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Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System.
Published in:
Journal of Electronic Materials, 2020, v. 49, n. 8, p. 4809, doi. 10.1007/s11664-020-08169-9
By:
- Sabbar, Abbas;
- Grant, Joshua M.;
- Grant, Perry C.;
- Dou, Wei;
- Alharthi, Bader;
- Li, Baohua;
- Yurtsever, Fatma;
- Ghetmiri, Seyed Amir;
- Mortazavi, Mansour;
- Naseem, Hameed A.;
- Yu, Shui-Qing;
- Mosleh, Aboozar;
- Chen, Zhong
Publication type:
Article
Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications.
Published in:
Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-15631-7
By:
- Lai, Pengyu;
- Gonzalez, David;
- Madhusoodhanan, Syam;
- Sabbar, Abbas;
- Ahmed, Salahaldein;
- Dong, Binzhong;
- Wang, Jiangbo;
- Mantooth, H. Alan;
- Yu, Shui-Qing;
- Chen, Zhong
Publication type:
Article
High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules.
Published in:
Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-06858-5
By:
- Madhusoodhanan, Syam;
- Sabbar, Abbas;
- Tran, Huong;
- Lai, Pengyu;
- Gonzalez, David;
- Mantooth, Alan;
- Yu, Shui-Qing;
- Chen, Zhong
Publication type:
Article
Design and optimization of high temperature optocouplers as galvanic isolation.
Published in:
Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-021-04145-3
By:
- Sabbar, Abbas;
- Madhusoodhanan, Syam;
- Tran, Huong;
- Dong, Binzhong;
- Wang, Jiangbo;
- Mantooth, Alan;
- Yu, Shui-Qing;
- Chen, Zhong
Publication type:
Article
Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement.
Published in:
Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4561, doi. 10.1007/s11664-018-6315-5
By:
- Alharthi, Bader;
- Grant, Joshua M.;
- Dou, Wei;
- Grant, Perry C.;
- Mosleh, Aboozar;
- Du, Wei;
- Mortazavi, Mansour;
- Li, Baohua;
- Naseem, Hameed;
- Yu, Shui-Qing
Publication type:
Article
GePb Alloy Growth Using Layer Inversion Method.
Published in:
Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3733, doi. 10.1007/s11664-018-6233-6
By:
- Alahmad, Hakimah;
- Mosleh, Aboozar;
- Alher, Murtadha;
- Banihashemian, Seyedeh Fahimeh;
- Ghetmiri, Seyed Amir;
- Al-Kabi, Sattar;
- Du, Wei;
- Li, Bauhoa;
- Yu, Shui-Qing;
- Naseem, Hameed A.
Publication type:
Article
Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications.
Published in:
Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6251, doi. 10.1007/s11664-016-5028-x
By:
- Al-Kabi, Sattar;
- Ghetmiri, Seyed;
- Margetis, Joe;
- Du, Wei;
- Mosleh, Aboozar;
- Dou, Wei;
- Sun, Greg;
- Soref, Richard;
- Tolle, John;
- Li, Baohua;
- Mortazavi, Mansour;
- Naseem, Hameed;
- Yu, Shui-Qing
Publication type:
Article
Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications.
Published in:
Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6265, doi. 10.1007/s11664-016-5031-2
By:
- Dou, Wei;
- Ghetmiri, Seyed;
- Al-Kabi, Sattar;
- Mosleh, Aboozar;
- Zhou, Yiyin;
- Alharthi, Bader;
- Du, Wei;
- Margetis, Joe;
- Tolle, John;
- Kuchuk, Andrian;
- Benamara, Mourad;
- Li, Baohua;
- Naseem, Hameed;
- Mortazavi, Mansour;
- Yu, Shui-Qing
Publication type:
Article
Optical Characterization of Si-Based GeSn Alloys with Sn Compositions up to 12%.
Published in:
Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2133, doi. 10.1007/s11664-015-4283-6
By:
- Al-Kabi, Sattar;
- Ghetmiri, Seyed;
- Margetis, Joe;
- Du, Wei;
- Mosleh, Aboozar;
- Alher, Murtadha;
- Dou, Wei;
- Grant, Joshua;
- Sun, Greg;
- Soref, Richard;
- Tolle, John;
- Li, Baohua;
- Mortazavi, Mansour;
- Naseem, Hameed;
- Yu, Shui-Qing
Publication type:
Article
Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD Gas Mixing.
Published in:
Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2051, doi. 10.1007/s11664-016-4402-z
By:
- Mosleh, Aboozar;
- Alher, Murtadha;
- Cousar, Larry;
- Du, Wei;
- Ghetmiri, Seyed;
- Al-Kabi, Sattar;
- Dou, Wei;
- Grant, Perry;
- Sun, Greg;
- Soref, Richard;
- Li, Baohua;
- Naseem, Hameed;
- Yu, Shui-Qing
Publication type:
Article
Material Characterization of GeSn Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications.
Published in:
Journal of Electronic Materials, 2014, v. 43, n. 4, p. 938, doi. 10.1007/s11664-014-3089-2
By:
- Mosleh, Aboozar;
- Ghetmiri, Seyed;
- Conley, Benjamin;
- Hawkridge, Michael;
- Benamara, Mourad;
- Nazzal, Amjad;
- Tolle, John;
- Yu, Shui-Qing;
- Naseem, Hameed
Publication type:
Article
InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications.
Published in:
Nanoscale Research Letters, 2010, v. 5, n. 6, p. 1079, doi. 10.1007/s11671-010-9605-2
By:
- Zhenhua Li;
- Jiang Wu;
- Zhiming M. Wang;
- Dongsheng Fan;
- Aqiang Guo;
- Shibing Li;
- Shui-Qing Yu;
- Manasreh, Omar;
- Salamo, Gregory
Publication type:
Article
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam.
Published in:
Crystals (2073-4352), 2024, v. 14, n. 8, p. 724, doi. 10.3390/cryst14080724
By:
- Wangila, Emmanuel;
- Gunder, Calbi;
- Zamani-Alavijeh, Mohammad;
- Maia de Oliveira, Fernando;
- Kryvyi, Serhii;
- Sheibani, Aida;
- Mazur, Yuriy I.;
- Yu, Shui-Qing;
- Salamo, Gregory J.
Publication type:
Article
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
Published in:
Crystals (2073-4352), 2024, v. 14, n. 5, p. 414, doi. 10.3390/cryst14050414
