Works by Shi, Dongxia

Results: 57

Changes in the structural properties and rate of hydrolysis of cotton fibers during extended enzymatic hydrolysis.

Published in:

Biotechnology & Bioengineering, 2006, v. 93, n. 3, p. 443, doi. 10.1002/bit.20730

By:

Wang, Lushan;
Zhang, Yuzhong;
Gao, Peiji;
Shi, Dongxia;
Liu, Hongwen;
Gao, Hongjun

Publication type:

Article

Isolated nanographene crystals for nano-floating gate in charge trapping memory.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep02126

By:

Rong Yang;
Chenxin Zhu;
Jianling Meng;
Zongliang Huo;
Meng Cheng;
Donghua Liu;
Wei Yang;
Dongxia Shi;
Ming Liu;
Guangyu Zhang

Publication type:

Article

Author Correction: Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene.

Published in:

2025

By:

Liu, Le;
Zhang, Shihao;
Chu, Yanbang;
Shen, Cheng;
Huang, Yuan;
Yuan, Yalong;
Tian, Jinpeng;
Tang, Jian;
Ji, Yiru;
Yang, Rong;
Watanabe, Kenji;
Taniguchi, Takashi;
Shi, Dongxia;
Liu, Jianpeng;
Yang, Wei;
Zhang, Guangyu

Publication type:

Correction Notice

Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-55333-4

By:

Li, Xiuzhen;
Qin, Biao;
Wang, Yaxian;
Xi, Yue;
Huang, Zhiheng;
Zhao, Mengze;
Peng, Yalin;
Chen, Zitao;
Pan, Zitian;
Zhu, Jundong;
Cui, Chenyang;
Yang, Rong;
Yang, Wei;
Meng, Sheng;
Shi, Dongxia;
Bai, Xuedong;
Liu, Can;
Li, Na;
Tang, Jianshi;
Liu, Kaihui

Publication type:

Article

Medium-scale flexible integrated circuits based on 2D semiconductors.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-55142-9

By:

Peng, Yalin;
Cui, Chenyang;
Li, Lu;
Wang, Yuchen;
Wang, Qinqin;
Tian, Jinpeng;
Huang, Zhiheng;
Huang, Biying;
Zhang, Yangkun;
Li, Xiuzhen;
Tang, Jian;
Chu, Yanbang;
Yang, Wei;
Shi, Dongxia;
Du, Luojun;
Li, Na;
Zhang, Guangyu

Publication type:

Article

A review of nanographene: growth and applications.

Published in:

Modern Physics Letters B, 2014, v. 28, n. 20, p. -1, doi. 10.1142/S0217984914300099

By:

Meng, Jianling;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

An Anisotropic Etching Effect in the Graphene Basal Plane.

Published in:

Advanced Materials, 2010, v. 22, n. 36, p. 4014, doi. 10.1002/adma.201000618

By:

Yang, Rong;
Zhang, Lianchang;
Wang, Yi;
Shi, Zhiwen;
Shi, Dongxia;
Gao, Hongjun;
Wang, Enge;
Zhang, Guangyu

Publication type:

Article

Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001).

Published in:

Advanced Materials, 2009, v. 21, n. 27, p. 2777, doi. 10.1002/adma.200800761

By:

Pan, Yi;
Zhang, Haigang;
Shi, Dongxia;
Sun, Jiatao;
Du, Shixuan;
Liu, Feng;
Gao, Hong-jun

Publication type:

Article

Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001).

Published in:

Advanced Materials, 2009, v. 21, n. 27, p. n/a, doi. 10.1002/adma.200990105

By:

Pan, Yi;
Zhang, Haigang;
Shi, Dongxia;
Sun, Jiatao;
Du, Shixuan;
Liu, Feng;
Gao, Hong-jun

Publication type:

Article

Hot-Pressed Two-Dimensional Amorphous Metals and Their Electronic Properties.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/cryst12050616

By:

Liu, Jieying;
Tang, Jian;
Zhao, Jiaojiao;
Zhao, Yanchong;
Shen, Cheng;
Liao, Mengzhou;
Wang, Shuopei;
Tian, Jinpeng;
Chu, Yanbang;
Li, Jiawei;
Wei, Zheng;
Long, Gen;
Yang, Wei;
Yang, Rong;
Li, Na;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2.

