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Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate.
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- Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6340, doi. 10.1007/s11664-024-11318-z
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Characteristics of Multi‐Quantum‐Well Laser Diodes with Surface Electrode Structure Directly Bonded to InP Template on SiO<sub>2</sub>/Si Substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 10, p. 1, doi. 10.1002/pssa.202000767
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- Article
Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700357
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Numerical Analysis and Lasing Characteristics of GaInAsP Double-Heterostructure Lasers on InP/Si Substrate.
- Published in:
- Journal of Electronic Materials, 2022, v. 51, n. 9, p. 5110, doi. 10.1007/s11664-022-09737-x
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- Article
Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300677
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- Article