By:
- Wangila, Emmanuel;
- Gunder, Calbi;
- Lytvyn, Petro M.;
- Zamani-Alavijeh, Mohammad;
- Maia de Oliveira, Fernando;
- Kryvyi, Serhii;
- Stanchu, Hryhorii;
- Sheibani, Aida;
- Mazur, Yuriy I.;
- Yu, Shui-Qing;
- Salamo, Gregory
Publication type:
Article
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy.
Published in:
Crystals (2073-4352), 2023, v. 13, n. 11, p. 1557, doi. 10.3390/cryst13111557
By:
- Wangila, Emmanuel;
- Lytvyn, Peter;
- Stanchu, Hryhorii;
- Gunder, Calbi;
- de Oliveira, Fernando Maia;
- Saha, Samir;
- Das, Subhashis;
- Eldose, Nirosh;
- Li, Chen;
- Zamani-Alavijeh, Mohammad;
- Benamara, Mourad;
- Mazur, Yuriy I.;
- Yu, Shui-Qing;
- Salamo, Gregory J.
Publication type:
Article
Impact of Long-Term Annealing on Photoluminescence from Ge 1−x Sn x Alloys.
Published in:
Crystals (2073-4352), 2021, v. 11, n. 8, p. 905, doi. 10.3390/cryst11080905
By:
- Olorunsola, Oluwatobi;
- Stanchu, Hryhorii;
- Ojo, Solomon;
- Pandey, Krishna;
- Said, Abdulla;
- Margetis, Joe;
- Tolle, John;
- Kuchuk, Andrian;
- Mazur, Yuriy I.;
- Salamo, Gregory;
- Yu, Shui-Qing
Publication type:
Article
Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.
Published in:
Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-50349-z
By:
- Eales, Timothy D.;
- Marko, Igor P.;
- Schulz, Stefan;
- O'Halloran, Edmond;
- Ghetmiri, Seyed;
- Du, Wei;
- Zhou, Yiyin;
- Yu, Shui-Qing;
- Margetis, Joe;
- Tolle, John;
- O'Reilly, Eoin P.;
- Sweeney, Stephen J.
Publication type:
Article
"GeSn Rule-23"—The Performance Limit of GeSn Infrared Photodiodes.
Published in:
Sensors (14248220), 2023, v. 23, n. 17, p. 7386, doi. 10.3390/s23177386
By:
- Chang, Guo-En;
- Yu, Shui-Qing;
- Sun, Greg
Publication type:
Article
Endothelial cell CD36 optimizes tissue fatty acid uptake.
Published in:
2018
By:
- Ni-Huiping Son;
- Basu, Debapriya;
- Samovski, Dmitri;
- Pietka, Terri A.;
- Peche, Vivek S.;
- Willecke, Florian;
- Xiang Fang;
- Shui-Qing Yu;
- Scerbo, Diego;
- Hye Rim Chang;
- Fei Sun;
- Bagdasarov, Svetlana;
- Drosatos, Konstantinos;
- Yeh, Steve T.;
- Mullick, Adam E.;
- Shoghi, Kooresh I.;
- Gumaste, Namrata;
- Kyeong Jin Kim;
- Huggins, Lesley-Ann;
- Lhakhang, Tenzin
Publication type:
journal article
Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy.
Published in:
Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 5, p. 1635, doi. 10.1007/s10854-012-0987-z
By:
- Fan, Dongsheng;
- Zeng, Zhaoquan;
- Dorogan, Vitaliy;
- Hirono, Yusuke;
- Li, Chen;
- Mazur, Yuriy;
- Yu, Shui-Qing;
- Johnson, Shane;
- Wang, Zhiming;
- Salamo, Gregory
Publication type:
Article
3D Nanoscale Mapping of Short‐Range Order in GeSn Alloys.
Published in:
Small Methods, 2022, v. 6, n. 5, p. 1, doi. 10.1002/smtd.202200029
By:
- Liu, Shang;
- Covian, Alejandra Cuervo;
- Wang, Xiaoxin;
- Cline, Cory T.;
- Akey, Austin;
- Dong, Weiling;
- Yu, Shui‐Qing;
- Liu, Jifeng
Publication type:
Article
Group IV topological quantum alloy and the role of short-range order: the case of Ge-rich Ge1–xPbx.
Published in:
NPJ Computational Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41524-024-01271-0
By:
- Liang, Yunfan;
- Chen, Shunda;
- Jin, Xiaochen;
- West, Damien;
- Yu, Shui-Qing;
- Li, Tianshu;
- Zhang, Shengbai
Publication type:
Article
High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900792
By:
- Madhusoodhanan, Syam;
- Sabbar, Abbas;
- Atcitty, Stanley;
- Kaplar, Robert;
- Mantooth, Alan;
- Yu, Shui-Qing;
- Chen, Zhong
Publication type:
Article
Toward Single Atom Chains with Exfoliated Tellurium.
Published in:
Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2255-x
By:
- Churchill, Hugh;
- Salamo, Gregory;
- Yu, Shui-Qing;
- Hironaka, Takayuki;
- Hu, Xian;
- Stacy, Jeb;
- Shih, Ishiang
Publication type:
Article
Modeling Study of Si 3 N 4 Waveguides on a Sapphire Platform for Photonic Integration Applications.
Published in:
Materials (1996-1944), 2024, v. 17, n. 16, p. 4148, doi. 10.3390/ma17164148
By:
- Zhang, Diandian;
- Yu, Shui-Qing;
- Salamo, Gregory J.;
- Soref, Richard A.;
- Du, Wei
Publication type:
Article
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%.
Published in:
Materials (1996-1944), 2021, v. 14, n. 24, p. 7637, doi. 10.3390/ma14247637
By:
- Grant, Joshua;
- Abernathy, Grey;
- Olorunsola, Oluwatobi;
- Ojo, Solomon;
- Amoah, Sylvester;
- Wanglia, Emmanuel;
- Saha, Samir K.;
- Sabbar, Abbas;
- Du, Wei;
- Alher, Murtadha;
- Li, Bao-Hua;
- Yu, Shui-Qing
Publication type:
Article
Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission.
Published in:
Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-45916-4
By:
- Abernathy, Grey;
- Ojo, Solomon;
- Said, Abdulla;
- Grant, Joshua M.;
- Zhou, Yiyin;
- Stanchu, Hryhorii;
- Du, Wei;
- Li, Baohua;
- Yu, Shui-Qing
Publication type:
Article
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.
Published in:
Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 909, doi. 10.3390/nano14110909
By:
- Gunder, Calbi;
- Zamani-Alavijeh, Mohammad;
- Wangila, Emmanuel;
- Maia de Oliveira, Fernando;
- Sheibani, Aida;
- Kryvyi, Serhii;
- Attwood, Paul C.;
- Mazur, Yuriy I.;
- Yu, Shui-Qing;
- Salamo, Gregory J.
Publication type:
Article