Published in:

Crystals (2073-4352), 2016, v. 6, n. 9, p. 115, doi. 10.3390/cryst6090115

By:

Luojun Du;
Hua Yu;
Li Xie;
Shuang Wu;
Shuopei Wang;
Xiaobo Lu;
Mengzhou Liao;
Jianling Meng;
Jing Zhao;
Jing Zhang;
Jianqi Zhu;
Peng Chen;
Guole Wang;
Rong Yang;
Dongxia Shi;
Guangyu Zhang

Publication type:

Article

Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30998-x

By:

Liu, Le;
Zhang, Shihao;
Chu, Yanbang;
Shen, Cheng;
Huang, Yuan;
Yuan, Yalong;
Tian, Jinpeng;
Tang, Jian;
Ji, Yiru;
Yang, Rong;
Watanabe, Kenji;
Taniguchi, Takashi;
Shi, Dongxia;
Liu, Jianpeng;
Yang, Wei;
Zhang, Guangyu

Publication type:

Article

Batch fabrication of MoS2 devices directly on growth substrates by step engineering.

Published in:

Nano Research, 2023, v. 16, n. 11, p. 12794, doi. 10.1007/s12274-023-6180-2

By:

Li, Lu;
Peng, Yalin;
Tian, Jinpeng;
Wu, Fanfan;
Guo, Xiang;
Li, Na;
Yang, Wei;
Shi, Dongxia;
Du, Luojun;
Zhang, Guangyu

Publication type:

Article

Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses.

Published in:

Nano Research, 2022, v. 15, n. 6, p. 5418, doi. 10.1007/s12274-022-4122-z

By:

Li, Na;
He, Congli;
Wang, Qinqin;
Tang, Jianshi;
Zhang, Qingtian;
Shen, Cheng;
Tang, Jian;
Huang, Heyi;
Wang, Shuopei;
Li, Jiawei;
Huang, Biying;
Wei, Zheng;
Guo, Yutuo;
Yuan, Jiahao;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Bandgap broadening at grain boundaries in single-layer MoS2.

Published in:

Nano Research, 2018, v. 11, n. 11, p. 6102, doi. 10.1007/s12274-018-2128-3

By:

Wang, Dongfei;
Yu, Hua;
Tao, Lei;
Xiao, Wende;
Fan, Peng;
Zhang, Tingting;
Liao, Mengzhou;
Guo, Wei;
Shi, Dongxia;
Du, Shixuan;
Zhang, Guangyu;
Gao, Hongjun

Publication type:

Article

Fabrication of high-quality all-graphene devices with low contact resistances.

Published in:

Nano Research, 2014, v. 7, n. 10, p. 1449, doi. 10.1007/s12274-014-0504-1

By:

Yang, Rong;
Wu, Shuang;
Wang, Duoming;
Xie, Guibai;
Cheng, Meng;
Wang, Guole;
Yang, Wei;
Chen, Peng;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Vapour-phase graphene epitaxy at low temperatures.

Published in:

Nano Research, 2012, v. 5, n. 4, p. 258, doi. 10.1007/s12274-012-0205-6

By:

Zhang, Lianchang;
Shi, Zhiwen;
Liu, Donghua;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Studies of graphene-based nanoelectromechanical switches.

Published in:

Nano Research, 2012, v. 5, n. 2, p. 82, doi. 10.1007/s12274-011-0187-9

By:

Shi, Zhiwen;
Lu, Hongliang;
Zhang, Lianchang;
Yang, Rong;
Wang, Yi;
Liu, Donghua;
Guo, Haiming;
Shi, Dongxia;
Gao, Hongjun;
Wang, Enge;
Zhang, Guangyu

Publication type:

Article

Catalyst-free growth of nanographene films on various substrates.

Published in:

Nano Research, 2011, v. 4, n. 3, p. 315, doi. 10.1007/s12274-010-0086-5

By:

Zhang, Lianchang;
Shi, Zhiwen;
Wang, Yi;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Precisely Aligned Monolayer MoS2 Epitaxially Grown on h-BN basal Plane.

Published in:

Small, 2017, v. 13, n. 7, p. n/a, doi. 10.1002/smll.201603005

By:

Yu, Hua;
Yang, Zhengzhong;
Du, Luojun;
Zhang, Jing;
Shi, Jinan;
Chen, Wei;
Chen, Peng;
Liao, Mengzhou;
Zhao, Jing;
Meng, Jianling;
Wang, Guole;
Zhu, Jianqi;
Yang, Rong;
Shi, Dongxia;
Gu, Lin;
Zhang, Guangyu

Publication type:

Article

Rolling Up a Monolayer MoS2 Sheet.

