Works matching AU Shmidt, M.

Results: 43

DIFFUSION LENGTH AND EFFECTIVE CARRIER LIFETIME IN III-NITRIDES.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 323, doi. 10.1142/S0219581X07004870

By:

SHMIDT, N. M.;
TITKOV, A. N.;
YAKIMOV, E. B.

Publication type:

Article

Surface Gettering of Background Impurities and Defects in GaAs Wafers.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 177, doi. 10.1134/1.1349927

By:

Vlasenko, L. S.;
Gorelenok, A. T.;
Emtsev, V. V.;
Kamanin, A. V.;
Poloskin, D. S.;
Shmidt, N. M.

Publication type:

Article

Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped Al[sub x]Ga[sub 1 – ][sub x]N Epilayers on Sapphire.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1248, doi. 10.1134/1.1325417

By:

Usikov, A. S.;
Tret’yakov, V. V.;
Bobyl’, A. V.;
Kyutt, R. N.;
Lundin, W. V.;
Pushnyı, B. V.;
Shmidt, N. M.

Publication type:

Article

Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review.

Published in:

Semiconductors, 1999, v. 33, n. 3, p. 265, doi. 10.1134/1.1187676

By:

Guk, E. G.;
Kamanin, A. V.;
Shmidt, N. M.;
Shuman, V. B.;
Yurre, T. A.

Publication type:

Article

Temperature-Dependent Decrease in Efficiency in Power Blue InGaN/GaN LEDs.

Published in:

Technical Physics Letters, 2020, v. 46, n. 12, p. 1253, doi. 10.1134/S1063785020120275

By:

Shmidt, N. M.;
Shabunina, E. I.;
Chernyakov, A. E.;
Ivanov, A. E.;
Tal'nishnikh, N. A.;
Zakgeim, A. L.

Publication type:

Article

The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers.

Published in:

Technical Physics Letters, 2018, v. 44, n. 7, p. 574, doi. 10.1134/S1063785018070131

By:

Sobolev, N. A.;
Ber, B. Ya.;
Kazantsev, D. Yu.;
Kalyadin, A. E.;
Karabeshkin, K. V.;
Mikoushkin, V. M.;
Sakharov, V. I.;
Serenkov, I. T.;
Shek, E. I.;
Sherstnev, E. V.;
Shmidt, N. M.

Publication type:

Article

The Role of Bacterial Growth Autoregulators (Alkyl Hydroxybenzenes) in the Response of Staphylococci to Stresses.

Published in:

Microbiology (00262617), 2002, v. 71, n. 1, p. 18, doi. 10.1023/A:1017938014022

By:

Il'inskaya, O. N.;
Kolpakov, A. I.;
Shmidt, M. A.;
Doroshenko, E. V.;
Mulyukin, A. L.;
El'-Registan, G. I.

Publication type:

Article

Electron irradiation of near-UV GaN/InGaN light emitting diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700372

By:

Lee, In‐Hwan;
Polyakov, Alexander Y.;
Smirnov, N. B.;
Shchemerov, I. V.;
Shmidt, N. M.;
Tal'nishnih, N. A.;
Shabunina, E. I.;
Cho, Han‐Su;
Hwang, Sung‐Min;
Zinovyev, R. A.;
Didenko, S. I.;
Lagov, P. B.;
Pearton, S. J.

Publication type:

Article

MODERNIZATION OF GOLD-BEARING ORE EXTRACTION TECHNOLOGY DEPENDING ON GEOLOGICAL AND MINING CONDITIONS.

Published in:

Vestnik KazUTB, 2025, v. 1, n. 26, p. 432, doi. 10.58805/kazutb.v.1.26-854

By:

Dauletzhanova, Zh. T.;
Zakharov, A. M.;
Shmidt-Fedotova, I. M.

Publication type:

Article

Impact Ionization of Excitons in an Electric Field in GaN.