Found: 28

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System.

Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications.

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules.

Design and optimization of high temperature optocouplers as galvanic isolation.

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement.

GePb Alloy Growth Using Layer Inversion Method.

Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications.

Structural and Optical Characteristics of GeSn Quantum Wells for Silicon-Based Mid-Infrared Optoelectronic Applications.

Optical Characterization of Si-Based GeSn Alloys with Sn Compositions up to 12%.

Buffer-Free GeSn and SiGeSn Growth on Si Substrate Using In Situ SnD Gas Mixing.

Material Characterization of GeSn Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications.

InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications.

High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam.

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.

Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy.

Impact of Long-Term Annealing on Photoluminescence from Ge 1−x Sn x Alloys.

Ge<sub>1−x</sub>Sn<sub>x</sub> alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration.

"GeSn Rule-23"—The Performance Limit of GeSn Infrared Photodiodes.

Endothelial cell CD36 optimizes tissue fatty acid uptake.

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy.

3D Nanoscale Mapping of Short‐Range Order in GeSn Alloys.

Group IV topological quantum alloy and the role of short-range order: the case of Ge-rich Ge<sub>1–x</sub>Pb<sub>x</sub>.

High‐Temperature Optical Characterization of GaN‐Based Light‐Emitting Diodes for Future Power Electronic Modules.

Toward Single Atom Chains with Exfoliated Tellurium.

Modeling Study of Si 3 N 4 Waveguides on a Sapphire Platform for Photonic Integration Applications.

Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%.

Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission.

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.