Published in:

Small, 2016, v. 12, n. 28, p. 3770, doi. 10.1002/smll.201601413

By:

Meng, Jianling;
Wang, Guole;
Li, Xiaomin;
Lu, Xiaobo;
Zhang, Jing;
Yu, Hua;
Chen, Wei;
Du, Luojun;
Liao, Mengzhou;
Zhao, Jing;
Chen, Peng;
Zhu, Jianqi;
Bai, Xuedong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

A General Route Towards Defect and Pore Engineering in Graphene.

Published in:

Small, 2014, v. 10, n. 11, p. 2280, doi. 10.1002/smll.201303671

By:

Xie, Guibai;
Yang, Rong;
Chen, Peng;
Zhang, Jing;
Tian, Xuezeng;
Wu, Shuang;
Zhao, Jing;
Cheng, Meng;
Yang, Wei;
Wang, Duoming;
He, Congli;
Bai, Xuedong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Lattice Dynamics, Phonon Chirality, and Spin–Phonon Coupling in 2D Itinerant Ferromagnet Fe3GeTe2.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 48, p. N.PAG, doi. 10.1002/adfm.201904734

By:

Du, Luojun;
Tang, Jian;
Zhao, Yanchong;
Li, Xiaomei;
Yang, Rong;
Hu, Xuerong;
Bai, Xueyin;
Wang, Xiao;
Watanabe, Kenji;
Taniguchi, Takashi;
Shi, Dongxia;
Yu, Guoqiang;
Bai, Xuedong;
Hasan, Tawfique;
Zhang, Guangyu;
Sun, Zhipei

Publication type:

Article

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2.

Published in:

Small Science, 2022, v. 2, n. 11, p. 1, doi. 10.1002/smsc.202200062

By:

Li, Jiawei;
Wang, Shuopei;
Li, Lu;
Wei, Zheng;
Wang, Qinqin;
Sun, Huacong;
Tian, Jinpeng;
Guo, Yutuo;
Liu, Jieying;
Yu, Hua;
Li, Na;
Long, Gen;
Bai, Xuedong;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition (Adv. Mater. Interfaces 32/2022).

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 32, p. 1, doi. 10.1002/admi.202270176

By:

Huang, Biying;
Li, Na;
Wang, Qinqin;
Ouyang, Chen;
He, Congli;
Zhang, Lianchang;
Du, Luojun;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Optoelectronic Synapses Based on MoS2 Transistors for Accurate Image Recognition.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 32, p. 1, doi. 10.1002/admi.202201558

By:

Huang, Biying;
Li, Na;
Wang, Qinqin;
Ouyang, Chen;
He, Congli;
Zhang, Lianchang;
Du, Luojun;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Atomic Layer Deposition: Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics (Adv. Mater. Interfaces 10/2019).

Published in:

Advanced Materials Interfaces, 2019, v. 6, n. 10, p. N.PAG, doi. 10.1002/admi.201802055

By:

Li, Na;
Wei, Zheng;
Zhao, Jing;
Wang, Qinqin;
Shen, Cheng;
Wang, Shuopei;
Tang, Jian;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Atomic Layer Deposition of Al2O3 Directly on 2D Materials for High‐Performance Electronics.

Published in:

Advanced Materials Interfaces, 2019, v. 6, n. 10, p. N.PAG, doi. 10.1002/admi.201802055

By:

Li, Na;
Wei, Zheng;
Zhao, Jing;
Wang, Qinqin;
Shen, Cheng;
Wang, Shuopei;
Tang, Jian;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Observation of phonon Stark effect.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-48992-w

By:

Huang, Zhiheng;
Bai, Yunfei;
Zhao, Yanchong;
Liu, Le;
Zhao, Xuan;
Wu, Jiangbin;
Watanabe, Kenji;
Taniguchi, Takashi;
Yang, Wei;
Shi, Dongxia;
Xu, Yang;
Zhang, Tiantian;
Zhang, Qingming;
Tan, Ping-Heng;
Sun, Zhipei;
Meng, Sheng;
Wang, Yaxian;
Du, Luojun;
Zhang, Guangyu

Publication type:

Article

Electron/infrared-phonon coupling in ABC trilayer graphene.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-46129-7

By:

Xiaozhou Zan;
Xiangdong Guo;
Aolin Deng;
Zhiheng Huang;
Le Liu;
Fanfan Wu;
Yalong Yuan;
Jiaojiao Zhao;
Yalin Peng;
Lu Li;
Yangkun Zhang;
Xiuzhen Li;
Jundong Zhu;
Jingwei Dong;
Dongxia Shi;
Wei Yang;
Xiaoxia Yang;
Zhiwen Shi;
Luojun Du;
Qing Dai

Publication type:

Article

Growth, Characterization, and Properties of Nanographene.

