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On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2024, v. 18, n. 2, p. 408, doi. 10.1134/S1027451024020289
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Parameter-Free Model of the Self-Catalyzed Growth of Ga(As,P) Nanowires.
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- Semiconductors, 2022, v. 56, n. 1, p. 14, doi. 10.1134/S1063782622010134
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Growth Kinetics of Planar Nanowires.
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- Technical Physics Letters, 2020, v. 46, n. 10, p. 1008, doi. 10.1134/S1063785020100223
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Luminescence Photodynamics of Hybrid-Structured InP/InAsP/InP Nanowires Passivated by a Layer of TOPO-CdSe/ZnS Quantum Dots.
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- Semiconductors, 2020, v. 54, n. 9, p. 1141, doi. 10.1134/S1063782620090158
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Free Energy of Nucleus Formation during Growth of III–V Semiconductor Nanowires.
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- Technical Physics Letters, 2020, v. 46, n. 9, p. 889, doi. 10.1134/S1063785020090187
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MBE-Grown InxGa1 –xAs Nanowires with 50% Composition.
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- Semiconductors, 2020, v. 54, n. 6, p. 650, doi. 10.1134/S1063782620060056
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- Article
Wurtzite AlGaAs Nanowires.
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- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-57563-0
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Nonlinear Bleaching of InAs Nanowires in the Visible Range.
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- Optics & Spectroscopy, 2020, v. 128, n. 1, p. 125, doi. 10.1134/S0030400X20010130
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The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires.
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- Technical Physics Letters, 2019, v. 45, n. 8, p. 835, doi. 10.1134/S1063785019080212
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Growth of GaN Nanotubes and Nanowires on Au–Ni Catalysts.
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- Technical Physics Letters, 2019, v. 45, n. 2, p. 159, doi. 10.1134/S1063785019020329
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Structural and Optical Properties of Wurtzite AlGaAs Nanowires Grown by MBE on Si(111) Substrate.
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- Semiconductors, 2018, v. 52, n. 16, p. 2146, doi. 10.1134/S1063782618160285
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Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 12, p. 1529, doi. 10.1134/S1063782618120175
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Solar Cell Based on Core/Shell Nanowires.
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- Semiconductors, 2018, v. 52, n. 12, p. 1568, doi. 10.1134/S1063782618120229
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Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.
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- Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299
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Hybrid GaAs/AlGaAs Nanowire—Quantum dot System for Single Photon Sources.
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- Semiconductors, 2018, v. 52, n. 4, p. 462, doi. 10.1134/S1063782618040103
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Luminescence of ZnMnTe/ZnMgTe Heterostructures with Monolayer Manganese Inclusions in ZnTe Quantum Wells and Its Behavior in a Magnetic Field.
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- Semiconductors, 2018, v. 52, n. 4, p. 514, doi. 10.1134/S1063782618040267
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Coherent Growth of InP/InAsP/InP Nanowires on a Si (111) Surface by Molecular-Beam Epitaxy.
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- Technical Physics Letters, 2018, v. 44, n. 2, p. 112, doi. 10.1134/S1063785018020116
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GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases.
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- Semiconductors, 2018, v. 52, n. 1, p. 1, doi. 10.1134/S1063782618010219
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MBE growth of ultrathin III-V nanowires on a highly mismatched SiC/Si(111) substrate.
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- Semiconductors, 2017, v. 51, n. 11, p. 1472, doi. 10.1134/S1063782617110252
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Directional emission from beryllium doped GaAs/AlGaAs nanowires.
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- Technical Physics Letters, 2017, v. 43, n. 9, p. 811, doi. 10.1134/S1063785017090085
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Surface passivation of GaAs nanowires by the atomic layer deposition of AlN.
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- Semiconductors, 2016, v. 50, n. 12, p. 1619, doi. 10.1134/S1063782616120186
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Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon.
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- Semiconductors, 2016, v. 50, n. 11, p. 1421, doi. 10.1134/S1063782616110257
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Temperature quenching of intracenter luminescence of Mn ions in diluted magnetic semiconductors.
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- Optics & Spectroscopy, 2016, v. 121, n. 4, p. 507, doi. 10.1134/S0030400X16100027
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The effect of a gas environment on the fluorescence intensity of quantum-dot composite systems.
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- Optics & Spectroscopy, 2016, v. 121, n. 3, p. 374, doi. 10.1134/S0030400X16090071
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The Effect of External Gaseous Environments on the Photoluminescence Intensity of Quantum-Dimensional Composite System.
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- Journal of Nanomaterials, 2015, p. 1, doi. 10.1155/2015/713837
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Photoelectric properties of an array of axial GaAs/AlGaAs nanowires.
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- Technical Physics Letters, 2015, v. 41, n. 5, p. 443, doi. 10.1134/S1063785015050077
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Raman spectra and structural peculiarities of GaAs nanowires.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2014, v. 8, n. 1, p. 104, doi. 10.1134/S1027451014010297
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Composite system based on CdSe/ZnS quantum dots and GaAs nanowires.
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- Semiconductors, 2013, v. 47, n. 10, p. 1346, doi. 10.1134/S106378261310014X
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Photovoltaic properties of GaAs:Be nanowire arrays.
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- Semiconductors, 2013, v. 47, n. 6, p. 808, doi. 10.1134/S1063782613060079
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Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure.
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- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 175, doi. 10.1002/pssr.201004185
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Baric properties of InAs quantum dots.
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- Semiconductors, 2008, v. 42, n. 9, p. 1076, doi. 10.1134/S1063782608090133
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INFLUENCE OF HYDROSTATIC PRESSURE ON EXCITON PHOTOLUMINESCENCE SPECTRUM OF EXCITON MOLECULES InAs/GaAs.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 249, doi. 10.1142/S0219581X07004651
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