-band semiconductors with unipolar conductivity.
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- Technical Physics Letters, 1997, v. 23, n. 11, p. 825, doi. 10.1134/1.1261897
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- Article
CdS–GaN heterostructure photodetector with switching and memory.
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- Technical Physics Letters, 1997, v. 23, n. 10, p. 807, doi. 10.1134/1.1261809
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- Article
ZnTe–GaN heterostructure switching device.
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- Technical Physics Letters, 1997, v. 23, n. 10, p. 809, doi. 10.1134/1.1261810
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- Article
DELSY project: status and development.
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- Journal of Synchrotron Radiation, 2003, v. 10, n. 5, p. 349, doi. 10.1107/S0909049503011117
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- Article
Experimental Study of Departure from Nucleate Boiling on the Surface of a Molten Core Catcher Under Conditions of Boiling Borated Water with Debris.
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- Atomic Energy, 2023, v. 133, n. 3, p. 182, doi. 10.1007/s10512-023-00992-7
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- Article
Severe Accident Management at NPP-2006 Reactor Plants (Leningrad NPP-2).
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- Atomic Energy, 2023, v. 133, n. 3, p. 154, doi. 10.1007/s10512-023-00988-3
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- Article
The Influence of Hydrogen on the Optical Transparency of Palladium Layers.
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- Optics & Spectroscopy, 2020, v. 128, n. 5, p. 596, doi. 10.1134/S0030400X20050148
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- Article
Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
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- Journal of Communications Technology & Electronics, 2023, v. 68, p. S132, doi. 10.1134/S1064226923140176
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- Article
Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1036, doi. 10.1134/S1064226923090279
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- Article
Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 3, p. 334, doi. 10.1134/S1064226923030208
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- Article
Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe.
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 3, p. 308, doi. 10.1134/S1064226922030172
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- Article
Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers.
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- Journal of Communications Technology & Electronics, 2021, v. 66, n. 3, p. 337, doi. 10.1134/S1064226921030219
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- Article
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 3, p. 289, doi. 10.1134/S1064226919030197
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- Article
Linear Minimax Filtering of a Stationary Random Process under the Condition of the Interval Fuzziness in the State Matrix of the System with a Restricted Variance.
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- Journal of Communications Technology & Electronics, 2018, v. 63, n. 8, p. 902, doi. 10.1134/S106422691807015X
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- Article
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown <italic>n</italic>-Hg<sub>1 - <italic>x</italic></sub>Cd<sub><italic>x</italic></sub>Te (<italic>x</italic> = 0.22-0.23) with the Al<sub>2</sub>O<sub>3</sub> Insulator.
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- Journal of Communications Technology & Electronics, 2018, v. 63, n. 3, p. 281, doi. 10.1134/S106422691803021X
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- Article
A Hydrogen Sensor Based on Pd/InP Structures.
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- Journal of Applied Spectroscopy, 2022, v. 89, n. 5, p. 918, doi. 10.1007/s10812-022-01448-9
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- Article
Calculation of Pressure Drop in Unirrigated Packed Contact Devices Applying ANSYS Fluent Software.
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- Chemical & Petroleum Engineering, 2018, v. 54, n. 1/2, p. 130, doi. 10.1007/s10556-018-0451-x
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- Article
Introduction of Crossflow Drop Traps for Intensifying Mass Transfer Apparatus Operation.
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- Chemical & Petroleum Engineering, 2013, v. 49, n. 5/6, p. 364, doi. 10.1007/s10556-013-9756-y
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- Article
The effective mass of electrons in (InSb)<sub>x</sub>·(InTe)<sub>1−x</sub> crystals.
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- Physica Status Solidi (B), 1966, v. 18, n. 2, p. 677, doi. 10.1002/pssb.19660180219
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- Article
On the Second Conduction Band in Indium Antimonide.
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- Physica Status Solidi (B), 1966, v. 14, n. 2, p. K195, doi. 10.1002/pssb.19660140253
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- Article
Effective Mass of Electrons in n-GaAs.
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- Physica Status Solidi (B), 1965, v. 12, n. 2, p. K93, doi. 10.1002/pssb.19650120241
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- Article
Phonon Drag in p-GaAs.
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- Physica Status Solidi (B), 1965, v. 12, n. 2, p. K89, doi. 10.1002/pssb.19650120240
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- Article
Dependence of the Thermal E.M.F. on the Hole Concentration in Gallium Arsenide Crystals.
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- Physica Status Solidi (B), 1965, v. 8, n. 3, p. K155, doi. 10.1002/pssb.19650080337
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- Article
Polyoxometalate chemistry at volcanoes: discovery of a novel class of polyoxocuprate nanoclusters in fumarolic minerals.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-63109-1
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- Article
An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4599, doi. 10.1007/s11664-021-09001-8
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- Article
Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2323, doi. 10.1007/s11664-021-08752-8
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- Article
Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques.
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- Journal of Electronic Materials, 2020, v. 49, n. 5, p. 3202, doi. 10.1007/s11664-020-08005-0
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- Article
Synthesis of tritium-labeled 2′,3′-dideoxy-2′,3′-didehydrothymidine.
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- Journal of Labelled Compounds & Radiopharmaceuticals, 2007, v. 50, n. 5/6, p. 585, doi. 10.1002/jlcr.1287
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- Article
Study of the reactions of carbohydrates with tritium under solid-state catalytic hydrogenation condition.
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- Journal of Labelled Compounds & Radiopharmaceuticals, 2007, v. 50, n. 5/6, p. 583, doi. 10.1002/jlcr.1286
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- Article
Seasonal Dynamics of Microbial Processes in Bottom Sediments of the Sevastopol Coastal Area.
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- Oceanology (00014370), 2018, v. 58, n. 6, p. 909, doi. 10.1134/S0001437018070032
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- Article