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X-ray study of dopant state in highly doped semiconductor single crystals.
Published in:
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 62
By:
- Shul'pina, I. L.;
- Kyutt, R. N.;
- Ratnikov, V. V.;
- Prokhorov, I. A.;
- Bezbakh, I. Zh.;
- Shcheglov, M. P.
Publication type:
Article
X-ray Topography Contrast of Edge Dislocations Perpendicular to the 6H-SiC Crystal Surface.
Published in:
Technical Physics Letters, 2005, v. 31, n. 6, p. 491, doi. 10.1134/1.1969776
By:
- Okunev, A. O.;
- Shul'pina, I. L.
Publication type:
Article
Silicon Structures with Dielectric Insulation Obtained by Vertical Anisotropic Etching.
Published in:
Technical Physics Letters, 2001, v. 27, n. 5, p. 381, doi. 10.1134/1.1376758
By:
- Guk, E. G.;
- Tkachenko, A. G.;
- Tokranova, N. A.;
- Granitsyna, L. S.;
- Astrova, E. V.;
- Podlaskin, B. G.;
- Nashchekin, A. V.;
- Shul’pina, I. L.;
- Rutkovskiı, S. V.
Publication type:
Article
Real Structure of a Microchannel Silicon Studied by X-ray Diffraction.
Published in:
Technical Physics Letters, 2001, v. 27, n. 1, p. 41, doi. 10.1134/1.1345161
By:
- Astrova, E. V.;
- Ratnikov, V. V.;
- Remenyuk, A. D.;
- Tkachenko, A. G.;
- Shul’pina, I. L.
Publication type:
Article
Nondestructive Diagnostics of Microchannel (Macroporous) Silicon by X-ray Topography.
Published in:
Technical Physics Letters, 2000, v. 26, n. 12, p. 1087, doi. 10.1134/1.1337262
By:
- Astrova, E. V.;
- Remenyuk, A. D.;
- Tkachenko, A. G.;
- Shul’pina, I. L.
Publication type:
Article
Real structure of Cd[sub 2]Nb[sub 2]O[sub 7] pyrochlore single crystals.
Published in:
Technical Physics Letters, 1999, v. 25, n. 7, p. 561, doi. 10.1134/1.1262553
By:
- Shul’pina, I. L.;
- Kolpakova, N. N.;
- Shcheglov, M. P.;
- Lebedev, A. O.
Publication type:
Article
Evolution of domains and thermal hysteresis effects in the pyrochlore-structure ferroelectric Cd[sub 2]Nb[sub 2]O[sub 7].
Published in:
Technical Physics Letters, 1997, v. 23, n. 12, p. 972, doi. 10.1134/1.1261950
By:
- Kolpakova, N. N.;
- Shul’pina, I. L.;
- Shchepan’ska, L.;
- Piskunovich, P.
Publication type:
Article
Section Methods of X-Ray Diffraction Topography.
Published in:
Technical Physics, 2023, v. 68, n. 12, p. 778, doi. 10.1134/S1063784223080340
By:
- Shul'pina, I. L.;
- Suvorov, E. V.;
- Smirnova, I. A.;
- Argunova, T. S.
Publication type:
Article
The Formation and Structure of Thermomigration Silicon Channels Doped with Ga.
Published in:
Technical Physics, 2021, v. 66, n. 3, p. 453, doi. 10.1134/S1063784221030178
By:
- Lomov, A. A.;
- Seredin, B. M.;
- Martyushov, S. Yu.;
- Zaichenko, A. N.;
- Shul'pina, I. L.
Publication type:
Article
Estimation of quality of GaAs substrates used for constructing semiconductor power devices.
Published in:
Technical Physics, 2014, v. 59, n. 10, p. 1566, doi. 10.1134/S1063784214100296
By:
- Shul'pina, I.;
- Ratnikov, V.;
- Kozlov, V.;
- Soldatenkov, F.;
- Voitovich, V.
Publication type:
Article
X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals.
Published in:
Technical Physics, 2010, v. 55, n. 4, p. 537, doi. 10.1134/S1063784210040183
By:
- Shul'pina, I. L.;
- Kyutt, R. N.;
- Ratnikov, V. V.;
- Prokhorov, I. A.;
- Bezbakh, I. Zh.;
- Shcheglov, M. P.
Publication type:
Article
Strains and Crystal Lattice Defects Arising in Macroporous Silicon under Oxidation.