Published in:

Small, 2012, v. 8, n. 9, p. 1429, doi. 10.1002/smll.201101827

By:

Yang, Wei;
He, Congli;
Zhang, Lianchang;
Wang, Yi;
Shi, Zhiwen;
Cheng, Meng;
Xie, Guibai;
Wang, Duoming;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Surfaces: Identifying Multiple Configurations of Complex Molecules on Metal Surfaces (Small 6/2012).

Published in:

Small, 2012, v. 8, n. 6, p. 795, doi. 10.1002/smll.201290036

By:

Liu, Qi;
Du, Shixuan;
Zhang, Yuyang;
Jiang, Nan;
Shi, Dongxia;
Gao, Hong-Jun

Publication type:

Article

Identifying Multiple Configurations of Complex Molecules on Metal Surfaces.

Published in:

Small, 2012, v. 8, n. 6, p. 796, doi. 10.1002/smll.201101937

By:

Liu, Qi;
Du, Shixuan;
Zhang, Yuyang;
Jiang, Nan;
Shi, Dongxia;
Gao, Hong-Jun

Publication type:

Article

Molecular Cloisonné: Multicomponent Organic Alternating Nanostructures at Vicinal Surfaces with Tunable Length Scales.

Published in:

Small, 2012, v. 8, n. 4, p. 535, doi. 10.1002/smll.201100822

By:

Zhong, Dingyong;
Chi, Lifeng;
Guo, Haiming;
Shi, Dongxia;
Fuchs, Harald

Publication type:

Article

Epitaxial growth of single-domain graphene on hexagonal boron nitride.

Published in:

Nature Materials, 2013, v. 12, n. 9, p. 792, doi. 10.1038/nmat3695

By:

Yang, Wei;
Chen, Guorui;
Shi, Zhiwen;
Liu, Cheng-Cheng;
Zhang, Lianchang;
Xie, Guibai;
Cheng, Meng;
Wang, Duoming;
Yang, Rong;
Shi, Dongxia;
Watanabe, Kenji;
Taniguchi, Takashi;
Yao, Yugui;
Zhang, Yuanbo;
Zhang, Guangyu

Publication type:

Article

Graphene-Contacted Ultrashort Channel Monolayer MoS2 Transistors.

Published in:

Advanced Materials, 2017, v. 29, n. 37, p. n/a, doi. 10.1002/adma.201702522

By:

Xie, Li;
Liao, Mengzhou;
Wang, Shuopei;
Yu, Hua;
Du, Luojun;
Tang, Jian;
Zhao, Jing;
Zhang, Jing;
Chen, Peng;
Lu, Xiaobo;
Wang, Guole;
Xie, Guibai;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation.

Published in:

Advanced Materials, 2017, v. 29, n. 34, p. n/a, doi. 10.1002/adma.201702076

By:

Zhao, Jing;
Li, Na;
Yu, Hua;
Wei, Zheng;
Liao, Mengzhou;
Chen, Peng;
Wang, Shuopei;
Shi, Dongxia;
Sun, Qijun;
Zhang, Guangyu

Publication type:

Article

Twist angle-dependent conductivities across MoS2/graphene heterojunctions.

Published in:

Nature Communications, 2018, v. 9, n. 1, p. 1, doi. 10.1038/s41467-018-06555-w

By:

Liao, Mengzhou;
Wu, Ze-Wen;
Du, Luojun;
Zhang, Tingting;
Wei, Zheng;
Zhu, Jianqi;
Yu, Hua;
Tang, Jian;
Gu, Lin;
Xing, Yanxia;
Yang, Rong;
Shi, Dongxia;
Yao, Yugui;
Zhang, Guangyu

Publication type:

Article

In Situ Encapsulation of Atomically Precise Nanoclusters in Reticular Frameworks via Mechanochemical Synthesis.

Published in:

Advanced Materials, 2025, v. 37, n. 1, p. 1, doi. 10.1002/adma.202412768

By:

Li, Yi‐Ming;
Shi, Dongxia;
Yuan, Jian;
Zuo, Rui‐Min;
Yang, Hui;
Hu, Jinhui;
Hu, Shu‐Xian;
Sheng, Hongting;
Zhu, Manzhou

Publication type:

Article

Homo‐Site Nucleation Growth of Twisted Bilayer MoS2 with Commensurate Angles.