Published in:

Physica Status Solidi (B), 1999, v. 216, n. 1, p. 63, doi. 10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8

By:

Nelson, D.K.;
Jacobson, M.A.;
Kagan, V.D.;
Shmidt, M.;
Gil, B.;
Grandjean, N.;
Massies, J.

Publication type:

Article

Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 545, doi. 10.1134/S1063782619040080

By:

Dobrov, V. A.;
Kozlovski, V. V.;
Mescheryakov, A. V.;
Usychenko, V. G.;
Chernova, A. S.;
Shabunina, E. I.;
Shmidt, N. M.

Publication type:

Article

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System.

Published in:

Semiconductors, 2018, v. 52, n. 7, p. 942, doi. 10.1134/S1063782618070072

By:

Emtsev, V. V.;
Gushchina, E. V.;
Petrov, V. N.;
Tal’nishnih, N. A.;
Chernyakov, A. E.;
Shabunina, E. I.;
Shmidt, N. M.;
Usikov, A. S.;
Kartashova, A. P.;
Zybin, A. A.;
Kozlovski, V. V.;
Kudoyarov, M. F.;
Saharov, A. V.;
Oganesyan, A. G.;
Poloskin, D. S.;
Lundin, V. V.

Publication type:

Article

Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding.

Published in:

Semiconductors, 2010, v. 44, n. 8, p. 1101, doi. 10.1134/S1063782610080269

By:

Grekhov, I. V.;
Kostina, L. S.;
Argunova, T. S.;
Belyakova, E. I.;
Rozkov, A. V.;
Shmidt, N. M.;
Yusupova, Sh. A.;
Je, J. H.

Publication type:

Article

Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 674, doi. 10.1134/1.1944858

By:

Blank, T. V.;
Goldberg, Yu. A.;
Zavarin, E. E.;
Konstantinov, O. V.;
Shmidt, N. M.

Publication type:

Article

MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.

Published in:

Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068

By:

Lundin, V. V.;
Zavarin, E. E.;
Besulkin, A. I.;
Gladyshev, A. G.;
Sakharov, A. V.;
Kokorev, M. F.;
Shmidt, N. M.;
Tsatsul'nikov, A. F.;
Ledentsov, N. N.;
Alferov, Zh. I.;
Kakanakov, R.

Publication type:

Article

Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure.

Published in:

Semiconductors, 2004, v. 38, n. 9, p. 998, doi. 10.1134/1.1797474

By:

Shmidt, N. M.;
Levinshtein, M. E.;
Lundin, W. V.;
Besyul'kin, A. I.;
Kop'ev, P. S.;
Rumyantsev, S. L.;
Pala, N.;
Shur, M. S.

Publication type:

Article

Deep Levels in the Band Gap of GaN Layers Irradiated with Protons.

Published in:

Semiconductors, 2002, v. 36, n. 12, p. 1352, doi. 10.1134/1.1529245

By:

Sobolev, M. M.;
Sobolev, N. A.;
Usikov, A. S.;
Shmidt, N. M.;
Yakimenko, A. N.;
Gusinskiı, G. M.;
Naıdenov, V. O.

Publication type:

Article

Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 641, doi. 10.1134/1.1485662

By:

Andrianov, A. V.;
Nekrasov, V. Yu.;
Shmidt, N. M.;
Zavarin, E. E.;
Usikov, A. S.;
Zinov’ev, N. N.;
Tkachuk, M. N.

Publication type:

Article

Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes of Minority Charge Carriers in Gettered GaAs Wafers.

Published in:

Semiconductors, 2002, v. 36, n. 4, p. 382, doi. 10.1134/1.1469183

By:

Andrievskiı, V. F.;
Gorelenok, A. T.;
Zagorel’skaya, N. A.;
Kamanin, A. V.;
Shmidt, N. M.

Publication type:

Article

Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds.