Published in:
Semiconductors, 2002, v. 36, n. 9, p. 1033, doi. 10.1134/1.1507287
By:
- Astrova, E. V.;
- Ratnikov, V. V.;
- Remenyuk, A. D.;
- Shul’pina, I. L.
Publication type:
Article
Formation and Characterization of Concentration Inhomogeneities in Melt-Grown Crystals.
Published in:
Crystallography Reports, 2021, v. 66, n. 3, p. 387, doi. 10.1134/S1063774521030111
By:
- Korobeinikova, E. N.;
- Prokhorov, I. A.;
- Bezbakh, I. Zh.;
- Shul'pina, I. L.
Publication type:
Article
Blocks and residual stresses in sapphire rods of different crystallographic orientations grown by the Stepanov method.
Published in:
Crystallography Reports, 2015, v. 60, n. 3, p. 377, doi. 10.1134/S1063774515020145
By:
- Krymov, V.;
- Nosov, Yu.;
- Bakholdin, S.;
- Maslov, V.;
- Shul'pina, I.
Publication type:
Article
X-ray diffraction topography for materials science.
Published in:
Crystallography Reports, 2012, v. 57, n. 5, p. 661, doi. 10.1134/S106377451205015X
By:
- Shul'pina, I.;
- Prokhorov, I.
Publication type:
Article
The influence of thermal screens on the temperature distribution, thermal stress, and defect structure during growth of shaped sapphire crystals.
Published in:
Crystallography Reports, 2010, v. 55, n. 4, p. 703, doi. 10.1134/S1063774510040280
By:
- Bakholdin, S. I.;
- Krymov, V. M.;
- Nosov, Yu. G.;
- Shul'pina, I. L.;
- Denisov, A. V.;
- Sallum, M. I.;
- Vasil'ev, M. G.;
- Mamedov, V. M.;
- Yuferev, V. S.
Publication type:
Article
Growth of high-homogeneity GaSb:Te crystals for thermophotovoltaic energy converters.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 4, p. 666, doi. 10.1134/S1027451014040144
By:
- Serebryakov, Yu.;
- Sidorov, V.;
- Prokhorov, I.;
- Korobeinikova, E.;
- Vlasov, V.;
- Artem'ev, V.;
- Folomeev, V.;
- Shul'pina, I.;
- Pakhanov, N.
Publication type:
Article
Comparative studies of the features of the formation of impurity heterogeneity in GaSb:Te crystals in the case of directed crystallization under space and ground conditions.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2012, v. 6, n. 4, p. 604, doi. 10.1134/S1027451012070117
By:
- Serebryakov, Yu.;
- Vlasov, V.;
- Sidorov, V.;
- Prokhorov, I.;
- Shul'pina, I.;
- Korobeinikova, E.
Publication type:
Article
X-ray diffraction study of silicon single crystals highly doped with boron.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2010, v. 4, n. 1, p. 32, doi. 10.1134/S1027451010010064
By:
- Shul’pina, I.;
- Rouvimov, S.;
- Kyutt, R.
Publication type:
Article
Concentration and structural inhomogeneities in highly doped GaSb(Si) single crystals.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 6, p. 936, doi. 10.1134/S1027451009060160
By:
- Prokhorov, I.;
- Serebryakov, Yu.;
- Bezbakh, I.;
- Zakharov, B.;
- Ratnikov, V.;
- Shcheglov, M.;
- Shul’pina, I.
Publication type:
Article
X-ray topography study of microsegregation in crystals.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 3, p. 260, doi. 10.1134/S1027451007030056
By:
- Prokhorov, I.;
- Bezbakh, I.;
- Zakharov, B.;
- Shul’pina, I.
Publication type:
Article
X-ray study of structural features of GaSb(Si) single crystals grown using a set of diffraction methods under various heat and mass transfer conditions.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2007, v. 1, n. 3, p. 255, doi. 10.1134/S1027451007030044
By:
- Prokhorov, I.;
- Serebryakov, Yu.;
- Korobeinikova, E.;
- Zakharov, B.;
- Ratnikov, V.;
- Shul’pina, I.
Publication type:
Article
Structural Perfection and Composition of Gallium-Doped Thermomigration Silicon Layers.
Published in:
Technical Physics Letters, 2020, v. 46, n. 3, p. 279, doi. 10.1134/S1063785020030268
By:
- Lomov, A. A.;
- Seredin, B. M.;
- Martyushov, S. Yu.;
- Zaichenko, A. N.;
- Simakin, S. G.;
- Shul'pina, I. L.
Publication type:
Article

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