Published in:

Advanced Materials, 2024, v. 36, n. 38, p. 1, doi. 10.1002/adma.202408227

By:

Zhou, Jun;
Huang, Haojie;
Zhao, Zihan;
Dou, Zhenglong;
Zhou, Li;
Zhang, Tiantian;
Huang, Zhiheng;
Feng, Yibiao;
Shi, Dongxia;
Liu, Nan;
Yang, Jian;
Nie, J.C.;
Wang, Ququan;
Dong, Jichen;
Liu, Yunqi;
Dou, Ruifen;
Xue, Qikun

Publication type:

Article

Retraction: Highly Sensitive MoS2 Humidity Sensors Array for Noncontact Sensation.

Published in:

Advanced Materials, 2023, v. 35, n. 23, p. 1, doi. 10.1002/adma.202302631

By:

Zhao, Jing;
Li, Na;
Yu, Hua;
Wei, Zheng;
Liao, Mengzhou;
Chen, Peng;
Wang, Shuopei;
Shi, Dongxia;
Sun, Qijun;
Zhang, Guangyu

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202270047

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200238

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

2D Transistors: Vertical Integration of 2D Building Blocks for All‐2D Electronics (Adv. Electron. Mater. 12/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202070048

By:

Tang, Jian;
Wang, Qinqin;
Wei, Zheng;
Shen, Cheng;
Lu, Xiaobo;
Wang, Shuopei;
Zhao, Yanchong;
Liu, Jieying;
Li, Na;
Chu, Yanbang;
Tian, Jinpeng;
Wu, Fanfan;
Yang, Wei;
He, Congli;
Yang, Rong;
Shi, Dongxia;
Watanabe, Kenji;
Taniguchi, Takashi;
Zhang, Guangyu

Publication type:

Article

Vertical Integration of 2D Building Blocks for All‐2D Electronics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000550

By:

Tang, Jian;
Wang, Qinqin;
Wei, Zheng;
Shen, Cheng;
Lu, Xiaobo;
Wang, Shuopei;
Zhao, Yanchong;
Liu, Jieying;
Li, Na;
Chu, Yanbang;
Tian, Jinpeng;
Wu, Fanfan;
Yang, Wei;
He, Congli;
Yang, Rong;
Shi, Dongxia;
Watanabe, Kenji;
Taniguchi, Takashi;
Zhang, Guangyu

Publication type:

Article

Nonvolatile Memory: New Floating Gate Memory with Excellent Retention Characteristics (Adv. Electron. Mater. 4/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201970018

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

New Floating Gate Memory with Excellent Retention Characteristics.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800726

By:

Wang, Shuopei;
He, Congli;
Tang, Jian;
Lu, Xiaobo;
Shen, Cheng;
Yu, Hua;
Du, Luojun;
Li, Jiafang;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Precise control of the interlayer twist angle in large scale MoS2 homostructures.

Published in:

Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-16056-4

By:

Liao, Mengzhou;
Wei, Zheng;
Du, Luojun;
Wang, Qinqin;
Tang, Jian;
Yu, Hua;
Wu, Fanfan;
Zhao, Jiaojiao;
Xu, Xiaozhi;
Han, Bo;
Liu, Kaihui;
Gao, Peng;
Polcar, Tomas;
Sun, Zhipei;
Shi, Dongxia;
Yang, Rong;
Zhang, Guangyu

Publication type:

Article

Gate‐Last MoS2 Transistors for Active‐Matrix Display Driving Circuits.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 42, p. 1, doi. 10.1002/adfm.202304879

By:

Peng, Yalin;
Li, Lu;
Huang, Biying;
Tian, Jinpeng;
Li, Xiuzhen;
Tang, Jian;
Chu, Yanbang;
Shi, Dongxia;
Du, Luojun;
Li, Na;
Zhang, Guangyu

Publication type:

Article

Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures.

Published in:

Advanced Materials, 2016, v. 28, n. 10, p. 1950, doi. 10.1002/adma.201504631

By:

Zhang, Jing;
Wang, Jinhuan;
Chen, Peng;
Sun, Yue;
Wu, Shuang;
Jia, Zhiyan;
Lu, Xiaobo;
Yu, Hua;
Chen, Wei;
Zhu, Jianqi;
Xie, Guibai;
Yang, Rong;
Shi, Dongxia;
Xu, Xiulai;
Xiang, Jianyong;
Liu, Kaihui;
Zhang, Guangyu

Publication type:

Article