Published in:

Journal of Applied Spectroscopy, 2023, v. 90, n. 1, p. 24, doi. 10.1007/s10812-023-01497-8

By:

Shabunina, E. I.;
Chernyakov, A. E.;
Ivanov, A. E.;
Kartashova, A. P.;
Kuchinsky, V. I.;
Poloskin, D. S.;
Talnishnikh, N. A.;
Shmidt, N. M.;
Zakgeim, A. L.

Publication type:

Article

Charge accumulation layers and surface states in ultrathin Cs,Ba/ n-GaN(0001) interfaces.

Published in:

Journal of Experimental & Theoretical Physics, 2006, v. 103, n. 3, p. 441, doi. 10.1134/S1063776106090147

By:

Benemanskaya, G. V.;
Frank-Kamentskaya, G. E.;
Shmidt, N. M.;
Dunaevskiĭ, M. S.

Publication type:

Article

Oscillations in the Threshold Photoemission Spectra of GaN(0001) with Submonolayer Cs Coverages.

Published in:

JETP Letters, 2003, v. 77, n. 5, p. 226

By:

Afanas’ev, I. V.;
Benemanskaya, G. V.;
Vikhnin, V. S.;
Frank-Kamenetskaya, G. É.;
Shmidt, N. M.

Publication type:

Article

Participation of Defects Localized at Heterointerfaces and Extended Defects in the Degradation of Nitride-Based Light-Emitting Devices.

Published in:

Optics & Spectroscopy, 2024, v. 132, n. 2, p. 193, doi. 10.1134/S0030400X24020176

By:

Talnishnikh, N. A.;
Ivanov, A. E.;
Shabunina, E. I.;
Shmidt, N. M.

Publication type:

Article

Investigation of the Morphology and Electrical Properties of Graphene Used in the Development of Biosensors for Detection of Influenza Viruses.

Published in:

Biosensors (2079-6374), 2022, v. 12, n. 1, p. 8, doi. 10.3390/bios12010008

By:

Shmidt, Natalia M.;
Usikov, Alexander S.;
Shabunina, Evgeniia I.;
Nashchekin, Alexey V.;
Gushchina, Ekaterina V.;
Eliseev, Ilya A.;
Petrov, Vasily N.;
Puzyk, Mikhail V.;
Avdeev, Oleg V.;
Klotchenko, Sergey A.;
Lebedev, Sergey P.;
Tanklevskaya, Elena M.;
Makarov, Yuri N.;
Lebedev, Alexander A.;
Vasin, Andrey V.

Publication type:

Article

Expression of Beclin-1 and LAMP-2 in Rat Hippocampus under Conditions of Simulated Gravity Overload in the Caudocranial Vector.

Published in:

Bulletin of Experimental Biology & Medicine, 2018, v. 165, n. 1, p. 105, doi. 10.1007/s10517-018-4109-7

By:

Smirnov, A.V.;
Mednikov, D. S.;
Shmidt, M. V.;
Kurkin, D. V.;
Bakulin, D. A.;
Volotova, E. V.;
Tyurenkov, I. N.

Publication type:

Article

Effect of Combined Stress on Morphological Changes and Expression of NO Synthases in Rat Ventral Hippocampus.

Published in:

Bulletin of Experimental Biology & Medicine, 2015, v. 160, n. 1, p. 96, doi. 10.1007/s10517-015-3107-2

By:

Smirnov, A.;
Tyurenkov, I.;
Shmidt, M.;
Ekova, M.;
Mednikov, D.;
Borodin, D.

Publication type:

Article

Patterns of TRPM7 Expression in Hypothalamic and Hippocampal Neurons in Modeling of Nutritional Magnesium Defi ciency.

Published in:

Bulletin of Experimental Biology & Medicine, 2014, v. 156, n. 6, p. 736, doi. 10.1007/s10517-014-2436-x

By:

Smirnov, A.;
Spasov, A.;
Shmidt, M.;
Snigur, G.;
Evsyukov, O.;
Zheltova, A.

Publication type:

Article

Functional and Morphological Changes in the Pyramidal Layer of the Hippocampus in Rats with Encephalopathy Induced by Prolonged Exposure to Gravitational Overloading.

