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Quality Assessment of Processed Graphene Chips for Biosensor Application.
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- Materials (1996-1944), 2023, v. 16, n. 16, p. 5628, doi. 10.3390/ma16165628
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- Article
Contribution of Zone Fluctuation Potential and Disordering of Heteroboundaries to the Decreased Efficiency of Nitride-Based Leds.
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- Journal of Applied Spectroscopy, 2023, v. 90, n. 1, p. 24, doi. 10.1007/s10812-023-01497-8
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- Article
Investigation of the Morphology and Electrical Properties of Graphene Used in the Development of Biosensors for Detection of Influenza Viruses.
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- Biosensors (2079-6374), 2022, v. 12, n. 1, p. 8, doi. 10.3390/bios12010008
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- Article
Temperature-Dependent Decrease in Efficiency in Power Blue InGaN/GaN LEDs.
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- Technical Physics Letters, 2020, v. 46, n. 12, p. 1253, doi. 10.1134/S1063785020120275
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- Article
Functional and Morphological Changes in the Pyramidal Layer of the Hippocampus in Rats with Encephalopathy Induced by Prolonged Exposure to Gravitational Overloading.
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- Neuroscience & Behavioral Physiology, 2020, v. 50, n. 4, p. 479, doi. 10.1007/s11055-020-00923-0
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- Article
Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes.
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- Semiconductors, 2019, v. 53, n. 4, p. 545, doi. 10.1134/S1063782619040080
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- Article
Morphological Changes and Characteristics of the Expression of Serine Racemase in the Rat Hippocampus after Repeated Exposure to Negative Gravitational Overload.
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- Neuroscience & Behavioral Physiology, 2019, v. 49, n. 3, p. 373, doi. 10.1007/s11055-019-00743-x
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- Article
Morphological Changes and Characteristics of the Expression of Serine Racemase in the Hippocampus of Rats Exposed to Multiple Negative Gravitational Overloads.
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- Neuroscience & Behavioral Physiology, 2019, v. 49, n. 1, p. 89, doi. 10.1007/s11055-018-0698-x
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- Article
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System.
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- Semiconductors, 2018, v. 52, n. 7, p. 942, doi. 10.1134/S1063782618070072
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- Article
The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers.
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- Technical Physics Letters, 2018, v. 44, n. 7, p. 574, doi. 10.1134/S1063785018070131
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- Article
Expression of Beclin-1 and LAMP-2 in Rat Hippocampus under Conditions of Simulated Gravity Overload in the Caudocranial Vector.
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- Bulletin of Experimental Biology & Medicine, 2018, v. 165, n. 1, p. 105, doi. 10.1007/s10517-018-4109-7
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- Article
Morphological Changes and Characteristics of the Expression of Serine Racemase in the Rat Hippocampus in Combined Stress.
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- Neuroscience & Behavioral Physiology, 2017, v. 47, n. 8, p. 1010, doi. 10.1007/s11055-017-0504-1
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- Article
Electron irradiation of near-UV GaN/InGaN light emitting diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700372
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- Article
COAL BED METHANE OF KARAGANDA BASIN IN THE GAS BALANCE OF THE REPUBLIC OF KAZAKHSTAN: STATUS AND PROSPECTS.
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- Scientific Bulletin of National Mining University, 2017, n. 1, p. 12
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- Article
Effect of Combined Stress on Morphological Changes and Expression of NO Synthases in Rat Ventral Hippocampus.
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- Bulletin of Experimental Biology & Medicine, 2015, v. 160, n. 1, p. 96, doi. 10.1007/s10517-015-3107-2
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- Article
Patterns of TRPM7 Expression in Hypothalamic and Hippocampal Neurons in Modeling of Nutritional Magnesium Defi ciency.
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- Bulletin of Experimental Biology & Medicine, 2014, v. 156, n. 6, p. 736, doi. 10.1007/s10517-014-2436-x
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- Article
Influence of Nanostructuration Process On the Properties of Materials.
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- Nonlinear Optics, Quantum Optics: Concepts in Modern Optics, 2012, v. 45, n. 1/2, p. 153
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Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding.
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- Semiconductors, 2010, v. 44, n. 8, p. 1101, doi. 10.1134/S1063782610080269
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- Article
Features of the recombination processes in InGaN/GaN based LEDs at high densities of injection current.
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- Technical Physics Letters, 2009, v. 35, n. 10, p. 922, doi. 10.1134/S1063785009100149
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- Article
DIFFUSION LENGTH AND EFFECTIVE CARRIER LIFETIME IN III-NITRIDES.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 323, doi. 10.1142/S0219581X07004870
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- Article
Metamorphic InAs quantum dots: Photoluminescence features related to cooperative phenomena in the quantum dot-matrix system.
