Found: 21
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GaSb-based heterostructure with buried vacuum pocket photonic crystal layer.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 8, p. 388, doi. 10.1049/el.2019.3710
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- Article
GaSb‐based heterostructure with buried vacuum pocket photonic crystal layer.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 9, p. 388, doi. 10.1049/el.2019.3710
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- Publication type:
- Article
Narrow ridge GaSb-based cascade diode lasers fabricated by methane-hydrogen reactive ion etching.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 1, p. 40, doi. 10.1049/el.2016.3394
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- Article
Narrow ridge GaSb‐based cascade diode lasers fabricated by methane–hydrogen reactive ion etching.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 1, p. 40, doi. 10.1049/el.2016.3394
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- Publication type:
- Article
Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 μm.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 10, p. 857, doi. 10.1049/el.2016.0115
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- Article
Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 11, p. 857, doi. 10.1049/el.2016.0115
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- Article
Lattice parameter engineering for III--V long wave infrared photonics.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 19, p. 1521, doi. 10.1049/el.2015.2572
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- Article
Lattice parameter engineering for III–V long wave infrared photonics.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 18, p. 1521, doi. 10.1049/el.2015.2572
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- Publication type:
- Article
Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 19, p. 1378, doi. 10.1049/el.2014.2733
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- Article
Distributed feedback 3.27 µm diode lasers with continuous‐wave output power above 15 mW at room temperature.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 19, p. 1378, doi. 10.1049/el.2014.2733
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- Publication type:
- Article
Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells.
- Published in:
- Semiconductors, 2013, v. 47, n. 11, p. 1513, doi. 10.1134/S1063782613110237
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- Article
Room temperature operated diffraction limited λ ≃ 3 μm diode lasers with 37 mW of continuous-wave output power.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 10, p. 1, doi. 10.1049/el.2013.0804
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- Article
Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous‐wave output power.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 10, p. 667, doi. 10.1049/el.2013.0804
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- Publication type:
- Article
Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures.
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- Semiconductors, 2013, v. 47, n. 1, p. 146, doi. 10.1134/S1063782612120202
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- Article
ALLOYS WITH NATIVE LATTICE PARAMETERS GROWN ON COMPOSITIONALLY GRADED BUFFERS: STRUCTURAL AND OPTICAL PROPERTIES.
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- International Journal of High Speed Electronics & Systems, 2012, v. 21, n. 1, p. -1, doi. 10.1142/S0129156412500139
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- Article
Carrier heating in quantum wells under optical and current injection of electron-hole pairs.
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- Semiconductors, 2010, v. 44, n. 11, p. 1402, doi. 10.1134/S1063782610110047
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- Article
Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures.
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- Semiconductors, 2010, v. 44, n. 1, p. 50, doi. 10.1134/S1063782610010082
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- Publication type:
- Article
2.3- μm High-Power Type I Quantum-Well GaInAsSb/AlGaAsSb/GaSb Laser Diode Arrays with Increased Fill Factor.
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- Journal of Electronic Materials, 2008, v. 37, n. 12, p. 1770, doi. 10.1007/s11664-008-0495-3
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- Article
HIGH POWER TYPE-I GASB-BASED LASERS.
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- International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 597, doi. 10.1142/S0129156406003886
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- Article
Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level
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- Semiconductors, 1998, v. 32, n. 7, p. 720, doi. 10.1134/1.1187492
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- Article
Excited states of chalcogen ions in germanium.
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- Semiconductors, 1998, v. 32, n. 2, p. 140, doi. 10.1134/1.1187334
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- Article