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UV Total Dose Nonvolatile Sensor Using Silicon-Oxide-Nitride-Oxide-Silicon Capacitor with Oxy-nitride as Charge-trapping Layer.
- Published in:
- Sensors & Materials, 2018, v. 30, n. 8, Part 2, p. 1831, doi. 10.18494/SAM.2018.1904
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- Article
Nonvolatile Total Ionization Dose Radiation Sensor Using Titanium Nitride-Aluminum Oxide-Silicon Nitride-Silicon Oxide-Silicon Devices for High Response and Good Data Retention.
- Published in:
- Sensors & Materials, 2017, v. 29, n. 7, Part 2, p. 969, doi. 10.18494/SAM.2017.1600
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- Article
Charge Retention Improvement of Nonvolatile Radiation Sensor Using Metal-Oxide-Nitride-Oxide-Silicon with Si-Rich Nitride and Oxy-Nitride as Stack Charge-Trapping Layer.
- Published in:
- Sensors & Materials, 2016, v. 28, n. 9, p. 1023, doi. 10.18494/sam.2016.1391
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- Article
Effect of Nitrogen Implantation on the Performance of TOHOS Total Ionizing Dose Radiation Sensor Device.
- Published in:
- Sensors & Materials, 2016, v. 28, n. 5, p. 577
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- Publication type:
- Article
Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS.
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- Sensors (14248220), 2016, v. 16, n. 4, p. 450, doi. 10.3390/s16040450
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- Article
Synthesis of ZnO nanowires by the hydrothermal method, using sol-gel prepared ZnO seed films.
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- Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 4, p. 339, doi. 10.1007/s10854-010-0139-2
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- Article
Efficiently Harvesting Sun Light for Silicon Solar Cells through Advanced Optical Couplers and A Radial p-n Junction Structure.
- Published in:
- Energies (19961073), 2010, v. 3, n. 4, p. 784, doi. 10.3390/en3040784
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- Article