Found: 7
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Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements.
- Published in:
- Nano Research, 2022, v. 15, n. 2, p. 1524, doi. 10.1007/s12274-021-3697-0
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- Publication type:
- Article
Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method.
- Published in:
- Advanced Materials Interfaces, 2019, v. 6, n. 8, p. N.PAG, doi. 10.1002/admi.201801731
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- Publication type:
- Article
Paper Electronics: Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method (Adv. Mater. Interfaces 8/2019).
- Published in:
- Advanced Materials Interfaces, 2019, v. 6, n. 8, p. N.PAG, doi. 10.1002/admi.201970048
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- Publication type:
- Article
Reduced Contact Resistance with MoOx Injection Layer for Thin Film Transistors Based on Organic Semiconductors with Deep HOMO Level.
- Published in:
- SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1535, doi. 10.1002/sdtp.10993
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- Publication type:
- Article
P-81: Non-Quasi Static Measurement in Random Network Carbon Nanotube Thin-Film Transistors for Next-Generation Displays.
- Published in:
- SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 1456, doi. 10.1002/sdtp.10011
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- Publication type:
- Article
P-21: n-type Organic Thin Film Transistors with High Operational Stability.
- Published in:
- SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 1021, doi. 10.1002/j.2168-0159.2014.tb00265.x
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- Publication type:
- Article
P.64: WITHDRAWN: P.65: The Effect of Surface Polarity of Gate Dielectric Buffer Layer on Operational Stability in Organic Thin Film Transistors.
- Published in:
- 2013
- By:
- Publication type:
- Other