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- Technical Physics Letters, 2007, v. 33, n. 7, p. 590, doi. 10.1134/S1063785007070152
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Localized states in the active region of blue LEDs related to a system of extended defects.
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- Technical Physics Letters, 2007, v. 33, n. 2, p. 143, doi. 10.1134/S1063785007020150
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- Article
P--i--n Structures Based on High-Ohmic Gettered Gallium Arsenide for α Particle Detectors.
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- Technical Physics Letters, 2006, v. 32, n. 11, p. 987, doi. 10.1134/S1063785006110241
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- Article
Charge accumulation layers and surface states in ultrathin Cs,Ba/ n-GaN(0001) interfaces.
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- Journal of Experimental & Theoretical Physics, 2006, v. 103, n. 3, p. 441, doi. 10.1134/S1063776106090147
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- Article
Thermal–Field Forward Current in GaN-Based Surface-Barrier Structures.
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- Semiconductors, 2005, v. 39, n. 6, p. 674, doi. 10.1134/1.1944858
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- Article
MOCVD-Grown AlGaN/GaN Heterostructures with High Electron Mobility.
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- Semiconductors, 2004, v. 38, n. 11, p. 1323, doi. 10.1134/1.1823068
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- Article
Low-Frequency Noise in Gallium Nitride Epitaxial Layers with Different Degrees of Order of Mosaic Structure.
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- Semiconductors, 2004, v. 38, n. 9, p. 998, doi. 10.1134/1.1797474
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Application of a Virtual-Boundary Method for the Numerical Study of Oscillations Developing Behind a Cylinder Near A Plane Wall.
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- Fluid Dynamics, 2004, v. 39, n. 1, p. 61, doi. 10.1023/B:FLUI.0000024812.36878.1f
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- Article
Application of the Multifractal Concept to Characterization of the Structure of Composite Films of Fullerene C[sub 60] Doped with CdTe.
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- Technical Physics Letters, 2003, v. 29, n. 7, p. 575, doi. 10.1134/1.1598554
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- Article
Oscillations in the Threshold Photoemission Spectra of GaN(0001) with Submonolayer Cs Coverages.
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- JETP Letters, 2003, v. 77, n. 5, p. 226
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- Article
Deep Levels in the Band Gap of GaN Layers Irradiated with Protons.
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- Semiconductors, 2002, v. 36, n. 12, p. 1352, doi. 10.1134/1.1529245
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- Article
Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells.
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- Semiconductors, 2002, v. 36, n. 6, p. 641, doi. 10.1134/1.1485662
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- Article
Photoelectric C–V Profiling of Majority Charge Carriers and Effective Lifetimes of Minority Charge Carriers in Gettered GaAs Wafers.
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- Semiconductors, 2002, v. 36, n. 4, p. 382, doi. 10.1134/1.1469183
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The Role of Bacterial Growth Autoregulators (Alkyl Hydroxybenzenes) in the Response of Staphylococci to Stresses.
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- Microbiology (00262617), 2002, v. 71, n. 1, p. 18, doi. 10.1023/A:1017938014022
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- Article
Depth Profiles of the Majority Carrier Concentration and the Minority Carrier Effective Lifetime in Gettered GaAs.
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- Technical Physics Letters, 2001, v. 27, n. 12, p. 1013, doi. 10.1134/1.1432332
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- Article
Direct Bonding of Silicon Wafers with the Concurrent Formation of Diffusion Layers.
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- Technical Physics, 2001, v. 46, n. 6, p. 690, doi. 10.1134/1.1379636
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- Article
Surface Gettering of Background Impurities and Defects in GaAs Wafers.
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- Semiconductors, 2001, v. 35, n. 2, p. 177, doi. 10.1134/1.1349927
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- Article
Diagnostics of High-Resistivity GaAs Wafers by Microwave Photoconductivity.
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- Technical Physics Letters, 2001, v. 27, n. 1, p. 9, doi. 10.1134/1.1345152
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- Article
Internal Microstrain and Distribution of Composition and Cathodoluminescence over Lapped Al[sub x]Ga[sub 1 – ][sub x]N Epilayers on Sapphire.
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- Semiconductors, 2000, v. 34, n. 11, p. 1248, doi. 10.1134/1.1325417
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- Article
Impact Ionization of Excitons in an Electric Field in GaN.
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- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 63, doi. 10.1002/(SICI)1521-3951(199911)216:1<63::AID-PSSB63>3.0.CO;2-8
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Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review.
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- Semiconductors, 1999, v. 33, n. 3, p. 265, doi. 10.1134/1.1187676
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- Article