Published in:

Neuroscience & Behavioral Physiology, 2020, v. 50, n. 4, p. 479, doi. 10.1007/s11055-020-00923-0

By:

Tyurenkov, I. N.;
Smirnov, A. V.;
Mednikov, D. S.;
Shmidt, M. V.;
Ekova, M. R.;
Kurkin, D. V.;
Bakulin, D. A.;
Volotova, E. V.

Publication type:

Article

Morphological Changes and Characteristics of the Expression of Serine Racemase in the Rat Hippocampus after Repeated Exposure to Negative Gravitational Overload.

Published in:

Neuroscience & Behavioral Physiology, 2019, v. 49, n. 3, p. 373, doi. 10.1007/s11055-019-00743-x

By:

Mednikov, D. S.;
Smirnov, A. V.;
Shmidt, M. V.;
Tyurenkov, I. N.;
Kurkin, D. V.;
Bakulin, D. A.;
Volotova, Ye. V.

Publication type:

Article

Morphological Changes and Characteristics of the Expression of Serine Racemase in the Hippocampus of Rats Exposed to Multiple Negative Gravitational Overloads.

Published in:

Neuroscience & Behavioral Physiology, 2019, v. 49, n. 1, p. 89, doi. 10.1007/s11055-018-0698-x

By:

Mednikov, D. S.;
Smirnov, A. V.;
Shmidt, M. V.;
Tyurenkov, I. N.;
Kurkin, D. V.;
Bakulin, D. A.;
Volotova, E. V.

Publication type:

Article

Morphological Changes and Characteristics of the Expression of Serine Racemase in the Rat Hippocampus in Combined Stress.

Published in:

Neuroscience & Behavioral Physiology, 2017, v. 47, n. 8, p. 1010, doi. 10.1007/s11055-017-0504-1

By:

Smirnov, A.;
Grigor'eva, N.;
Ekova, M.;
Shmidt, M.;
Mednikov, D.;
Tyurenkov, I.;
Kurkin, D.;
Volotova, E.

Publication type:

Article

Direct Bonding of Silicon Wafers with the Concurrent Formation of Diffusion Layers.

Published in:

Technical Physics, 2001, v. 46, n. 6, p. 690, doi. 10.1134/1.1379636

By:

Grekhov, I. V.;
Kostina, L. S.;
Argunova, T. S.;
Belyakova, E. I.;
Shmidt, N. M.;
Kostin, K. B.;
Kim, E. D.;
Kim, S. Ch.

Publication type:

Article

COAL BED METHANE OF KARAGANDA BASIN IN THE GAS BALANCE OF THE REPUBLIC OF KAZAKHSTAN: STATUS AND PROSPECTS.

Published in:

Scientific Bulletin of National Mining University, 2017, n. 1, p. 12

By:

Drizhd, N. A.;
Kamarov, R. K.;
Akhmatnurov, D. R.;
Zamaliyev, N. M.;
Shmidt-Fedotova, I. M.

Publication type:

Article

Quality Assessment of Processed Graphene Chips for Biosensor Application.

Published in:

Materials (1996-1944), 2023, v. 16, n. 16, p. 5628, doi. 10.3390/ma16165628

By:

Shmidt, Natalia M.;
Shabunina, Evgeniya I.;
Gushchina, Ekaterina V.;
Petrov, Vasiliy N.;
Eliseyev, Ilya A.;
Lebedev, Sergey P.;
Priobrazhenskii, Sergei Iu.;
Tanklevskaya, Elena M.;
Puzyk, Mikhail V.;
Roenkov, Alexander D.;
Usikov, Alexander S.;
Lebedev, Alexander A.

Publication type:

Article

Application of a Virtual-Boundary Method for the Numerical Study of Oscillations Developing Behind a Cylinder Near A Plane Wall.

Published in:

Fluid Dynamics, 2004, v. 39, n. 1, p. 61, doi. 10.1023/B:FLUI.0000024812.36878.1f

By:

Kit, E.;
Nikitin, N. V.;
Shmidt, V. M.;
Yakhot, A.

Publication type:

Article

Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current.

Published in:

Technical Physics Letters, 2009, v. 35, n. 10, p. 922, doi. 10.1134/S1063785009100149

By:

Averkiev, N. S.;
Levinshtein, M. E.;
Petrov, P. V.;
Chernyakov, A. E.;
Shabunina, E. I.;
Shmidt, N. M.

Publication type:

Article

Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system.

Published in:

Technical Physics Letters, 2007, v. 33, n. 7, p. 590, doi. 10.1134/S1063785007070152

By:

Vasil'ev, A. P.;
Gladyshev, A. G.;
Zhukov, A. E.;
Kryzhanovskaya, N. V.;
Mikhrin, V. S.;
Musikhin, Yu. G.;
Petrov, V. S.;
Ratnikov, V. V.;
Shmidt, N. M.

Publication type:

Article

Localized states in the active region of blue LEDs related to a system of extended defects.

Published in:

Technical Physics Letters, 2007, v. 33, n. 2, p. 143, doi. 10.1134/S1063785007020150

By:

Davydov, D. V.;
Zakgeim, A. L.;
Snegov, F. M.;
Sobolev, M. M.;
Chernyakov, A. E.;
Usikov, A. S.;
Shmidt, N. M.

Publication type:

Article

P--i--n Structures Based on High-Ohmic Gettered Gallium Arsenide for α Particle Detectors.

Published in:

Technical Physics Letters, 2006, v. 32, n. 11, p. 987, doi. 10.1134/S1063785006110241

By:

Gorelenok, A. T.;
Tomasov, A. A.;
Shmidt, N. M.;
Il’ichev, É. A.;
Lantratov, V. M.;
Zadiranov, Yu. M.;
Brunkov, P. N.;
Titkova, O. V.;
Kalyuzhnyĭ, N. A.;
Mintarov, S. A.;
Mdivani, V. N.;
Katsoev, V. V.;
Katsoev, L. V.;
Shmelev, S. S.

Publication type:

Article

Application of the Multifractal Concept to Characterization of the Structure of Composite Films of Fullerene C[sub 60] Doped with CdTe.

Published in:

Technical Physics Letters, 2003, v. 29, n. 7, p. 575, doi. 10.1134/1.1598554

By:

Nashchekin, A. V.;
Kolmakov, A. G.;
Soshnikov, I. P.;
Shmidt, N. M.;
Loskutov, A. V.

Publication type:

Article

Depth Profiles of the Majority Carrier Concentration and the Minority Carrier Effective Lifetime in Gettered GaAs.

Published in:

Technical Physics Letters, 2001, v. 27, n. 12, p. 1013, doi. 10.1134/1.1432332

By:

Andrievskii, V. F.;
Gorelenok, A. T.;
Zagorel’skaya, N. A.;
Kamanin, A. V.;
Shmidt, N. M.

Publication type:

Article

Diagnostics of High-Resistivity GaAs Wafers by Microwave Photoconductivity.

Published in:

Technical Physics Letters, 2001, v. 27, n. 1, p. 9, doi. 10.1134/1.1345152

By:

Vlasenko, L. S.;
Gorelenok, A. T.;
Emtsev, V. V.;
Kamanin, A. V.;
Kokhanovskiı, S. I.;
Poloskin, D. S.;
Shmidt, N. M.

Publication type:

Article

Influence of Nanostructuration Process On the Properties of Materials.

Published in:

Nonlinear Optics, Quantum Optics: Concepts in Modern Optics, 2012, v. 45, n. 1/2, p. 153

By:

KAMANINA, N. V.;
ROZHKOVA, N. N.;
CHERNOZATONSKII, L. A.;
SHMIDT, N. M.;
FERRITTO, R.;
KAJZAR, F.

Publication type:

Article